Untitled
Abstract: No abstract text available
Text: FGA50N100BNTD2 1000 V NPT Trench IGBT Features General Description • • • • • Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and
|
Original
|
PDF
|
FGA50N100BNTD2
|
Untitled
Abstract: No abstract text available
Text: FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features General Description • High Speed Switching Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and
|
Original
|
PDF
|
FGL60N100BNTD
O-264
|
Untitled
Abstract: No abstract text available
Text: FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features General Description • High Speed Switching Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and
|
Original
|
PDF
|
FGL60N100BNTD
O-264
|
Untitled
Abstract: No abstract text available
Text: FGA50N100BNTD 1000 V NPT Trench IGBT General Description Features Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers
|
Original
|
PDF
|
FGA50N100BNTD
|
FGA50N100BNTD2
Abstract: IGBT welder circuit
Text: FGA50N100BNTD2 1000 V NPT Trench IGBT Features General Description • • • • • Using Fairchild 's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and
|
Original
|
PDF
|
FGA50N100BNTD2
FGA50N100BNTD2
IGBT welder circuit
|
RG 2006 10A 600V
Abstract: ups active power easy 600 igbt 1000v 10A FGA50N100BN
Text: FGA50N100BNTD 1000 V NPT Trench IGBT General Description Features Using Fairchild 's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers
|
Original
|
PDF
|
FGA50N100BNTD
FGA50N100BNTD
RG 2006 10A 600V
ups active power easy 600
igbt 1000v 10A
FGA50N100BN
|
Untitled
Abstract: No abstract text available
Text: FGA50N100BNT tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche
|
Original
|
PDF
|
FGA50N100BNT
|
induction heater
Abstract: FGA50N100BNT FGA50N100BNTTU fairchild induction heater low frequency induction heater igbt 1000v 10A 30 kw induction heater
Text: FGA50N100BNT tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche
|
Original
|
PDF
|
FGA50N100BNT
100oC
induction heater
FGA50N100BNT
FGA50N100BNTTU
fairchild induction heater
low frequency induction heater
igbt 1000v 10A
30 kw induction heater
|
igbt 1000v 10A
Abstract: No abstract text available
Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche
|
Original
|
PDF
|
FGA50N100BNTD2
FGA50N100BNTD2
igbt 1000v 10A
|
igbt induction cooker
Abstract: induction heating cooker FGA50N100BNTD2 induction cooker circuit with IGBT induction cooker application notes induction cooker fairchild induction cooker fairchild induction heater induction cooker component induction heater
Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche
|
Original
|
PDF
|
FGA50N100BNTD2
FGA50N100BNTD2
igbt induction cooker
induction heating cooker
induction cooker circuit with IGBT
induction cooker application notes
induction cooker
fairchild induction cooker
fairchild induction heater
induction cooker component
induction heater
|
igbt induction cooker
Abstract: FGA50N100 "induction cooker" circuit induction cooker circuit with IGBT induction heating cooker IC for induction cooker FGA50N100BNTDTU IGBT 600V 30A TO-3P IGBT 1000V 60A BNTD
Text: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for
|
Original
|
PDF
|
FGA50N100BNTD
FGA50N100BNTD
FGA50N100BNTDTU
igbt induction cooker
FGA50N100
"induction cooker" circuit
induction cooker circuit with IGBT
induction heating cooker
IC for induction cooker
IGBT 600V 30A TO-3P
IGBT 1000V 60A
BNTD
|
igbt induction cooker
Abstract: induction cooker igbt 1000v 30a induction cooker circuit with IGBT IGBT 1000V .50A induction heating cooker fairchild induction cooker igbt for induction cooker FGA50N100BNTDTU IGBT 60A
Text: tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for
|
Original
|
PDF
|
FGA50N100BNTD
igbt induction cooker
induction cooker
igbt 1000v 30a
induction cooker circuit with IGBT
IGBT 1000V .50A
induction heating cooker
fairchild induction cooker
igbt for induction cooker
FGA50N100BNTDTU
IGBT 60A
|
fairchild induction cooker
Abstract: induction cooker circuit with IGBT igbt induction cooker FGA50N100BNTD FGA50N100BNTDTU igbt 1000v 30a induction cooker IC for induction cooker FGA50N100BN
Text: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for
|
Original
|
PDF
|
FGA50N100BNTD
FGA50N100BNTD
fairchild induction cooker
induction cooker circuit with IGBT
igbt induction cooker
FGA50N100BNTDTU
igbt 1000v 30a
induction cooker
IC for induction cooker
FGA50N100BN
|
tb 120
Abstract: RURH30100CC URH30100C *h30100
Text: RURH30100CC Data Sheet January 2000 File Number 2932.3 30A, 1000V Ultrafast Dual Diode Features The RURH30100CC is an ultrafast dual diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.
|
Original
|
PDF
|
RURH30100CC
RURH30100CC
110ns)
110ns
tb 120
URH30100C
*h30100
|
|
|
RURG30100
Abstract: TA09904
Text: RURG30100 Data Sheet January 2000 File Number 3213.2 30A, 1000V Ultrafast Diode Features The RURG30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
|
Original
|
PDF
|
RURG30100
RURG30100
110ns)
110ns
TA09904
|
RHR30100C
Abstract: RHR30100 RHRG30100CC
Text: RHRG30100CC Data Sheet January 2000 File Number 3942.2 30A, 1000V Hyperfast Dual Diode Features The RHRG30100CC is a hyperfast dual diode with soft recovery characteristics trr < 65ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated
|
Original
|
PDF
|
RHRG30100CC
RHRG30100CC
RHR30100C
RHR30100
|
RHRG30100
Abstract: No abstract text available
Text: RHRG30100 Data Sheet January 2000 File Number 3941.2 30A, 1000V Hyperfast Diode Features The RHRG30100 is a hyperfast diode with soft recovery characteristics trr < 65ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated
|
Original
|
PDF
|
RHRG30100
RHRG30100
|
RHR30100
Abstract: rhr30100 diode datasheet "ultrafast diodes" igbt 1000v 30a RHRP30100
Text: RHRP30100 Data Sheet January 2000 File Number 3940.2 30A, 1000V Hyperfast Diode Features The RHRP30100 is a hyperfast diode with soft recovery characteristics trr < 65ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated
|
Original
|
PDF
|
RHRP30100
RHRP30100
RHR30100
rhr30100 diode datasheet
"ultrafast diodes"
igbt 1000v 30a
|
CM75DY-34A
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM75DY-34A HIGH POWER SWITCHING USE CM75DY-34A ¡IC . 75A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack
|
Original
|
PDF
|
CM75DY-34A
CM75DY-34A
|
CM75DY-34A
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM75DY-34A HIGH POWER SWITCHING USE CM75DY-34A ¡IC . 75A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack
|
Original
|
PDF
|
CM75DY-34A
16K/W
CM75DY-34A
|
RURH30100CC
Abstract: URH30100C
Text: RURH30100CC Data Sheet January 2002 30A, 1000V Ultrafast Dual Diode Features The RURH30100CC is an ultrafast dual diode with soft recovery characteristics trr < 110ns . It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.
|
Original
|
PDF
|
RURH30100CC
RURH30100CC
110ns)
110ns
175oC
URH30100C
|
RUR30100
Abstract: rur30100 Diode RURP30100
Text: RURP30100 Data Sheet January 2002 30A, 1000V Ultrafast Diode Features The RURP30100 is an ultrafast diode with soft recovery characteristics trr < 110ns . It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted, epitaxial construction.
|
Original
|
PDF
|
RURP30100
RURP30100
110ns)
110ns
175oC
RUR30100
rur30100 Diode
|
VQE 22
Abstract: transistor 2146 LE17 SML30G100BN
Text: _ SENELAB PLC bOE ]> • 0133187 □□OObflO TTfl ■ S M L B = rr= MOS POWER “ lili” IGBT SEME LAB AT /// SML30G100BN 1000V 4 30A N -CH A N NEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Parameter SML30G100BN
|
OCR Scan
|
PDF
|
T-39-M
SML30G100BN
MIL-STD-750
O-247AD
VQE 22
transistor 2146
LE17
|
Untitled
Abstract: No abstract text available
Text: A D VA NC ED PO»ER TECHNOLOGY U E « - 0 8 ST101 QD 0 0 8 U 2 77S -A V P ADVANCED PO W ER TECHNOLOGY* APT30GL100BN 1000V 30A POWER MOS tV IGBT N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATMGS Symbol All Ratings: Tc = 25°C unless otherwise specified.
|
OCR Scan
|
PDF
|
ST101
APT30GL100BN
|
