IGBT 1000V 80A Search Results

Contextual Info: FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features General Description • High Speed Switching Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and

Contextual Info: FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features General Description • High Speed Switching Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and

Contextual Info: FGA50N100BNTD 1000 V NPT Trench IGBT General Description Features Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers

RG 2006 10A 600V

Abstract: ups active power easy 600 igbt 1000v 10A FGA50N100BN
Contextual Info: FGA50N100BNTD 1000 V NPT Trench IGBT General Description Features Using Fairchild 's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers

Contextual Info: FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features General Description • High current capability Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for hard switching application such as UPS, welder,

FGH40T100SMD

Abstract: fgh40t100 W10K AC welder IGBT circuit IGBT 1000V .200A igbt 1000v 80a DBVCE
Contextual Info: FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features General Description • High current capability Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for hard switching application such as UPS, welder,

igbt induction cooker

Abstract: FGA50N100 "induction cooker" circuit induction cooker circuit with IGBT induction heating cooker IC for induction cooker FGA50N100BNTDTU IGBT 600V 30A TO-3P IGBT 1000V 60A BNTD
Contextual Info: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for

igbt induction cooker

Abstract: induction cooker igbt 1000v 30a induction cooker circuit with IGBT IGBT 1000V .50A induction heating cooker fairchild induction cooker igbt for induction cooker FGA50N100BNTDTU IGBT 60A
Contextual Info: tm FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for

fairchild induction cooker

Abstract: induction cooker circuit with IGBT igbt induction cooker FGA50N100BNTD FGA50N100BNTDTU igbt 1000v 30a induction cooker IC for induction cooker FGA50N100BN
Contextual Info: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for

RURG80100

Contextual Info: RURG80100 Data Sheet January 2000 File Number 3371.3 80A, 1000V Ultrafast Diode Features The RURG80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RURU80100

Contextual Info: RURU80100 Data Sheet January 2000 File Number 3375.3 80A, 1000V Ultrafast Diode Features The RURU80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

CM200DY-34A

Abstract: CM-200 IGBT 1000V .200A application note
Contextual Info: MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE CM200DY-34A ¡IC . 200A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack

cm200dy-34a

Abstract: IGBT 1000V .200A
Contextual Info: MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE CM200DY-34A ¡IC . 200A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack

RURG80100

Contextual Info: RURG80100 Data Sheet January 2002 80A, 1000V Ultrafast Diode Features The RURG80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RURU80100

Contextual Info: RURU80100 Data Sheet January 2002 80A, 1000V Ultrafast Diode Features The RURU80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: RURG80100 Data Sheet January 2002 80A, 1000V Ultrafast Diode Features The RURG80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RURG80100

Contextual Info: RURG80100 Data Sheet January 2000 File Number 3371.3 80A, 1000V Ultrafast Diode Features Title UR 010 The RURG80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

CM200DU-34KA

Contextual Info: MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE CM200DU-34KA ● IC . 200A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack

Contextual Info: MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM200DU-34KA ● IC . 200A ● VCES . 1700V

CM200DU-34KA

Contextual Info: MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE CM200DU-34KA ● IC . 200A ● VCES . 1700V ● Insulated Type ● 2-elements in a pack

Contextual Info: MITSUBISHI IGBT MODULES CM200DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM200DU-34KA ● IC . 200A ● VCES . 1700V

Contextual Info: CM200DY-34A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD A-Series Module 200 Amperes/1700 Volts A F F W X G2 B G E2 E N L (4 PLACES) H E1 C2E1 E2 C1 K K K G G1 P P Q Description: Powerex IGBTMOD™ Modules

CM200DY-34A

Contextual Info: CM200DY-34A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Dual IGBTMOD A-Series Module 200 Amperes/1700 Volts A F F W X G2 B G E2 E N L (4 PLACES) H E1 C2E1 E2 C1 K K K G G1 P P Q Description: Powerex IGBTMOD™ Modules

cm200dy-34a

Contextual Info: CM200DY-34A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Dual IGBTMOD A-Series Module 200 Amperes/1700 Volts A F F W X G2 B G E2 E N L (4 PLACES) H E1 C2E1 E2 C1 K K K G G1 P P Q Description: Powerex IGBTMOD™ Modules