igbt 300V 10A datasheet
Abstract: FGPF30N30TTU
Text: FGPF30N30T tm 300V, 30A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGPF30N30T
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FGPF30N30T
igbt 300V 10A datasheet
FGPF30N30TTU
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Untitled
Abstract: No abstract text available
Text: FGPF50N30T tm 300V, 50A PDP IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.4V @ IC = 30A • High input impedance Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGPF50N30T
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FGPF50N30T
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FGFP30N45TTU
Abstract: FGPF30N45T igbt 200v 30a FGPF30N45
Text: FGPF30N45T tm 450V, 30A PDP Trench IGBT Features General Description • High Current Capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGPF30N45T
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FGPF30N45T
FGFP30N45TTU
igbt 200v 30a
FGPF30N45
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igbt 300V 30A
Abstract: igbt 300V 10A datasheet FGPF30N30TD igbt 200v 20a
Text: FGPF30N30TD tm 300V, 30A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGPF30N30TD
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FGPF30N30TD
igbt 300V 30A
igbt 300V 10A datasheet
igbt 200v 20a
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Untitled
Abstract: No abstract text available
Text: FGPF30N45T tm 450V, 30A PDP Trench IGBT Features General Description • High Current Capability • Low saturation voltage: VCE sat =1.55V @ IC = 30A • High input impedance Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGPF30N45T
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FGPF30N45T
Abstract: FGPF30N45TTU GENERAL SEMICONDUCTOR MARKING UJ
Text: FGPF30N45T tm 450V, 30A PDP Trench IGBT Features General Description • High Current Capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGPF30N45T
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FGPF30N45T
FGPF30N45TTU
GENERAL SEMICONDUCTOR MARKING UJ
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SGH30N60RUFD
Abstract: No abstract text available
Text: CO-PAK IGBT SGH30N60RUFD FEATURES TO-3P * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) C APPLICATIONS * AC & DC Motor controls
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SGH30N60RUFD
25duct
SGH30N60RUFD
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SGF30N60RUFD
Abstract: No abstract text available
Text: CO-PAK IGBT SGF30N60RUFD FEATURES TO-3PF * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) C APPLICATIONS * AC & DC Motor controls
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SGF30N60RUFD
SGF30N60RUFD
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Untitled
Abstract: No abstract text available
Text: CO-PAK IGBT SGL30N60RUFD FEATURES TO-264 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ Ic=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls
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SGL30N60RUFD
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SGL30N60RUFD
Abstract: No abstract text available
Text: CO-PAK IGBT SGL30N60RUFD FEATURES TO-264 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ Ic=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls
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SGL30N60RUFD
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SGL30N60RUFD
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Untitled
Abstract: No abstract text available
Text: CO-PAK IGBT SGF30N60RUFD FEATURES TO-3PF * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) C APPLICATIONS * AC & DC Motor controls
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SGF30N60RUFD
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FGPF30N30
Abstract: No abstract text available
Text: FGPF30N30 300V, 30A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30 offers the optimum solution for PDP applications where low-condution
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FGPF30N30
FGPF30N30
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C1220A
Abstract: igbt 300V 10A datasheet FGPF30N30
Text: FGPF30N30 300V, 30A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30 offers the optimum solution for PDP applications where low-condution
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FGPF30N30
FGPF30N30
O-220F
100oC
C1220A
igbt 300V 10A datasheet
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TA09645
Abstract: RURG3020
Text: RURG3020 Data Sheet January 2000 File Number 3277.3 30A, 200V Ultrafast Diode Features The RURG3020 is an ultrafast diode with soft recovery characteristics trr < 45ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURG3020
RURG3020
TA09645
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RURP3020
Abstract: TA09645
Text: RURP3020 Data Sheet January 2000 File Number 2777.5 30A, 200V Ultrafast Diode Features The RURP3020 is an ultrafast diode trr < 45ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted,
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RURP3020
RURP3020
TA09645
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DSA0039858
Abstract: BAZ-3882-NCAZ RURH3020CC TA09645
Text: RURH3020CC Data Sheet January 2000 File Number 2773.4 30A, 200V Ultrafast Dual Diode Features The RURH3020CC is an ultrafast dual diode trr < 45ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated,
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RURH3020CC
RURH3020CC
DSA0039858
BAZ-3882-NCAZ
TA09645
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rurg3020c
Abstract: ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES RURG3020CC TA09645
Text: RURG3020CC Data Sheet January 2000 File Number 3552.3 30A, 200V Ultrafast Dual Diode Features The RURG3020CC is an ultrafast dual diode with soft recovery characteristics trr < 45ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG3020CC
RURG3020CC
rurg3020c
ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES
TA09645
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tc122 25
Abstract: 1MBH75D-060S 1MBH65D-090A TC1278 1MBH50D060 TO-3PL 1MB15D-060 1MBH60D 1MBC05-060 1MBC10-060
Text: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 600Vクラス 産業用モールドタイプ 600 volts class molded package types 形 式 Device type IGBT VCES VGES 1MBG05D-060 1MBC05-060 1MBC05D-060
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1MBG05D-060
1MBC05-060
1MBC05D-060
1MBH05D-060
1MBG10D-060
1MBC10-060
1MBC10D-060
1MBH10D-060
1MBC15-060
1MB15D-060
tc122 25
1MBH75D-060S
1MBH65D-090A
TC1278
1MBH50D060
TO-3PL
1MB15D-060
1MBH60D
1MBC05-060
1MBC10-060
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igbt 200v 20a
Abstract: tc122 25 1MBH65D-090A igbt 200V 5A TC122 1MBH60D-090A TC122-25 1mbh ERW03-060 ERW04-060
Text: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 電子レンジ用モールドタイプ Molded package types, such as microwave ovens 形 式 Device type 1MBH60D-090A 1MBH65D-090A VCES VGES Volts 900 900
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1MBH60D-090A
1MBH65D-090A
ERW01-060
ERW02-060
ERW03-060
ERW04-060
ERW05-060
ERW06-060
ERW07-120
O-220AB
igbt 200v 20a
tc122 25
1MBH65D-090A
igbt 200V 5A
TC122
1MBH60D-090A
TC122-25
1mbh
ERW03-060
ERW04-060
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diode mur
Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
Text: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.
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GE1001,
GE1002,
GE1003,
GE1004
GE1101,
GE1102,
GE1103,
GE1104
GE1301,
GE1302,
diode mur
600V 25A Ultrafast Diode
MUR850 diode
diode 400V 4A
igbt 1000v 80a
diode 400v 2A ultrafast
igbt 200v 30a
600v 30a IGBT
30A, 600v DIODE
igbt 200V 4A
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Untitled
Abstract: No abstract text available
Text: SGH30N60RUFD CO-PAK IGBT FEATURES * Short Circuit rated 10|is @ Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ lc=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) APPLICATIONS * * * * * AC & DC Motor controls
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SGH30N60RUFD
220to
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Untitled
Abstract: No abstract text available
Text: Preliminary SGH30N60RU FD FEATURES CO-PAK IGBT TO-3P * Short Circuit rated 10uS @ Tc=100”C * High Speed Switching * Low Saturation Volatge : V CE sat = 2.0 V @ lc=30A * High Input Impedance * CO-PAK, IGBT with FRD :T rr = 50nS (Typ) APPLICATIONS * AC & DC Motor controls
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SGH30N60RU
100ollector
SGH30N60RUFD
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Untitled
Abstract: No abstract text available
Text: CO-PAK IGBT SGL30N60RUFD FEATURES TO-264 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ lc=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) APPLICATIONS * * * * * AC & DC Motor controls
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SGL30N60RUFD
O-264
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Untitled
Abstract: No abstract text available
Text: SGF30N60RUFD FEATURES CO-PAK IGBT TO-3PF * Short Circuit rated 10|is @ Tc=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) 1 APPLICATIONS / * * * * * AC & DC Motor controls
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SGF30N60RUFD
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