IGBT 300V 200A Search Results

IXGN400N30A3

Abstract: Aluminium nitride
Contextual Info: IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching VCES = 300V IC25 = 400A VCE sat ≤ 1.15V E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGN400N60A3

Abstract: 400N30A3 IXGN400N30A3
Contextual Info: IXGN400N30A3 GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V Ultra Low Vsat PT IGBT for up to 10kHz switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

FGA90N30D

Contextual Info: FGA90N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential.

igbt 300v data sheet

Abstract: igbt 300V 10A datasheet FGA120N30D
Contextual Info: FGA120N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching loss. FGA120N30D offers the optimum solution for PDP applications where low condution loss is essential.

Contextual Info: FGA180N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.

Contextual Info: FGA180N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.

fga120n30d

Contextual Info: FGA120N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching loss. FGA120N30D offers the optimum solution for PDP applications where low condution loss is essential.

Contextual Info: FGA90N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential.

igbt 300V 10A datasheet

Abstract: FGA180N30D IGBT 40A
Contextual Info: FGA180N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.

FGA120N30D

Contextual Info: FGA120N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching loss. FGA120N30D offers the optimum solution for PDP applications where low condution loss is essential.

igbt 300V 10A datasheet

Abstract: c3228 FGA180N30D
Contextual Info: FGA180N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.

igbt 300V 10A datasheet

Abstract: FGA90N30D
Contextual Info: FGA90N30D 300V PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential.

igbt 300V 10A datasheet

Abstract: igbt 200v 20a FGFP30N30DTU FGPF30N30D RG601 igbt 200v 30a
Contextual Info: FGPF30N30D 300V, 30A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30D offers the optimum solution for PDP applications where lowcondution loss is essential.

igbt 300V 30A

Abstract: igbt 300V 10A datasheet FGPF30N30TD igbt 200v 20a
Contextual Info: FGPF30N30TD tm 300V, 30A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

FGPF70N30TD

Abstract: igbt 300V 10A datasheet
Contextual Info: FGPF70N30TD 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

igbt 150v 30a

Abstract: 7464 ic datasheet 60A 150V IGBT
Contextual Info: TYPICAL PERFORMANCE CURVES APT60GU30B APT60GU30S APT60GU30B_S 300V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

IXGX400N30A3

Abstract: IXGK400N30A3 PLUS247 ixgx400
Contextual Info: IXGK400N30A3 IXGX400N30A3 GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V Ultra-low Vsat PT IGBTs for up to 10kHz switching TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300

Contextual Info: GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGK400N30A3 IXGX400N30A3 Ultra-low Vsat PT IGBTs for up to 10kHz switching TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300

200N30PB

Abstract: 200n30
Contextual Info: Preliminary Technical Information GenX3TM 300V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH100N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

200N30PB

Abstract: IXGH100N30B3 200n3 200n30
Contextual Info: Preliminary Technical Information GenX3TM 300V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH100N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 VCES IC110 VCE sat tfi typ High Speed PT IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous

IXGH100N30C3

Abstract: 100N30 100N30C3
Contextual Info: Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 VCES IC110 VCE sat tfi typ High Speed PT IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous

Contextual Info: Power Module 600V 200A IGBT Module MG06200S-BN4MM RoHS Features • H  igh short circuit capability, self limiting short circuit current • F  ree wheeling diodes with fast and soft reverse recovery • V  CE sat with positive temperature coefficient