IGBT 300V 70A Search Results

FGPF70N30TU

Abstract: FGPF70N30 FGPF70N30T igbt 70a
Contextual Info: FGPF70N30 300V, 70A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF70N30 offers the optimum solution for PDP applications where low-condution

FGA70N30TD

Contextual Info: FGA70N30TD 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

FGPF70N30TD

Abstract: igbt 300V 10A datasheet
Contextual Info: FGPF70N30TD 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

FGPF70N30T

Abstract: igbt 200v 20a transistor* igbt 70A 300 V FGPF70N30TTU
Contextual Info: FGPF70N30T 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

IGBT 40A

Abstract: igbt 300V 70A FGA70N30T FGA70N30TTU
Contextual Info: FGA70N30T 300V, 70A PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

Contextual Info: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

Contextual Info: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

Contextual Info: APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT3 Power Module Trench & Field Stop IGBT3 Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies

APT0406

Abstract: APT0502 NTC 10 thermistor
Contextual Info: APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies

Contextual Info: APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT3 Power Module Trench & Field Stop IGBT3 Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80°C Application • Solar converter  Uninterruptible Power Supplies

SANKEN BRIDGE DIODE 50A

Abstract: sanken diode
Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC ＳＬＡ５２２７ Features ・Built-in IGBT and diode bridge of partial switching PFC circuit Enable to reduce mounting area ・Low saturation voltage IGBT VCE sat = 1.7V max ・Low saturation voltage diode bridge VF = 1.1V max

NTC 20 SP 010

Contextual Info: CM35MX-24A NX-Series CIB Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com (3Ø Converter + 3Ø Inverter + Brake) 35 Amperes/1200 Volts AJ AK AG A K E AH F G J L K M K M K K AA AB C K L K K K DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

SPM6G150-060D

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G150-060D TECHNICAL DATA DATASHEET 4113, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

CM35MX-24A

Contextual Info: CM35MX-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 35 Amperes/1200 Volts AJ AK AG A D K E AH F G J H L K M K M K K AA AB C K L K K K DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

Contextual Info: APTGU70A60T Phase leg PT IGBT Power Module VCES = 600V IC = 70A @ Tc = 80°C Application VBUS NTC2 • • • • Q1 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Power MOS 7 Punch Through PT IGBT

Contextual Info: APTGU70DH60T Asymmetrical - Bridge PT IGBT Power Module VCES = 600V IC = 70A @ Tc = 80°C Application VBUS VBUS SENSE Q1 G1 CR3 • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features Power MOS 7 Punch Through PT IGBT

Contextual Info: APTGU70SK60T Buck chopper PT IGBT Power Module VCES = 600V IC = 70A @ Tc = 80°C Application VBUS • • NTC2 Q1 AC and DC motor control Switched Mode Power Supplies G1 Features Power MOS 7 Punch Through PT IGBT - Low conduction loss - Ultra fast tail current shutoff

irgp4086

Abstract: IRGP4086PBF igbt display plasma IRFPE30
Contextual Info: PD - 97132 IRGP4086PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM l Low VCE on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

Contextual Info: APTGU70H60T Full - Bridge PT IGBT Power Module VCES = 600V IC = 70A @ Tc = 80°C Application • • • • VBUS Q3 Q1 G3 G1 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features E3 OUT2 Q2 Q4 G2 G4 E2 E4 NTC1

Contextual Info: APTGU70DA60T Boost chopper PT IGBT Power Module VCES = 600V IC = 70A @ Tc = 80°C Application NTC2 VBUS VBUS SENSE • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction CR1 Features Power MOS 7 Punch Through PT IGBT - Low conduction loss

Contextual Info: tSENSITRON SPM6G150-060D SEMICONDUCTOR TECHNICAL DATA DATASHEET 4113, REV ENG- Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

Contextual Info: APTGU70SK60T Buck chopper PT IGBT Power Module VCES = 600V IC = 70A @ Tc = 80°C Application • • AC and DC motor control Switched Mode Power Supplies Features Power MOS 7 Punch Through PT IGBT - Low conduction loss - Ultra fast tail current shutoff

Contextual Info: APTGU70H60T Full - Bridge PT IGBT Power Module VCES = 600V IC = 70A @ Tc = 80°C Application • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Power MOS 7 Punch Through PT IGBT - Low conduction loss