IGBT 318 Search Results

IGBT 318 Result Highlights (5)

Part	Manufacturer	Description
GT50J123	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)
GT20J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS
GT30J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)
GT30J122A	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)
GT20J341	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS

IGBT 318 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
132-gd Abstract: 132 gd 120 24v 125A IGBT Igbt 318 Contextual Info: SKiiP 132 GD 120 - 318 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms	Original		PDF
132 gd 120 Abstract: skiip gd 120 semikron skiip 33 SKIIP DRIVER GD 132-gd semikron skiip 132 GDL Contextual Info: SKiiP 132 GD 120 - 318 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms	Original	IGBT11) Rthjs10) 132 gd 120 skiip gd 120 semikron skiip 33 SKIIP DRIVER GD 132-gd semikron skiip 132 GDL	PDF
Contextual Info: Ordering number : ENA2308A NGTB30N60L2WG N-Channel IGBT 600V, 30A, VCE sat ;1.4V, TO-247-3L with Low VF Switching Diode Features http://onsemi.com Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V)  IGBT IC=100A (Tc=25C)  IGBT tf=80ns typ.	Original	ENA2308A NGTB30N60L2WG O-247-3L A2308-8/8	PDF
Contextual Info: Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE sat ;1.4V http://onsemi.com Features Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency applications	Original	ENA2308B NGTB30N60L2WG A2308-8/8	PDF
Contextual Info: Ordering number : EN*A2308 NGTB30N60L2WG Advance Information http://onsemi.com N-Channel IGBT 600V, 100A, VCE sat ;1.4V TO-247-3L with Low VF Switching Diode Electrical Connection C(2) Features • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT tf=80ns typ.	Original	A2308 NGTB30N60L2WG O-247-3L 340AM A2308-8/8	PDF
Fast Recovery Bridge Rectifier, 60A, 600V Abstract: APT10035LLL APT64GA90LD30 MIC4452 Contextual Info: APT64GA90LD30 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT64GA90LD30 shifte106) Fast Recovery Bridge Rectifier, 60A, 600V APT10035LLL APT64GA90LD30 MIC4452	PDF
Contextual Info: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT64GA90LD30 APT64GA90B2D30 O-247	PDF
3525 boost Abstract: IGBT full bridge APT64GA90B MIC4452 Contextual Info: APT64GA90B 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT64GA90B 3525 boost IGBT full bridge APT64GA90B MIC4452	PDF
APT64GA90B2D30 Abstract: IGBT 900v 60a Fast Recovery Bridge Rectifier, 60A, 600V APT10035LLL APT64GA90LD30 MIC4452 1000A MOS Contextual Info: APT64GA90B2D30 APT64GA90LD30 900V APT64GA90B2D30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT64GA90B2D30 APT64GA90LD30 APT64GA90B2D30 IGBT 900v 60a Fast Recovery Bridge Rectifier, 60A, 600V APT10035LLL APT64GA90LD30 MIC4452 1000A MOS	PDF
IGBT 900v 60a Abstract: Fast Recovery Bridge Rectifier, 60A, 600V MIC4452 APT64GA90B2D30 APT64GA90LD30 Contextual Info: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT64GA90LD30 APT64GA90B2D30 IGBT 900v 60a Fast Recovery Bridge Rectifier, 60A, 600V MIC4452 APT64GA90B2D30 APT64GA90LD30	PDF
Contextual Info: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT64GA90LD30 APT64GA90B2D30 APT64GA90LD30 APT64GA90B2D30 O-247	PDF
APT64GA90B Abstract: MIC4452 DIODE 76A Contextual Info: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT64GA90B APT64GA90S APT64GA90B MIC4452 DIODE 76A	PDF
APT64GA90B Abstract: MIC4452 DIODE 76A Contextual Info: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT64GA90B APT64GA90S APT64GA90B MIC4452 DIODE 76A	PDF
Contextual Info: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	APT64GA90B APT64GA90S	PDF

diode 300v 20a Abstract: diode 20a 300v Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom	Original		PDF
E3224 Abstract: diode 528 Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom	Original	E3224 E3224 diode 528	PDF
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC E3224 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung	Original	E3224 E3224	PDF
E3224 Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom	Original	E3224 E3224	PDF
E3224 Abstract: igbt module bsm 300 Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom	Original	E3224 E3224 igbt module bsm 300	PDF
E3224 Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom	Original	E3224 E3224	PDF
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage	Original		PDF
132-gd Abstract: TR 132-GD 132 gd 120 132Gd 120 132Gd 132 gd SKIIP GD Igbt 318 Contextual Info: SKiiP 132 GD 120 - 318 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C	Original	\marketin\datenbl\skiippac\sensor\d132gd 132-gd TR 132-GD 132 gd 120 132Gd 120 132Gd 132 gd SKIIP GD Igbt 318	PDF
Contextual Info: NGD15N41CL Product Preview Ignition IGBT 15 Amps, 410 Volts N–Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGD15N41CL	PDF
vla531 Abstract: inverter welding machine circuit board ups manufacturing transformer diagram 180v dc motor drive circuit diagram 300w 24v dc motor speed controller inverter 12v 220v with igbt ups circuit diagram using igbt IGBT inverter 12v 220v inverters circuit diagram igbt VLA531-01R Contextual Info: IDC PRODUCTS for Power Electronics セレクションガイドブック/ Selection guide book IGBTドライバ IGBT drivers IGBT drivers システム電源 DC-DCコンバータ Power units DC‐DC converters -1- February 2009 目次 / INDEX ●イサハヤ電子製品群の展開領域	Original		PDF

IGBT 318 Search Results

IGBT 318 Result Highlights (5)

IGBT 318 Datasheets Context Search

132-gd

132 gd 120

Fast Recovery Bridge Rectifier, 60A, 600V

3525 boost

APT64GA90B2D30

IGBT 900v 60a

APT64GA90B

APT64GA90B

diode 300v 20a

E3224

E3224

E3224

E3224

132-gd

vla531