IGBT 600V 20A Search Results

Contextual Info: SIGC18T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC18T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 20A

Contextual Info: SIGC18T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC18T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 20A

IXGH36N60B3C1

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGH36N60B3C1 = = ≤ = 600V 36A 1.8V 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES

SIGC18T60N

Contextual Info: Preliminary SIGC18T60N IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC18T60N 600V This chip is used for: • IGBT Modules G Applications: • drives

IXGR60N60C3C1

Abstract: G60N60 60N60C3 IF110 ISOPLUS247
Contextual Info: IXGR60N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES

GP19NC60SD

Abstract: JESD97 STGP19NC60SD
Contextual Info: STGP19NC60SD N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT Features Type VCES STGP19NC60SD 600V VCE sat (typ)@150°C IC @100°C < 1.35V 20A • Very low on-voltage drop (VCE(sat) ■ High input impedance (voltage driven) ■ IGBT co-packaged with ultrafast freewheeling

G60N60

Abstract: IF110 ISOPLUS247 IXGR60N60C3C1 I40-13 Ultra fast diode
Contextual Info: IXGR60N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES

SIGC18T60NC

Contextual Info: Preliminary SIGC18T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC18T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives

Contextual Info: Preliminary SIGC18T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC18T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives

IXGH36N60B3C1

Abstract: IF110 g36n60b3c1 Schottky Diode 400V 15A
Contextual Info: Preliminary Technical Information IXGH36N60B3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 36A 1.8V 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES

Contextual Info: GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode IXGR60N60C3C1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES

GP19NC60S

Abstract: JESD97 STGP19NC60S
Contextual Info: STGP19NC60S N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT Features Type VCES STGP19NC60S 600V VCE sat (typ)@150°C IC @100°C < 1.35V 20A • Very low on-voltage drop (VCE(sat) ■ High input impedance (voltage driven) ■ IGBT co-packaged with ultrafast freewheeling

Contextual Info: TOSHIBA MIG20J805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 30 20A/600V IGBT

Contextual Info: TOSHIBA MIG20J805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage : 30 20A/600V IGBT

DC 300V to 15V converter

Abstract: igbt 600v 20a MIG20J805H n channel 600v 20a IGBT toshiba a 200 inverter P channel 600v 20a IGBT
Contextual Info: TOSHIBA MIG20J805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage : Z<j> 20A/600V IGBT

ixgh48n60c3c1

Abstract: IXGH48N60 48n60 IF110 48N60C3
Contextual Info: Preliminary Technical Information IXGH48N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 48A 2.5V 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings

P channel 600v 20a IGBT

Abstract: MIG toshiba IGBT 800v 20a mig20j
Contextual Info: TOSHIBA TENTATIVE MIG20J855 TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG 2 0J855 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : Z<j> 20A/600V IGBT

Contextual Info: Preliminary Technical Information IXGH48N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 48A 2.5V 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions VCES TJ = 25°C to 150°C 600

P channel 600v 20a IGBT

Abstract: MIG20J805 N channel 600v 20a IGBT IGBT 800v 20a
Contextual Info: T O SH IB A TENTATIVE MIG20J805 TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 3y5 20A/600V IGBT

Contextual Info: T O SH IB A MIG20J805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage : 3y5 20A/600V IGBT

IXGH48N60B3C1

Abstract: IF110 48n60 DS100140A IXGH48N60
Contextual Info: Preliminary Technical Information IXGH48N60B3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 48A 1.8V 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGH48N60B3C1 = = ≤ = 600V 48A 1.8V 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C

g60n

Abstract: 60N60C
Contextual Info: GenX3TM 600V IGBT w/ Diode IXGR60N60C3D1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR

mosfet 1200V 40A

Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S
Contextual Info: LC-96585.5 2-sided r2 8/24/00 7:22 PM Page 1 HOLE PUNCH THIS EDGE www.intersil.com Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through NPT . Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA