IGBT 600V 35A Search Results

Contextual Info: Preliminary Technical Information IXGR72N60C3 GenX3TM 600V IGBT VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = £ = 600V 35A 2.7V 55ns High-Speed Low-Vsat PT IGBT 40-100 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES

Contextual Info: XPTTM 600V IGBT GenX3TM w/ Diode MMIX1X100N60B3H1 Electrically Isolated Tab VCES = 600V IC110 = 68A VCE(sat) ≤ 1.80V Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR

Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM IXXH100N60C3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

Contextual Info: IXXH100N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30 kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Maximum Ratings

FGW35N60HD

Contextual Info: / FGW35N60HD Discrete IGBT Discrete IGBT High-Speed V series 600V / 35A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply

FGW35N60H

Contextual Info: / FGW35N60H Discrete IGBT Discrete IGBT High-Speed V series 600V / 35A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply

BSM20GP60

Abstract: BSM35GP120 BSM25GP120 BSM50GP120 BSM15GP120 IGBT 600v 20a 600v 20a IGBT 600v 20a IGBT driver BSM30GP60 FP50R12KS4C
Contextual Info: power the Home Products PIM News Contact Editorials Job Offers Company Search Site Content IGBT Modules . . . . . . . . . . . 10A 15A 20A 25A 30A 35A 35A 50A 50A 75A 100A IGBT Driver 600V Low Loss 1200V Low Loss BSM10GP60 BSM15GP60 BSM20GP60 BSM10GP120 BSM15GP120

FGW75N60HD

Abstract: FGW75N60 fgw75 secret
Contextual Info: / FGW75N60HD Discrete IGBT Discrete IGBT High-Speed V series 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply

100n60

Abstract: IXXR100N60B3H1
Contextual Info: Advance Technical Information IXXR100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings

100n60

Contextual Info: Preliminary Technical Information IXXK100N60B3H1 IXXX100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-264 (IXXK) Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXR100N60B3H1 (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings

FGW50N60VD

Abstract: FGW50N60
Contextual Info: / FGW50N60VD Discrete IGBT Discrete IGBT High-Speed V series 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive

APT80GP60J

Contextual Info: APT80GP60J 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXXN100N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings

IC 7427

Abstract: IC 7427 datasheet APT80GP60JDF3
Contextual Info: APT80GP60JDF3 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

IXXX100N60B3H1

Abstract: ixxk100n60b3h1
Contextual Info: IXXK100N60B3H1 IXXX100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC100 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

Contextual Info: XPTTM 600V GenX3TM w/ Diode VCES IC100 VCE sat tfi(typ) IXXK100N60B3H1 IXXX100N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

IXXN100N60B3H1

Contextual Info: Advance Technical Information IXXN100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C

100N60C3

Abstract: IXXK100N60C3H1 IXXX100N60C3H1 IF110 PLUS247 100n60
Contextual Info: Preliminary Technical Information IXXK100N60C3H1 IXXX100N60C3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C

Contextual Info: Preliminary Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXXK100N60C3H1 IXXX100N60C3H1 Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 100A 2.20V 75ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C

STGW35NB60S

Abstract: JESD97 light dimmer igbt GW35NB60S
Contextual Info: STGW35NB60S N-channel 35A - 600V - TO-247 Low drop PowerMESH IGBT Features Type VCES STGW35NB60S 600V IC VCE sat (Max)@ 25°C @100°C < 1.7V • Low on-voltage drop (VCEsat) ■ Low input capacitance ■ High current capability 35A TO-247 Description Using the latest high voltage technology based on

Contextual Info: Preliminary Technical Information XPTTM 600V GenX3TM w/ Diode MMIX1X100N60B3H1 Electrically Isolated Tab VCES = 600V IC90 = 60A VCE(sat) ≤ 1.80V Medium-Speed Low-Vsat PT IGBT for 10-30 kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

Contextual Info: IXXK100N60B3H1 IXXX100N60B3H1 XPTTM 600V IGBTs GenX3TM w/ Diode VCES IC100 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

Contextual Info: Preliminary Technical Information XPTTM 600V GenX3TM w/ Diode MMIX1X100N60B3H1 Electrically Isolated Tab VCES = 600V IC90 = 60A VCE(sat) ≤ 1.80V Medium-Speed Low-Vsat PT IGBT for 10-30 kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C