IGBT 800A Search Results

4mbi400vg

Abstract: 4MBI400VG-060R-50 4mbi400vg060r50 4mbi400vg-060
Contextual Info: / 4MBI400VG-060R-50 IGBT Modules IGBT MODULE V series 600V / 400A / IGBT, RB-IGBT 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure Featuring Reverse Blocking IGBT (RB-IGBT)

FZ800R17KF6CB2

Abstract: KF6C
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values

eupec igbt

Abstract: IGBT FZ 1800 FZ800R17KF6CB2 IGBT module FZ 1200 IGBT FZ 800
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values

IGBT module FZ 1200

Abstract: KF6C FZ800R17KF6CB2
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values

diode 1700v

Abstract: FZ800R17KF6CB2
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values

MITSUBISHI CM400

Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
Contextual Info: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES  High speed low loss IGBT. Low-injection punch-through IGBT.  Low driving power due to low input capacitance MOS gate.  High speed low recovery loss diode.

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD400S45KL3_B5 hochisolierendesModul highinsulatedmodule VCES = 4500V IC nom = 400A / ICRM = 800A TypischeAnwendungen • Hochleistungsumrichter • Mittelspannungsantriebe • Motorantriebe

74hc06

Abstract: TLP250 IGBT 10KHz IR2171 ptmb50e6c igbt rcd SCR 207A 50A 1200V SCR SCR 100A 1200V Equivalent for SCR 207A
Contextual Info: 目录 各种功率半导体器件和IGBT IGBT模块电路构成 IGBT模块的额定值和特性 IGBT模块的损耗和散热设计 IGBT模块的门极驱动 上桥臂的驱动 3相供电VVVF变频器系统框图 IGBT元件的短路和过电压保护 IGBT元件的过电压保护缓冲电路

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ400R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 400A / ICRM = 800A TypischeAnwendungen • Mittelspannungsantriebe

74hc06

Abstract: equivalent components for scr 207a SCR 207A 15KW igbt 200 A 1200 V TLP250 200V igbt 15KW igbt SCR 100A 1200V 0.75KW* LG IGBT
Contextual Info: 목차 각종 전력 소자와 IGBT 2 IGBT 모듈의 회로 구성 4 IGBT 모듈의 정격 및 특성 6 IGBT의 모듈 손실과 방열 10 IGBT 모듈의 게이트 구동 20 상부 구동 24 3상 브리지 인버터 26 단락 및 과전압 보호 30 스너버 회로

Hitachi DSA00281

Abstract: MBN800
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10014 R0 MBN800H45E2 Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

diod t4

Abstract: p j 85 diod GA400TD25S t4 diod INT-A-PAK Dual weight diod 800A
Contextual Info: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

Contextual Info: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

silicon thermal grease g747

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08038 R1 MBL800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10004 R2 MBN800H45E2-H P1 Target Specification Silicon N-channel IGBT 4500V E2 version FEATURES  Low switching loss IGBT module.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.

GA400TD60U

Contextual Info: PD - 5.059B PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

GSA400BA60

Abstract: jc31 welder inverter
Contextual Info: IGBT MODULE GSA400BA60 UL;E76102 M SanRex IGBT Module GSA400BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and with a fast switching, soft recovery diode trr=0.1 s reverse connected across each IGBT.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-05015 R3 MBN800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.

Contextual Info: MITSUBISHI IGBT MODULES CM400HA-34H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching appli­ cations. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast

dc welder

Abstract: sanrex IGBT welder inverter AC welder IGBT circuit igbt ac motor speed control IGBT welder circuit GSA400AA120
Contextual Info: IGBT MODULE GSA400AA120 UL;E76102 M SanRex IGBT Module GSA400AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and with a fast switching, soft recovery diode trr=0.1 s reverse connected across each IGBT.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-05015 R3 MBN800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.

GA400TD25S

Contextual Info: PD -50051C GA400TD25S "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

3b0565

Abstract: KIT_XC2785X_SK TC1167
Contextual Info: Microcontroller Board Name 6ED100HP2-FA Products Description Order No. 1ED020I12-FA Driver board for HybridPACK 2 IGBT modules, employing coreless transformer single-channel driver 1ED020I12-FA. IGBT module to be ordered seperately. SP000552868 Driver board for HybridPACK™1 IGBT modules, employing