IGBT 900V 50A Search Results
IGBT 900V 50A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| GT30J110SRA |
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IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
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| GT30N135SRA |
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IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 |
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| GT30J65MRB |
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IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) |
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| TLP5702H |
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Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
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| TLP5705H |
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Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L |
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IGBT 900V 50A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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diode schottky 600v
Abstract: phase shift resistance welding APT43GA90B MIC4452 .47 j 100
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APT43GA90B diode schottky 600v phase shift resistance welding APT43GA90B MIC4452 .47 j 100 | |
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Contextual Info: APT50GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT50GP90B O-247 APT50GP90B T0-247 | |
APT25GP90BDF1
Abstract: T0-247 T0247 package NF 833
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APT25GP90BDF1 O-247 APT25GP90BDF1 T0-247 T0247 package NF 833 | |
APT43GA90B
Abstract: MIC4452
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APT43GA90B APT43GA90B MIC4452 | |
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Contextual Info: APT50GP90B2DF2 900V POWER MOS 7 IGBT T-MaxTM ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT50GP90B2DF2 APT50GP90B2DF2 | |
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Contextual Info: APT43GA90B APT43GA90S 900V High Speed PT IGBT B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low |
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APT43GA90B APT43GA90S Ver81 | |
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Contextual Info: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT25GP90BDF1 O-247 | |
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Contextual Info: APT43GA90B APT43GA90S 900V High Speed PT IGBT B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low |
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APT43GA90B APT43GA90S | |
diode schottky 600vContextual Info: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low |
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APT43GA90BD30 APT43GA90SD30 diode schottky 600v | |
APT43GA90B
Abstract: APT43GA90S MIC4452 117 IC 100-C43
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APT43GA90B APT43GA90S APT43GA90B APT43GA90S MIC4452 117 IC 100-C43 | |
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Contextual Info: APT50GP90JDF2 900V POWER MOS 7 IGBT E E ® G The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT50GP90JDF2 APT50GP90JDF2 | |
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Contextual Info: APT50GP90J 900V POWER MOS 7 IGBT 27 2 T- C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT50GP90J APT50GP90J | |
APT43GA90B
Abstract: APT43GA90BD30 MIC4452 RECTIFIER DIODE 1000A schottky
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APT43GA90BD30 APT43GA90B APT43GA90B APT43GA90BD30 MIC4452 RECTIFIER DIODE 1000A schottky | |
D-6020
Abstract: APT25GP90B T0-247
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APT25GP90B O-247 D-6020 APT25GP90B T0-247 | |
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Contextual Info: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT25GP90B O-247 | |
APT25GP90BDF1Contextual Info: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT25GP90BDF1 O-247 APT25GP90BDF1 | |
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Contextual Info: TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT25GP90B O-247 | |
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Contextual Info: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT25GP90B O-247 | |
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Contextual Info: APT43GA90BD30 APT43GA90SD30 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low |
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APT43GA90BD30 APT43GA90SD30 TYP11 | |
RECTIFIER DIODE 1000A schottky
Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90BD30 APT43GA90SD30 MIC4452 SD30
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APT43GA90BD30 APT43GA90SD30 TYPI67 RECTIFIER DIODE 1000A schottky Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90BD30 APT43GA90SD30 MIC4452 SD30 | |
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Contextual Info: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT25GP90BDF1 O-247 | |
RECTIFIER DIODE 1000A schottky
Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90B APT43GA90BD30 MIC4452
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APT43GA90BD30 APT43GA90B RECTIFIER DIODE 1000A schottky Fast Recovery Bridge Rectifier, 60A, 600V APT43GA90B APT43GA90BD30 MIC4452 | |
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Contextual Info: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency |
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APT25GP90B O-247 | |
IC 7476
Abstract: 7476 IC datasheet IC 7476 datasheet datasheet IC 7476 APT25GP90BDQ1G 7476 data sheet 7476 datasheet APT25GP90BDQ1
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APT25GP90BDQ1 APT25GP90BDQ1 APT25GP90BDQ1G* Volta10) IC 7476 7476 IC datasheet IC 7476 datasheet datasheet IC 7476 APT25GP90BDQ1G 7476 data sheet 7476 datasheet | |