IGBT 900V 80A Search Results

Contextual Info: Advance Technical Information IXYN80N90C3H1 900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC90 VCE sat tfi(typ) = = ≤ = 900V 70A 2.7V 86ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

Contextual Info: Preliminary Technical Information IXYH40N90C3D1 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

40N90C3D1

Contextual Info: Advance Technical Information 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYH40N90C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

IXYH40N90C3D1

Contextual Info: Advance Technical Information IXYH40N90C3D1 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

40N90C3D1

Contextual Info: Advance Technical Information IXYH40N90C3 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

Contextual Info: Preliminary Technical Information IXYH40N90C3 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

Contextual Info: Advance Technical Information 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYH40N90C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

80n90

Abstract: 80N90C3 IXYT80N90C3 IXYH80N90C3
Contextual Info: Advance Technical Information IXYT80N90C3 IXYH80N90C3 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 80A 2.7V 86ns TO-268 (IXYT) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

80n90

Contextual Info: Advance Technical Information 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) IXYT80N90C3 IXYH80N90C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 80A 2.7V 86ns TO-268 (IXYT) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: Preliminary Technical Information IXYT80N90C3 IXYH80N90C3 XPTTM 900V IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 80A 2.7V 86ns TO-268 (IXYT) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

APT10035LLL

Abstract: APT80GA90LD40 MIC4452
Contextual Info: APT80GA90LD40 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: APT80GA90LD40 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: APT80GA90LD40 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

IGBT 900V 80A

Abstract: APT40GP90B2DF2
Contextual Info: TYPICAL PERFORMANCE CURVES APT40GP90B2DF2 APT40GP90B2DF2 900V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: TYPICAL PERFORMANCE CURVES APT40GP90B APT40GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

IGBT 900V 80A

Abstract: 228F APT40GP90B T0-247
Contextual Info: APT40GP90B TYPICAL PERFORMANCE CURVES APT40GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

pearson 411

Abstract: ic 4560 APT80GA90LD40 APT10035LLL MIC4452 power Diode 20A
Contextual Info: APT80GA90B2D40 APT80GA90LD40 900V APT80GA90B2D40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT40GP90J

Contextual Info: APT40GP90J APT40GP90J TYPICAL PERFORMANCE CURVES 900V E E POWER MOS 7 IGBT C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT10035LLL

Abstract: APT46GA90JD40 MIC4452 max4170
Contextual Info: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

IGBT 900V 80A

Abstract: 196F 20A 100 V ISOTOP Diode 20A 1,0V ISOTOP
Contextual Info: APT40GP90JDF2 APT40GP90JDF2 TYPICAL PERFORMANCE CURVES 900V E E POWER MOS 7 IGBT C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT40GP90JDF2 APT40GP90JDF2 TYPICAL PERFORMANCE CURVES 900V E E POWER MOS 7 IGBT C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Ultrafast Recovery Rectifier Bridge

Abstract: APT10035LLL APT46GA90JD40 MIC4452
Contextual Info: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low