Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IGBT DESATURATION Search Results

    IGBT DESATURATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT DESATURATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGPT CIRCUIT

    Abstract: IGBT Gate Drive Optocoupler IGBT desaturation IC 3160 hcpl 3160 power electronic transistor IGPT HCPL-3160
    Text: H 2.0 Amp IGBT Gate Drive Optocoupler with Integrated Over-current Protection and Fault Feedback Preliminary Technical Data HCPL-3160 Features Description • Integrated IGBT Desaturation Protection • Integrated Optically Isolated IGBT Fault Status Feedback


    Original
    PDF HCPL-3160 HCPL-3160 SO-16 IGPT CIRCUIT IGBT Gate Drive Optocoupler IGBT desaturation IC 3160 hcpl 3160 power electronic transistor IGPT

    IGBT Gate Drive Optocoupler

    Abstract: IGPT CIRCUIT controller for PWM with IGBT IGBT desaturation HCPL-3160 HCPL316
    Text: H 2.0 Amp IGBT Gate Drive Optocoupler with Integrated Over-current Protection and Fault Feedback Preliminary Technical Data HCPL-3160 Features Description • Integrated IGBT Desaturation Protection • Integrated Optically Isolated IGBT Fault Status Feedback


    Original
    PDF HCPL-3160 HCPL-3160 SO-16 IGBT Gate Drive Optocoupler IGPT CIRCUIT controller for PWM with IGBT IGBT desaturation HCPL316

    MITSUBISHI CM400

    Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


    Original
    PDF 20kHz MITSUBISHI CM400 MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h

    M57962AL

    Abstract: DATA SHEET OF IGBT IGBT control circuit igbt welding igbt wiring Igbt 15kV 600A M57962 "IGBT Driver" IGBT with V-I characteristics OPTO COUPLER
    Text: QC962 Hybrid Integrated IGBT Driver QC962 is a hybrid integrated IGBT driver designed for driving N-channel IGBT modules in any gate amplifier application. The device provides the required electrical isolation between input and output with the opto-coupler.


    Original
    PDF QC962 QC962 pin13 pin14 3300pF 51MAX 10MAX M57962AL DATA SHEET OF IGBT IGBT control circuit igbt welding igbt wiring Igbt 15kV 600A M57962 "IGBT Driver" IGBT with V-I characteristics OPTO COUPLER

    SCHEMATIC 10kw POWER SUPPLY WITH IGBTS

    Abstract: 100A/IGBT DRIVER SCHEMATIC schematic diagram UPS 10kw SCHEMATIC 100kw POWER SUPPLY WITH IGBTS schematic diagram UPS inverter 1kv TD350 FP50R12KE3 schematic diagram 24v UPS AN1944 schematic diagram UPS inverter
    Text: AN1944 Application note Developing IGBT applications using an TD350 advanced IGBT driver Introduction The TD350 is an advanced Insulated Gate Bipolar Transistor IGBT driver with integrated control and protection functions. The TD350 is especially adapted for driving 1200V IGBTs


    Original
    PDF AN1944 TD350 SCHEMATIC 10kw POWER SUPPLY WITH IGBTS 100A/IGBT DRIVER SCHEMATIC schematic diagram UPS 10kw SCHEMATIC 100kw POWER SUPPLY WITH IGBTS schematic diagram UPS inverter 1kv FP50R12KE3 schematic diagram 24v UPS AN1944 schematic diagram UPS inverter

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6G180-060D TECHNICAL DATA DATASHEET 4245, REV - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 180 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G180-060D /-20V 125oC

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA Datasheet 4165, Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G060-120D /-20V

    LIN opto isolator

    Abstract: SPM6G080-060D IC 4098
    Text: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G080-060D /-20V LIN opto isolator SPM6G080-060D IC 4098

    Sensitron Semiconductor

    Abstract: 210C DS34C87 SFH6186-4 SPM6G060-120D SPM6G060-120D-B
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.3 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G060-120D Sensitron Semiconductor 210C DS34C87 SFH6186-4 SPM6G060-120D SPM6G060-120D-B

    IGBT desaturation

    Abstract: SPM6G060-120D IGBT 50 amp 1200 volt
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA Datasheet 4165, Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G060-120D /-20V IGBT desaturation SPM6G060-120D IGBT 50 amp 1200 volt

    IC53A

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.2 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G060-120D IC53A

    LIN opto isolator

    Abstract: diode piv 800 50A IGBT desaturation SPM6G080-120D
    Text: SENSITRON SEMICONDUCTOR SPM6G080-120D TECHNICAL DATA DATASHEET 4099, REV D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G080-120D /-20V LIN opto isolator diode piv 800 50A IGBT desaturation SPM6G080-120D

    diode sy 160

    Abstract: n 4113 SPM6G150-060D
    Text: SENSITRON SEMICONDUCTOR SPM6G150-060D TECHNICAL DATA DATASHEET 4113, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G150-060D /-20V diode sy 160 n 4113 SPM6G150-060D

    IGBT 500V 35A

    Abstract: power supply switching 24-2 OPTO ISOLATOR high temperature 210C DS34C87 SFH6186-4 SPM6G060-120D 10000Watt
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.2 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G060-120D IGBT 500V 35A power supply switching 24-2 OPTO ISOLATOR high temperature 210C DS34C87 SFH6186-4 SPM6G060-120D 10000Watt

    2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM

    Abstract: DS34C87 LIN opto isolator SFH6186-4 SPM6G070-060D
    Text: SENSITRON SEMICONDUCTOR SPM6G070-060D TECHNICAL DATA DATASHEET 4328, Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G070-060D 2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM DS34C87 LIN opto isolator SFH6186-4 SPM6G070-060D

    Untitled

    Abstract: No abstract text available
    Text: tSENSITRON SPM6G150-060D SEMICONDUCTOR TECHNICAL DATA DATASHEET 4113, REV ENG- Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G150-060D /-20V 125oC

    5000watt

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=25 C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G060-120D 5000watt

    SPM6G150-060D

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6G150-060D TECHNICAL DATA DATASHEET 4113, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G150-060D /-20V SPM6G150-060D

    IC 4098

    Abstract: IGBT desaturation SPM6G080-060D 4098
    Text: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G080-060D /-20V IC 4098 IGBT desaturation SPM6G080-060D 4098

    IGBT DRIVER SCHEMATIC 3 PHASE

    Abstract: Hall 221 hall current sensors IGBT 250 amp 3 phase IGBT gate driver 1200 tp 806 igbt desaturation driver schematic SPM6G250-120D IGBT 50 amp 1200 volt IGBT DRIVER SCHEMATIC
    Text: SENSITRON SEMICONDUCTOR SPM6G250-120D TECHNICAL DATA DATASHEET 4109, REV ENG- Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 250 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G250-120D /-20V IGBT DRIVER SCHEMATIC 3 PHASE Hall 221 hall current sensors IGBT 250 amp 3 phase IGBT gate driver 1200 tp 806 igbt desaturation driver schematic SPM6G250-120D IGBT 50 amp 1200 volt IGBT DRIVER SCHEMATIC

    C 4977

    Abstract: ON 4977 3 phase IGBT gate driver 1200 3 phase IGBT gate driver 4977 IGBT gate driver ic DS34C87 SPM6G140-060D OF IGBT
    Text: SENSITRON SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA Data Sheet 4977 Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G140-060D C 4977 ON 4977 3 phase IGBT gate driver 1200 3 phase IGBT gate driver 4977 IGBT gate driver ic DS34C87 SPM6G140-060D OF IGBT

    4100 data sheet

    Abstract: IGBT gate driver ic 210C DS34C87 SFH6186-4 SPM6G120-120D
    Text: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA Data Sheet 4100 Rev. B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G120-120D 4100 data sheet IGBT gate driver ic 210C DS34C87 SFH6186-4 SPM6G120-120D

    IGBT 60A

    Abstract: tp 806 IGBT DRIVER SCHEMATIC 3 PHASE SPM6G140-120D
    Text: SENSITRON SEMICONDUCTOR SPM6G140-120D TECHNICAL DATA DATASHEET 4100, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G140-120D /-20V 125oC IGBT 60A tp 806 IGBT DRIVER SCHEMATIC 3 PHASE SPM6G140-120D

    driver igbt high side 1500V

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA Data Sheet 4100 REV.A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE


    Original
    PDF SPM6G120-120D 125oC driver igbt high side 1500V