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    IGBT DRIVE 50V 300A Search Results

    IGBT DRIVE 50V 300A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN1300ANC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IGBT DRIVE 50V 300A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PC817 example circuits

    Abstract: opto isolator pc817 m57962l dz4in1 pc817 circuit M57959L/M57962L optocoupler IC PC817 pin details M57962L Application Note schematic diagram inverter 12v to 24v 30a M57959L
    Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 5.0 Driving IGBT Modules When using high power IGBT modules it is often desirable to completely isolate control circuits from the gate drive. A block diagram of this type of gate drive is


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    PDF 6V-18V, 100ns) M57994-01 PC817 example circuits opto isolator pc817 m57962l dz4in1 pc817 circuit M57959L/M57962L optocoupler IC PC817 pin details M57962L Application Note schematic diagram inverter 12v to 24v 30a M57959L

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


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    PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    IGBT DRIVER SCHEMATIC

    Abstract: IGBT DRIVER SCHEMATIC chip M57962AL m57962l IGBT Driver Power Schematic IGBT DRIVE 50V 300A 600v 20a IGBT driver zener diode 18V 1.5W Mitsubishi Electric IGBT MODULES IGBT 400 amp
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING HYBRID GATE DRIVERS AND GATE DRIVE POWER SUPPLIES 6.0 Using Hybrid Gate Drivers common mode noise immunity. This feature allows convenient common referencing of high and low side control signals. Mitsubishi


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    PDF MJD44H11 D44VH10 MJD45H11 D45VH10 O-220 MJE15030 MJE243 MJE15031 MJE253 IGBT DRIVER SCHEMATIC IGBT DRIVER SCHEMATIC chip M57962AL m57962l IGBT Driver Power Schematic IGBT DRIVE 50V 300A 600v 20a IGBT driver zener diode 18V 1.5W Mitsubishi Electric IGBT MODULES IGBT 400 amp

    Untitled

    Abstract: No abstract text available
    Text: PD - 97406A IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA 100% of The Parts Tested for ILM


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    PDF 7406A IRG7PSH73K10PbF IRFPS37N50A Super-247

    IRG7PSH73K10

    Abstract: IRG7PSH73K10PBF IRG7PSH73 IRFPS37N50A
    Text: PD - 97406A IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • VCES = 1200V C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA 100% of The Parts Tested for ILM


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    PDF 7406A IRG7PSH73K10PbF IRFPS37N50A Super-247 IRG7PSH73K10 IRG7PSH73K10PBF IRG7PSH73 IRFPS37N50A

    IRG7PSH73K10

    Abstract: IRG7PSH73K10PBF IRG7PSH73 SUPER-247
    Text: PD - 97406 IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • VCES = 1200V C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 S short Circuit SOA Square RBSOA 100% of The Parts Tested for ILM


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    PDF IRG7PSH73K10PbF Super-247 IRFPS37N50A Super-247 IRG7PSH73K10 IRG7PSH73K10PBF IRG7PSH73

    Untitled

    Abstract: No abstract text available
    Text: IRGP4790DPbF IRGP4790D-EPbF FOR REVIEW ONLY Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C E G VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4790DPbF TO-247AC


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    PDF IRGP4790DPbF IRGP4790D-EPbF IRGP4790DPbFÂ 247ACÂ IRGP4790Dâ 247ADÂ O-247AD

    Untitled

    Abstract: No abstract text available
    Text: IRGP4790DPbF IRGP4790D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C E G VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4790DPbF TO-247AC E n-channel Applications


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    PDF IRGP4790DPbF IRGP4790D-EPbF IRGP4790DPbFÂ 247ACÂ IRGP4790Dâ 247ADÂ IRGP4790DPbF/IRGP4790D-EPbF O-247AC JESD47F) O-247AD

    PWM 220v ac

    Abstract: bridge rectifier 240V AC 230v dc motor drive circuit diagram 220v DC MOTOR pwm single phase inverter IGBT INVERTER 50 kW Power Module for 5 hp Motor Drives single phase inverter IGBT driver pwm INVERTER 3 phase 400 hz 3 phase rectifier circuit diagram igbt
    Text: PD 6.127 IRPT2064A PRELIMINARY IRPT2064A Power Module for 2 hp Motor Drives • 2 hp 1.5 kW power output Industrial rating at 150% overload for 1 minute · · · · · · · · · · 180-240V AC single-phase input, 50/60 Hz Single-phase rectifier bridge


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    PDF IRPT2064A 80-240V IRPT2064A 80-240V PWM 220v ac bridge rectifier 240V AC 230v dc motor drive circuit diagram 220v DC MOTOR pwm single phase inverter IGBT INVERTER 50 kW Power Module for 5 hp Motor Drives single phase inverter IGBT driver pwm INVERTER 3 phase 400 hz 3 phase rectifier circuit diagram igbt

    schematic diagram induction heating

    Abstract: 3 phase inverter schematic diagram 3 phase 300A inverter schematic diagram 220v 5a diode bridge schematic igbt 220v 1.6A SCHEMATIC 12 to 220v inverter schematic diagram 220v dc motor control dc to ac inverter schematic diagram ac Inverter schematics 10 kw inverter circuit dc to Dc 50V to 220V AC
    Text: PD 6.106 IRPT2059A IRPT2059A PRELIMINARY Power Module for 2 hp Motor Drives • 2 hp 1.5 kW power output Industrial rating at 150% overload for 1 minute · · · · · · · · · · 180-240V AC input, 50/60 Hz 3-phase rectifier bridge 3-phase, short circuit rated, ultrafast IGBT inverter


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    PDF IRPT2059A 80-240V IRPT2059A IRPT2059C 80-240V IRPT2059D schematic diagram induction heating 3 phase inverter schematic diagram 3 phase 300A inverter schematic diagram 220v 5a diode bridge schematic igbt 220v 1.6A SCHEMATIC 12 to 220v inverter schematic diagram 220v dc motor control dc to ac inverter schematic diagram ac Inverter schematics 10 kw inverter circuit dc to Dc 50V to 220V AC

    Untitled

    Abstract: No abstract text available
    Text: IRGP4690DPbF IRGP4690D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 90A, TC = 100°C C C tSC ≥ 5 s, TJ max = 175°C G VCE(on) typ. = 1.70V @ IC = 75A E n-channel Applications • Industrial Motor Drive • Inverters


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    PDF IRGP4690DPbF IRGP4690D-EPbF O-247AD IRGP4690D-EP O-247AC JESD22-A114)

    50w ultrasonic generator 40khz

    Abstract: igbt welding machine scheme 40KHZ ULTRASONIC CLEANER driver CIRCUIT 600V 300A igbt dc to dc boost converter 48v to 230v inverters circuit diagram 3b0565 e-bike motor controller 5V 100w unipolar STEPPER MOTOR 500w inverter pcb board circuit diagram 48V 500w 3 phase BLDC motor controller
    Text: Efficient Semiconductor Solutions for Motor Control and Drives Applications ] www.infineon.com/motorcontrol] Contents Solutions for Motor Control and Drives 04 Low-Voltage Applications 06 High-Voltage Applications 08 Choosing the right Microcontroller 10


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    PDF 98/2000/XP 6ED003L06 SPD04N50C3 IDT08S60 SPA15N60C3 ICE3B0565 XC886 XC878/XE164 XC800 XC878 50w ultrasonic generator 40khz igbt welding machine scheme 40KHZ ULTRASONIC CLEANER driver CIRCUIT 600V 300A igbt dc to dc boost converter 48v to 230v inverters circuit diagram 3b0565 e-bike motor controller 5V 100w unipolar STEPPER MOTOR 500w inverter pcb board circuit diagram 48V 500w 3 phase BLDC motor controller

    Untitled

    Abstract: No abstract text available
    Text: IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C C E G VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4790PbF TO-247AC E n-channel Applications


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    PDF IRGP4790PbF IRGP4790-EPbF IRGP4790PbFÂ 247ACÂ IRGP4790â 247ADÂ IRGP4790PbF/IRGP4790-EPbF O-247AC JESD47F) O-247AD

    Untitled

    Abstract: No abstract text available
    Text: IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C C E G VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4790PbF TO-247AC E n-channel Applications • Industrial Motor Drive


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    PDF IRGP4790PbF IRGP4790-EPbF IRGP4790PbFÂ 247ACÂ IRGP4790â 247ADÂ O-247AD

    Untitled

    Abstract: No abstract text available
    Text: IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V C IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 75A G E G Gate Low VCE(ON) and switching Losses Square RBSOA and Maximum Junction Temperature 175°C


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    PDF IRGP4266PbF IRGP4266-EPbF O-247AC O-247AD

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


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    PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    Untitled

    Abstract: No abstract text available
    Text: IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100°C tSC ≥ 5µs, TJ max = 175°C G G VCE(ON) typ. = 1.65V @ IC = 75A E E G G Gate C Collector Features Benefits High efficiency in a wide range of applications


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    PDF IRGP6690DPbF IRGP6690D-EPbF O-247AD O-247AC IRGP6690DPbF/IRGP6690D-EPbF JESD47F)

    MITSUBISHI CM400

    Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


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    PDF 20kHz MITSUBISHI CM400 MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h

    stanag 3456

    Abstract: ac Inverter schematics 10 kw 30KW Inverter Diagram working principle of an inverter convertisseur dc ac 115v 400 hz 120 degree conduction mode of an inverter Pure sinewave inverter circuit diagram commutation techniques of scr principle block diagram 115v 400hz power single phase dual output inverter with three switch legs
    Text: APPLICATION NOTE APT9601 By: Serge Bontemps Phillipe Cussac Henry Foch Denis Grafham HIGH FREQUENCY RESONANT HALF BRIDGE MOS-Gated Power Semiconductors Configured in the ZVT Thyristor-Dual Mode Yield > 95% Converter Efficiency at 1-10 kW, When Resonantly Switched


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    PDF APT9601 stanag 3456 ac Inverter schematics 10 kw 30KW Inverter Diagram working principle of an inverter convertisseur dc ac 115v 400 hz 120 degree conduction mode of an inverter Pure sinewave inverter circuit diagram commutation techniques of scr principle block diagram 115v 400hz power single phase dual output inverter with three switch legs

    ST T4 3560

    Abstract: T2 AL 250V 150Vt GA600HD25S
    Text: PD - 94341 GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DOUBLE INT-A-Pak Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package


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    PDF GA600HD25S ST T4 3560 T2 AL 250V 150Vt GA600HD25S

    IGBT DRIVE 50V 300A

    Abstract: LTA 902 GA600GD25S AK 1262 igbt "internal thermistor" int-a-pak
    Text: PD -50071B GA600GD25S SINGLE SWITCH IGBT DOUBLE INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package


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    PDF -50071B GA600GD25S Collect52-7105 IGBT DRIVE 50V 300A LTA 902 GA600GD25S AK 1262 igbt "internal thermistor" int-a-pak

    MITSUBISHI CM300

    Abstract: MITSUBISHI CM400 cm1000ha-24h Igbt wafer cm15 300v CM400 CM600HU-24F Mitsubishi Electric IGBT MODULES CM600HA-24H cm300 igbt
    Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 4.1 Structure and Operation of IGBT Module 4.0 Using IGBT Modules Powerex IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


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    PDF 20kHz MITSUBISHI CM300 MITSUBISHI CM400 cm1000ha-24h Igbt wafer cm15 300v CM400 CM600HU-24F Mitsubishi Electric IGBT MODULES CM600HA-24H cm300 igbt

    IRF 902

    Abstract: GA600GD25S CGC SWITCH IGBT DRIVE 50V 300A IGBT 1000A 150V150V
    Text: PD - 50071C GA600GD25S SINGLE SWITCH IGBT DUAL INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package


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    PDF 50071C GA600GD25S Collecto18. IRF 902 GA600GD25S CGC SWITCH IGBT DRIVE 50V 300A IGBT 1000A 150V150V

    GA300TD60U

    Abstract: No abstract text available
    Text: PD -50057D GA300TD60U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


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    PDF -50057D GA300TD60U GA300TD60U