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    IGBT EQUIVALENT TO 40N60 Search Results

    IGBT EQUIVALENT TO 40N60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    IGBT EQUIVALENT TO 40N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    40N60A4D

    Abstract: DIODE 809 200A 40N60A4 Capacitor 400v 80A HGT5A40N60A4D TA49347
    Text: HGT5A40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input


    Original     		PDF HGT5A40N60A4D HGT5A40N60A4D 150oC. TA49347. 40N60A4D DIODE 809 200A 40N60A4 Capacitor 400v 80A TA49347

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    40N60A4D

    Abstract: TA49347 40N60A4 MOSFET 40A 600V HGT5A40N60A4D LD26
    Text: HGT5A40N60A4D Data Sheet February 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input


    Original     		PDF HGT5A40N60A4D HGT5A40N60A4D 150oC. TA49347. 100kHz 200kHz 40N60A4D TA49347 40N60A4 MOSFET 40A 600V LD26

    40N60A4

    Abstract: 40N60A4D MOSFET 40A 600V HGT5A40N60A4D LD26 TA49347 40N60A TO-247ST
    Text: HGT5A40N60A4D Data Sheet February 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input


    Original     		PDF HGT5A40N60A4D HGT5A40N60A4D 150oC. TA49347. 100kHz 200kHz 40N60A4 40N60A4D MOSFET 40A 600V LD26 TA49347 40N60A TO-247ST

    40n60c3

    Abstract: g40n6 RHRP30120 40N60C3R 0n60 TA49049 40N60C RHRP30120 equivalent HGTG40N60C3R LD26
    Text: [ /Title HGT G40N6 0C3R /Subject (75A, 600V, Rugged, UFS Series NChannel IGBT) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power T CT DUC PRO PRODU E T E E L T O U OBS UBSTIT 0C3 6 S N E


    Original     		PDF G40N6 40n60c3 g40n6 RHRP30120 40N60C3R 0n60 TA49049 40N60C RHRP30120 equivalent HGTG40N60C3R LD26

    40N60A4D

    Abstract: 40N60A4 HGTG*N60A4D 40N60A HGT1Y40N60A4D MOSFET 40A 600V HGT5A40N60A4D LD26 TA49347
    Text: HGT5A40N60A4D / HGT1Y40N60A4D Data Sheet May 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D and HGT1Y40N60A4D are MOS gated high voltage switching devices combining the best features of a MOSFET and a bipolar transistor. These


    Original     		PDF HGT5A40N60A4D HGT1Y40N60A4D HGT1Y40N60A4D 150oC. TA49347. 100kHz 200kHz 40N60A4D 40N60A4 HGTG*N60A4D 40N60A MOSFET 40A 600V LD26 TA49347

    mj 1504 transistor equivalent

    Abstract: 40N60A4D mj 1504 transistor HGT1N40N60A4D LD26 SOT227B package 40N60A4 TRANSISTOR mosfet 40A transistor mj 1504
    Text: HGT1N40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input


    Original     		PDF HGT1N40N60A4D HGT1N40N60A4D 150oC. 100kHz mj 1504 transistor equivalent 40N60A4D mj 1504 transistor LD26 SOT227B package 40N60A4 TRANSISTOR mosfet 40A transistor mj 1504

    mj 1504 transistor equivalent

    Abstract: mj 1504 transistor transistor mj 1504 40N60A4 40N60A4D mj 1504 transistor datasheet
    Text: HGT1N40N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the


    Original     		PDF HGT1N40N60A4D HGT1N40N60A4D 150oC. TA49349. 100kHz mj 1504 transistor equivalent mj 1504 transistor transistor mj 1504 40N60A4 40N60A4D mj 1504 transistor datasheet

    40N60A4

    Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347
    Text: HGTG40N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a


    Original     		PDF HGTG40N60A4 HGTG40N60A4 150oC. 100kHz 200kHz 40N60A4 HGT1Y40N60A4D LD26 TA49347

    40N60A4

    Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347
    Text: HGTG40N60A4 TM Data Sheet April 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance


    Original     		PDF HGTG40N60A4 HGTG40N60A4 150oC. 100kHz 200kHz 40N60A4 HGT1Y40N60A4D LD26 TA49347

    mj 1504 transistor equivalent

    Abstract: 40N60A4D transistor mj 1504 mj 1504 transistor 40N60A4 HGT1N40N60A4D tsc 429 transistors mj 1504 LD26 of mj 1504 transistor
    Text: HGT1N40N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the


    Original     		PDF HGT1N40N60A4D HGT1N40N60A4D 150oC. 100kHz mj 1504 transistor equivalent 40N60A4D transistor mj 1504 mj 1504 transistor 40N60A4 tsc 429 transistors mj 1504 LD26 of mj 1504 transistor

    HGTG40N60A4

    Abstract: IGBTs 40N60A4 HGT1Y40N60A4D LD26 TA49347
    Text: HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance


    Original     		PDF HGTG40N60A4 HGTG40N60A4 150oC. 100kHz 200kHz IGBTs 40N60A4 HGT1Y40N60A4D LD26 TA49347

    40N60A4

    Abstract: HGTG40N60A4 MOSFET 40A 600V TA49347 HGT1Y40N60A4D LD26
    Text: HGTG40N60A4 Data Sheet April 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance


    Original     		PDF HGTG40N60A4 HGTG40N60A4 150oC. 100kHz 200kHz 40N60A4 MOSFET 40A 600V TA49347 HGT1Y40N60A4D LD26

    40n60c3

    Abstract: 40n60 40N60C3R HGTG40N60C3R LD26 RHRP30120
    Text: HGTG40N60C3R Semiconductor 75A, 600V, Rugged, UFS Series N-Channel IGBT May 1997 Features Description • 75A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices


    Original     		PDF HGTG40N60C3R 150oC 170ns 40n60c3 40n60 40N60C3R HGTG40N60C3R LD26 RHRP30120

    40n60c3

    Abstract: 40N60C3R RHRP30120 HGTG40N60C3R LD26 40n60
    Text: HGTG40N60C3R S E M I C O N D U C T O R 75A, 600V, Rugged, UFS Series N-Channel IGBT May 1997 Features Description • 75A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    Original     		PDF HGTG40N60C3R 150oC 170ns 1-800-4-HARRIS 40n60c3 40N60C3R RHRP30120 HGTG40N60C3R LD26 40n60

    din IEC 68

    Abstract: 150a gto GTO 100A IXYS 40N60A D-68623 DWEP 17-12 DWEP DWlP 2580B L 7CG
    Text: Contents Page Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types


    Original     		PDF

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


    Original     		PDF O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


    OCR Scan     		PDF ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q

    G40N60

    Abstract: g40n60b3 g40n60b HGTG40N60B3 equivalent TSC900 TA49052 C110 HGTG40N60B3 LD26 110CI
    Text: in t e HGTG40N60B3 r r ii J a n u a ry . D ata S h eet m 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    OCR Scan     		PDF HGTG40N60B3 HGTG40N60B3 TA49052. O-247 G40N60 g40n60b3 g40n60b HGTG40N60B3 equivalent TSC900 TA49052 C110 LD26 110CI