Untitled
Abstract: No abstract text available
Text: 6MBP75RA120 1200V / 75A 6 in one-package IGBT-IPM R series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · Compatible with existing IPM-N series packages · High performance and high reliability IGBT with overheating protection
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6MBP75RA120
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6MBP75RA120
Abstract: fuji 3 kV IGBT
Text: 6MBP75RA120 1200V / 75A 6 in one-package IGBT-IPM R series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · Compatible with existing IPM-N series packages · High performance and high reliability IGBT with overheating protection
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6MBP75RA120
6MBP75RA120
fuji 3 kV IGBT
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7MBP75TEA
Abstract: No abstract text available
Text: 7MBP75TEA060 600V / 75A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
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7MBP75TEA060
7MBP75TEA
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7MBP75TEA060
Abstract: AC200V AC2500
Text: 7MBP75TEA060 600V / 75A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
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7MBP75TEA060
7MBP75TEA060
AC200V
AC2500
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Untitled
Abstract: No abstract text available
Text: 7MBP75TEA060 600V / 75A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
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7MBP75TEA060
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FF400R17KF6CB2
Abstract: IGBT FF 300 igbt ff 75 r
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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FF400R17KF6CB2
FF400R17KF6CB2
IGBT FF 300
igbt ff 75 r
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Untitled
Abstract: No abstract text available
Text: 6MBP75TEA060 600V / 75A 6 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
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6MBP75TEA060
curr5TEA060
trr125
Irr125
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Untitled
Abstract: No abstract text available
Text: 6MBP75TEA060 600V / 75A 6 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection
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6MBP75TEA060
AC2500
trr125
Irr125
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IGBT FF 300
Abstract: diode 1700v eupec igbt FF400R17KF6CB2 KF6C
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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6MBP50RA120
Abstract: IGBT 6MBP50RA120
Text: 6MBP50RA120 1200V / 50A 6 in one-package IGBT-IPM R series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · Compatible with existing IPM-N series packages · High performance and high reliability IGBT with overheating protection
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6MBP50RA120
6MBP50RA120
IGBT 6MBP50RA120
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FZ 77 1000
Abstract: IGBT FZ 1200 FZ 77 FF R 1200 FZ200
Text: IGBT modules VcES IC R M lc v CEsal to n ts tf R th J C Wj ' l l i • DC V A '• i * 2 5 °C . ty p t., = 2 5 °C , ty p 'v, 2 5 °C , ly p p e r a rm V us us MS ° C /W °c tp = 1 ms •vi = 2 5 °C A ty p Dual modules FF 15 R 12 KF 1200 15 30 3 0.4 0.5
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2MB150N-060
Abstract: 2mb175n-060 2mb1300n-060 2mb1200n-060 P607 IGBT 400 amp 150 VOLT 10 AMP IGBT circuit 2mb175n 2mb1150 2mb1200n 120
Text: Hl B2 3Ö7 TE OOQB' ns 7MO • THIRD GENERATION IGBT I Low Saturation Voltage ■ Short Circuit Limiting ■ Low Switching Losses ■ Square RBSOA ■ Less Total Power Dissipation ■ Minimized Internal Stray Inductance 600 VOLT, N-SERIES SINGLE MODULES • 400 & 600 Amp
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1MBI400NB-060
1MBI600NN-060
1MBI600NP-060
7MBI75N-060
7MBI100N-060
7MBR30NF060
7MBR50NF060
2MB150N-060
2mb175n-060
2mb1300n-060
2mb1200n-060
P607
IGBT 400 amp
150 VOLT 10 AMP IGBT circuit
2mb175n
2mb1150
2mb1200n 120
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Untitled
Abstract: No abstract text available
Text: APT50GF120B2R APT50GF120LR 1200V 80A A dvanced P o w er Te c h n o l o g y APT50GF120B2R Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.
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APT50GF120B2R
APT50GF120LR
APT50GF120B2R
20KHz
APT50GF120LR
APT50GF120B2R/LR
MIL-STD-750
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24v 125A IGBT
Abstract: No abstract text available
Text: s e M IK R O n AC, 1min Operating / stor. tem perature c/ —I vV jso l 4) S’ Conditions1’ o Symbol o— I SKiiP 3-phase bridge Absolute Maximum Ratings Values Units 3000 V -25.+85 °c 1200 V V A IGBT and Inverse Diode VcES Operating DC link voltage
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MGP20N
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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MGP20N60U/D
MGP20N60
O-220
21A-09
O-22QAB
MGP20N
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IGBT FF 450
Abstract: tca600
Text: • IGBT MODULES<TRENCH GATE Max. ratings Type No. V ces CM600HA-5F CM350DU-5F ★* lc fWQ: secfio Pc Tj IGBT sections s WOrsseBons lE vœ fts) (/*&) 3.9 1.4 o c (V) (ns) 2.0 300 o A j CAÌ ÎW) fc ) (A) 250 ; 450 735 150 450 1.7 250 t 600 960 150 600
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CM450HA-5F
CM600HA-5F
CM350DU-5F
CM600HU>
CM300DU-12H
CM400DU-12H
CM75TU-12H
CM100TU-12H
CM150TU-12H
CM200TU-12H
IGBT FF 450
tca600
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14N60E
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M GW 14N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 14N 60ED Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged
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14N60ED/D
14N60E
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GA75TS60U
Abstract: No abstract text available
Text: International I«R Rectifier PD -5.050B PR E LIM IN A R Y "HALF-BRIDGE” IGBT INT-A-PAK GA75TS60U Ultra-Fast Speed IGBT F eatu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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GA75TS60U
GA75TS60U
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SK4100
Abstract: No abstract text available
Text: V i» * * :» J ;j i\l t ! Y , HAL= , , '_^-o l.J B R ID G E >OWEh< u i U O t H Y B R ID 4100 8170 Thompson Road Cícera N.Y. 13039 > MIL-STD-1772 CERTIFIED FEATURES: • • • • • • • 315) 689-9201 600V, 30 Amp Capability Ultra Low Thermal Resistance - Junction to Casa - 0.5°C/W
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MIL-STD-1772
MSK4100
MSK4100B
SK4100
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Untitled
Abstract: No abstract text available
Text: APT50GF60BR A dvanced P o w er Te c h n o l o g y 600V 75A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.
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APT50GF60BR
20KHz
F-33700
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PM75RHA060
Abstract: 2 anode igbt inverter circuit diagram 24 volt dc to 230 volt ac inverter 72T4 BP107 220 Volt dc to ac ups circuit diagram
Text: PO 111ER EX INC _ SIE D • 7 2 R 4 b2 1 O O O S b ^ b T7M H P R X PM 75RHA060 T * 5 7 -2 J Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 ln tB llim O C f^ ^ -3 M o d u l u s Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 j ^ re e phase + Brake
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72R4b21
PM75RHA060
BP107,
Amperes/110-230
PM75RHA060
2 anode igbt inverter circuit diagram
24 volt dc to 230 volt ac inverter
72T4
BP107
220 Volt dc to ac ups circuit diagram
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IRGKI120F06
Abstract: No abstract text available
Text: International I ®]Rectifier PD-9.966C IRGKI120F06 "CHOPPER" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all "tail” losses
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10KHz
50KHz
IRGKI120F06
C-175
554S2
C-176
IRGKI120F06
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N60E
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP21 N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP21N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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MGP21
N60E/D
MGP21N60ED
N60E
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Untitled
Abstract: No abstract text available
Text: International ìor!Rectifier PD - 5.031 CPV362MM Short Circuit Rated Fast IGBT IGBT SIP MODULE Features • Short Circuit Rated - 1 0^is @ 125°C, V ge = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses
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CPV362MM
10kHz)
360Vdc
C-416
4A55452
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