IGBT FOR INDUCTION HEATING Search Results
IGBT FOR INDUCTION HEATING Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
GCM31CD70J226KE02L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for Automotive |
![]() |
||
GRM022C81C682KE01L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
![]() |
||
GRM033D70J224KE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
![]() |
||
GRM155D71A475ME15J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
![]() |
||
GRM2195C2A273GE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
![]() |
IGBT FOR INDUCTION HEATING Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: Product Overview NGTB30N60IHLWG: IGBT 600V 30A Induction Heating For complete documentation, see the data sheet Product Description This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides |
Original |
NGTB30N60IHLWG: NGTB30N60IHLWG O-247-3 | |
FGL40N120AND
Abstract: 100W UPS FGL40N120AN IH 001
|
Original |
FGL40N120AN O-264 FGL40N120AND FGL40N120AND 100W UPS FGL40N120AN IH 001 | |
Contextual Info: IGBT FGL40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor |
Original |
FGL40N120AN FGL40N120AN O-264 | |
Contextual Info: IGBT FGH40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor |
Original |
FGH40N120AN FGH40N120AN | |
RJH1CF5RDPQ-80Contextual Info: Preliminary Datasheet RJH1CF5RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0355EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating |
Original |
RJH1CF5RDPQ-80 R07DS0355EJ0100 PRSS0003ZE-A O-247) RJH1CF5RDPQ-80 | |
fgh80n60
Abstract: FGH80N60FDTU FGH80N60FD
|
Original |
FGH80N60FD FGH80N60FD fgh80n60 FGH80N60FDTU | |
FAIRCHILD FGL40N120AN
Abstract: FGL40N120AN
|
Original |
FGL40N120AN O-264 FAIRCHILD FGL40N120AN FGL40N120AN | |
rjh1cf7
Abstract: single and gate ic number RJH1CF7RDPQ-80 RJH1CF7RDPQ-80#T2
|
Original |
RJH1CF7RDPQ-80 R07DS0357EJ0100 PRSS0003ZE-A O-247) rjh1cf7 single and gate ic number RJH1CF7RDPQ-80 RJH1CF7RDPQ-80#T2 | |
Silicon N Channel IGBT High Speed Power Switching
Abstract: RJH1CF4RDPQ-80
|
Original |
RJH1CF4RDPQ-80 R07DS0354EJ0100 PRSS0003ZE-A O-247) Silicon N Channel IGBT High Speed Power Switching RJH1CF4RDPQ-80 | |
Contextual Info: Preliminary Datasheet RJH1CF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0356EJ0100 Rev.1.00 May 12, 2010 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating |
Original |
RJH1CF6RDPQ-80 R07DS0356EJ0100 PRSS0003ZE-A O-247) | |
FGH80N60FD2TU
Abstract: FGH80N60FD2 fgh80n60
|
Original |
FGH80N60FD2 FGH80N60FD2 FGH80N60FD2TU fgh80n60 | |
Contextual Info: FGH80N60FD2 600 V Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild's field stop IGBTs offer the optimum performance for induction heating and PFC applications where low conduction and switching losses |
Original |
FGH80N60FD2 | |
Contextual Info: FGH80N60FD 600 V Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild's field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and |
Original |
FGH80N60FD | |
Contextual Info: Preliminary Datasheet RJH1CF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0356EJ0100 Rev.1.00 May 12, 2010 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating |
Original |
RJH1CF6RDPQ-80 R07DS0356EJ0100 PRSS0003ZE-A O-247) | |
|
|||
fgh80n60
Abstract: FGH80N60FD2TU FGH80N60FD fairchild igbt to247
|
Original |
FGH80N60FD2 FGH80N60FD2 fgh80n60 FGH80N60FD2TU FGH80N60FD fairchild igbt to247 | |
TF-600Contextual Info: Preliminary Datasheet RJH1DF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0413EJ0100 Rev.1.00 May 18, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating |
Original |
RJH1DF7RDPQ-80 R07DS0413EJ0100 PRSS0003ZE-A O-247) TF-600 | |
rjh1bf7Contextual Info: Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0394EJ0100 Rev.1.00 May 16, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating |
Original |
RJH1BF7RDPQ-80 R07DS0394EJ0100 PRSS0003ZE-A O-247) rjh1bf7 | |
fgh80n60
Abstract: FGH80N60FD FGH80N60FDTU 247A03 fairchild igbt to247
|
Original |
FGH80N60FD FGH80N60FD fgh80n60 FGH80N60FDTU 247A03 fairchild igbt to247 | |
FGH40N60SFD
Abstract: FGH40N60SFDTU IGBT 40A igbt 400V 40A CY8C21434-24LTXI FGH40N60
|
Original |
FGH40N60SFD 100oC FGH40N60SFD FGH40N60SFDTU IGBT 40A igbt 400V 40A CY8C21434-24LTXI FGH40N60 | |
FGH75N60SFTU
Abstract: fgh75n60 DEVICE MARKING CODE 150A FGH75N60SF
|
Original |
FGH75N60SF 100oC FGH75N60SF FGH75N60SFTU fgh75n60 DEVICE MARKING CODE 150A | |
fgh80n60
Abstract: igbt 40a 600v FGH80N60FD FGH80N60FDTU
|
Original |
FGH80N60FD FGH80N60FD fgh80n60 igbt 40a 600v FGH80N60FDTU | |
rjh1bf7Contextual Info: Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0394EJ0100 Rev.1.00 May 16, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating |
Original |
RJH1BF7RDPQ-80 R07DS0394EJ0100 PRSS0003ZE-A O-247) rjh1bf7 | |
SGL40N150Contextual Info: IGBT SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. SGL40N150 is designed for the Induction Heating applications. • High Speed Switching • Low Saturation Voltage : VCE(sat) = 3.7 V @ IC = 40A |
Original |
SGL40N150 SGL40N150 O-264 | |
FGL40N120
Abstract: FGL40N120ANTU FAIRCHILD FGL40N120AN
|
Original |
FGL40N120AN FGL40N120AN O-264 FGL40N120ANTU FGL40N120 FAIRCHILD FGL40N120AN |