IGBT FW DIODE 1200V Search Results

Contextual Info: MITSUBISHI IGBT MODULES CM100E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di­

Contextual Info: MITSUBISHI IGBT MODULES CM50E3U-24H MEDIUM POWER SWITCHING USE INSULATED TYPE T q Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di­

CM75E3U-24H

Abstract: Mitsubishi Electric IGBT MODULES IGBT die mitsubishi MITSUBISHI IGBT VQE21 mitsubishi electric igbt module
Contextual Info: MITSUBISHI IGBT MODULES CM75E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di­

Contextual Info: MITSUBISHI IGBT MODULES CM50E3U-24H MEDIUM POWER SWITCHING USE INSULATED TYPE T q Measured Description: M itsubishi IGBT M odules are de­ signed fo r use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected s u pe r-fa st recovery free-w heel di­

Contextual Info: MITSUBISHI IGBT MODULES CM100DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

100E3U-24H

Contextual Info: MITSUBISHI IGBT MODULES CM100E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are d e ­ signed fo r use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected s u pe r-fa st recovery free-w heel di­

Contextual Info: MITSUBISHI IGBT MODULES CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

FW 3.7

Contextual Info: MITSUBISHI IGBT MODULES CM75E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are d e ­ signed fo r use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected s u pe r-fa st recovery free-w heel di­

IRGRDN400M12

Abstract: LF400A
Contextual Info: Provisional Data Sheet PD-9.1204 IRGDDN400M12 ir g r d n 4Q0M12 goRjHecnner "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VŒ = 1200V lc = 400A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all “tail" losses •Short circuit rated

Contextual Info: MITSUBISHI IGBT MODULES CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE . . Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of one IGBT in a single configuration with a reverse-connected super­

Contextual Info: MITSUBISHI IGBT MODULES CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a p p li­ cations. Each m odule consists of one IGBT in a single configuration w ith a reverse-connected s u pe r­

Contextual Info: MITSUBISHI IGBT MODULES CM300HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura­ tion with a reverse-connected su­ per-fast recovery free-wheel diode.

igbt 400A, 1200V mitsubishi

Contextual Info: MITSUBISHI IGBT MODULES CM400HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching applications. Each m odule consists of one IGBT in a single co nfig ura ­ tion w ith a reverse-connected super-fast recovery free-w heel diode.

CRD Diode B

Contextual Info: International ^Rectifier PM1161 IRGKIN075M12 "CHOPPER LOW SIDE SWITCH" IGBTINT-A-PAK Low conduction loss IGBT Low Side Switch V CE= 1200V lc = 7 5 A • Rugged Design •Simple gate-drive •Switching-Loss Rating Includes all "tail" losses •Short circuit rated

Contextual Info: MITSUBISHI IGBT MODULES CM600HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura­ tion with a reverse-connected su­ per-fast recovery free-wheel diode.

Contextual Info: MITSUBISHI IGBT MODULES CM200HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module con­ sists of one IGBT in a single con­ figuration with a reverseconnected super-fast recovery

Contextual Info: MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

Contextual Info: MITSUBISHI IGBT MODULES CM75DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of two IGBTs in a half bridge configu­ ration with each transistor having

diod m4

Contextual Info: MITSUBISHI IGBT MODULES CM300HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching a pplications. Each m odule consists of one IGBT in a single co nfig ura ­ tion w ith a reverse-connected super-fast recovery free-w heel diode.

7MBP50TEA120

Abstract: AC200V AC2500 zener diode 5v with reverse recovery time 1us
Contextual Info: 7MBP50TEA120 1200V / 50A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection

Contextual Info: MITSUBISHI IGBT MODULES CM100TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor

diode bridge LT 402

Contextual Info: MITSUBISHI IGBT MODULES CM100TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a p p li­ cations. Each m odule consists of six IGBTs in a three phase bridge configuration, w ith each tran sistor

Contextual Info: MITSUBISHI IGBT MODULES CM75TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of six IGBTs in a three phase bridge con­ figuration, with each transistor hav­

Contextual Info: MITSUBISHI IGBT MODULES CM600HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching applications. Each m odule consists of one IGBT in a single co n fig u ra ­ tion w ith a reverse-connected super-fast recovery free-w heel diode.