IGBT HITACHI Search Results

igbt inverter welder schematic

Abstract: inverter welder schematic diagram inverter welder schematic inverter welder schematic 1 phase using igbt inverter welder schematic 1 phase MBM300GS12A inverter welder 4 schematic hitachi igbt TOSHIBA IGBT snubber igbt testing procedure
Contextual Info: Ref.No. IGBT-01 Rev.2 Hitachi, Ltd. Power & Industrial Systems Power Semiconductor Dept. Power & Industrial Systems Div. Hitachi IGBT Module Application Manual 1 Introduction to Hitachi IGBT Modules This application manual references specifications of the GS Series AW Version of Hitachi Insulated

Contextual Info: Power Type Hitachi presents a new IGBT module, 1,700V/2,000V/2,500V/3,300V up to 1,800A. The new IGBT module makes possible higher efficiency and quieter operation of inverters. Features • • • • High thermal fatigue durability High speed and low loss IGBT module

MBM300GR12

Abstract: IGBT-SP-99025 PC171
Contextual Info: Spec. No. IGBT-SP-99025 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBM300GR12 [Rated 300A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.

mbm150gr12

Contextual Info: Spec. No. IGBT-SP-99023 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBM150GR12 [Rated 150A/1200V, Dual-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.

IGBT-SP-99026

Abstract: 99026 ETON MBN400GR12
Contextual Info: Spec. No. IGBT-SP-99026 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBN400GR12 [Rated 400A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.

MBM200GR12

Abstract: IGBT-SP-99024 Hitachi DSA00110
Contextual Info: Spec. No. IGBT-SP-99024 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12 [Rated 200A/1200V, Dual-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.

Contextual Info: Spec. No. IGBT-SP-99022 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBM100GR12 [Rated 100A/1200V, Dual-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.

MBM400GR6

Abstract: PDE-M400GR6-0 Hitachi DSA0047 99016
Contextual Info: Spec. No. IGBT-SP-99016 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBM400GR6 [Rated 400A/600V, Dual-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.

Microwave Oven Inverter Control IC

Abstract: igbt inverter schematics inverter circuit schematics ON607 UPS schematics igbt drive schematics GN12030E IGBT Hitachi 6015-a GN5020C
Contextual Info: 21 2.4 IGBT Circuit Schematics To meet a wide range of user needs, Hitachi has devices with the following schematics. IGBT Circuit Schematics MODULES DISCRETE Single-arm Single-phase dual pack Three-phase (six pack) C1 h ,~ J à C G1 E1/C2 G2 I E E2 2.5 IGBT Discrete Range

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES  High speed low loss IGBT. Low-injection punch-through IGBT.  Low driving power due to low input capacitance MOS gate.  High speed low recovery loss diode.

MBN600GR12

Abstract: IGBT-SP-99034 IGBT 600V 600A
Contextual Info: Spec. No. IGBT-SP-99034 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBN600GR12 [Rated 600A/1200V, Single-pack type] FEATURES OUTLINE DRAWING Unit in mm 110 93 4-φ6.5 2-M8 E C E 80 62 40 • Low saturation voltage and high speed. · Low turn-OFF switching loss.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-12026 R1 MBN1200F33F Target Specification Silicon N-channel IGBT 3300V F version FEATURES  Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Fine Trench High conductivity IGBT.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-12026 R4 P1 MBN1200F33F Preliminary Specification Silicon N-channel IGBT 3300V F version FEATURES ∗ Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity IGBT.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-13008 R2 P1 MBN1800F33F Target Specification Silicon N-channel IGBT 3300V F version FEATURES  Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity IGBT.

Contextual Info: Dual IGBT Module Spec.No.IGBT-SP-10006-R4 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.

Hitachi DSA00281

Abstract: MBN800
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10014 R0 MBN800H45E2 Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-05004 R7 MBN1200E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.

MBN1500E33E2

Abstract: ls290 MBN1500E33E nff 16-102 IC1500 GC 72
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.

shin-etsu g747

Abstract: silicon thermal grease g747
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08038 R1 MBL800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.

Hitachi DSA00281

Abstract: 330nf 250 v
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.

corrosion inhibitor

Abstract: Hitachi DSA00281
Contextual Info: Dual IGBT Module Spec.No.IGBT-SP-10006-R2 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08006 R3 MBN1000E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10002 R5 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.

silicon thermal grease g747

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08038 R1 MBL800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.