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    IGBT IGNITION Search Results

    IGBT IGNITION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J122A
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30J121
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT50J123
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 59 A, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT20J121
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    GT40J322
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 40 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    IGBT IGNITION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RURU8060

    Abstract: 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor
    Contextual Info: IGBT and Rectifier Selection Guide February 2002 Discrete IGBTs 1 Automotive Ignition IGBTs 6 IGBT Smart Power Modules SPM 7 IGBT Modules 8 HyperFast/UltraSoft Recovery Rectifiers (Stealth Family) 9 HyperFast Recovery Rectifiers 10 UltraFast Recovery Rectifiers


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    FGS15N40L OT-227 HGT1N30N60A4D HGT1N40N60A4D O-220 HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 RURU8060 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N35CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)


    OCR Scan
    MGP20N35CL -220A PDF

    GP20N

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Cltannel IGBT MGP20N40CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 400 VOLTS (CLAMPED) T his Logic Level Insulated G ate Bipolar Transistor (IGBT)


    OCR Scan
    MGP20N40CL 21A-09 O-220AB GP20N PDF

    8201NG

    Abstract: 8201n NGD 8201NG NGD8201NG NGD8201N NGD8201NT4 NGD8201NT4G
    Contextual Info: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGD8201N NGD8201N/D 8201NG 8201n NGD 8201NG NGD8201NG NGD8201N NGD8201NT4 NGD8201NT4G PDF

    8204NG

    Abstract: GB8204N NGB8204N NGB8204NT4 NGB8204NT4G
    Contextual Info: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGB8204N NGB8204N/D 8204NG GB8204N NGB8204N NGB8204NT4 NGB8204NT4G PDF

    8205NG

    Abstract: NGD 8205NG NGD8205N NGD8205NT4 NGD8205NT4G
    Contextual Info: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGD8205N NGD8205N/D 8205NG NGD 8205NG NGD8205N NGD8205NT4 NGD8205NT4G PDF

    B8204

    Abstract: NGB8204N NGB8204NT4
    Contextual Info: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGB8204N NGB8204N/D B8204 NGB8204N NGB8204NT4 PDF

    8201NG

    Abstract: NGD 8201NG NGD8201NG 8201n NGD8201NT4G NGD8201N NGD8201NT4
    Contextual Info: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGD8201N NGD8201N/D 8201NG NGD 8201NG NGD8201NG 8201n NGD8201NT4G NGD8201N NGD8201NT4 PDF

    MGP20N40CL

    Abstract: NT 407 F TRANSISTOR TO 220 MGP20N40CL-D
    Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)


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    MGP20N40CL/D MGP20N40CL MGP20N40CL/D* MGP20N40CL NT 407 F TRANSISTOR TO 220 MGP20N40CL-D PDF

    8245NG

    Contextual Info: NGB8245N Ignition IGBT 20 Amp, 450 Volt, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGB8245N NGB8245N/D 8245NG PDF

    NT 407 F TRANSISTOR TO 220

    Abstract: MOTOROLA TRANSISTOR T2 NT 407 F MOSFET TRANSISTOR MGP20N40CL 632 transistor motorola mosfet ignition coil NT 407 F TRANSISTOR
    Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)


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    MGP20N40CL/D MGP20N40CL NT 407 F TRANSISTOR TO 220 MOTOROLA TRANSISTOR T2 NT 407 F MOSFET TRANSISTOR MGP20N40CL 632 transistor motorola mosfet ignition coil NT 407 F TRANSISTOR PDF

    NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F power transistor mosfet 407 MGP20N14CL MOTOROLA TRANSISTOR TO-220
    Contextual Info: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)


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    MGP20N14CL/D MGP20N14CL MGP20N14CL/D* NT 407 F TRANSISTOR TO 220 NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F power transistor mosfet 407 MGP20N14CL MOTOROLA TRANSISTOR TO-220 PDF

    MGP20N40CL

    Abstract: NT 407 F power transistor NT 407 F TRANSISTOR TO 220
    Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)


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    MGP20N40CL/D MGP20N40CL MGP20N40CL NT 407 F power transistor NT 407 F TRANSISTOR TO 220 PDF

    NT 407 F TRANSISTOR TO 220

    Abstract: 108 motorola transistor NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR motorola mosfet 632 transistor motorola 221A-09 MOTOROLA TRANSISTOR MGP20N14CL motorola transistor ignition
    Contextual Info: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N14CL 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)


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    MGP20N14CL/D MGP20N14CL NT 407 F TRANSISTOR TO 220 108 motorola transistor NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR motorola mosfet 632 transistor motorola 221A-09 MOTOROLA TRANSISTOR MGP20N14CL motorola transistor ignition PDF

    NGD 8205NG

    Abstract: 8205NG NGD8205N NGD8205NT4 NGD8205NT4G
    Contextual Info: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGD8205N NGD8205N/D NGD 8205NG 8205NG NGD8205N NGD8205NT4 NGD8205NT4G PDF

    0005P

    Abstract: 350VVGE
    Contextual Info: NGB8204N Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGB8204N NGB8204N/D 0005P 350VVGE PDF

    NGB8202NT4G

    Abstract: NGB8202AN NGB8202ANT4G NGB8202N NGB8202A
    Contextual Info: NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGB8202N, NGB8202AN NGB8202N/D NGB8202NT4G NGB8202AN NGB8202ANT4G NGB8202N NGB8202A PDF

    18n40b

    Abstract: GB18N40B NGB18N40CLB NGB18N40CLBT4 NGB18N40CLBT4/D
    Contextual Info: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGB18N40CLBT4 NGB18N40CLB/D 18n40b GB18N40B NGB18N40CLB NGB18N40CLBT4 NGB18N40CLBT4/D PDF

    8201N

    Abstract: NGD8201N NGD8201NT4
    Contextual Info: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGD8201N NGD8201N/D 8201N NGD8201N NGD8201NT4 PDF

    B8202N

    Abstract: B8202 B8-202 Direct fuel injection ignition IGBT GB8202N
    Contextual Info: NGB8202N Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGB8202N B8202N B8202 B8-202 Direct fuel injection ignition IGBT GB8202N PDF

    N40B

    Abstract: G18N40B g18n40
    Contextual Info: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGD18N40CLBT4 NGD18N40CLB/D N40B G18N40B g18n40 PDF

    NGD8205AN

    Abstract: NGD8205A
    Contextual Info: NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGD8205N, NGD8205AN NGD8205N/D NGD8205A PDF

    NGD8201N

    Abstract: 8201x NGD8201AN 8201xg NGD8201ANT4G
    Contextual Info: NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGD8201N, NGD8201AN NGD8201N/D NGD8201N 8201x 8201xg NGD8201ANT4G PDF

    Contextual Info: NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGB8202N, NGB8202AN NGB8202N/D PDF