IGBT K 40 T 2002 Search Results

IGBT K 40 T 2002 Result Highlights (5)

Part	Manufacturer	Description
GT50J123	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)
GT20J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS
GT30J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)
GT30J122A	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)
GT20N135SRA	Toshiba Electronic Devices & Storage Corporation	IGBT, 1350 V, 40 A, Built-in Diodes, TO-247

IGBT K 40 T 2002 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CM600HG-130H Abstract: HCM-1002-H high voltage igbt Contextual Info: SECURITY CODE A Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION S.Iura F S.Iura G S.Iura R H.Yamaguchi I.Umezaki I.Umezaki E M.Yamamoto H.Yamaguchi H.Yamaguchi V 7-Oct.-2002 18-May-2004 20-May-2004	Original	18-May-2004 20-May-2004 CM600HG-130H HCM-1002-H 10-Dec 22-Jan 26-Jan 17-May-2004 CM600HG-130H HCM-1002-H high voltage igbt	PDF
schematic diagram inverter air conditioner Abstract: schematic diagram for inverter air conditioner injection molding machine wire diagram schematic diagram washing machines PS21246-E air conditioner schematic diagram schematic diagram Refrigerators coin washing machine application of microprocessor in washing machine fab15 Contextual Info: IEEE INDUSTRY APPLICATIONS MAGAZINE • JULY\|AUG. 2002 • WWW.IEEE.ORG/IAS HYBRID POWER MODULES utilize a unique INJECTION-MOLDED LEAD-FRAME DESIGN and provide cost-effective integration of power devices, gate drive, and protection. 26 HE USE OF INVERTERS IN APPLI-	Original		PDF
T0360NA25A Abstract: D-68623 T0360 TX031NA25A Contextual Info: WESTCODE Date:- 28 Aug, 2002 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Bi-Polar Gate Transistor Type T0360NA25A Development Type Number: TX031NA25A Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE RATINGS UNITS VCES Collector – emitter voltage	Original	T0360NA25A TX031NA25A) T0360NA25A D-68623 T0360 TX031NA25A	PDF
IC 0001 SPMS Abstract: curve tracer equipment heat sink design guide, IGBT calculation of IGBT snubber Power PCB Relays FPAL20SM60-IGBT INVERTER 10kW mosfet 5kw high power rf spms 12 volt 1N4937 Contextual Info: Application Note 9018 May, 2002 Smart Power Module User’s Guide 8.Bootstrap Circuit 8.1 Operation of a Bootstrap Circuit The VBS voltage, which is the voltage difference between VB SPM pins 20, 25 and 29 and VS (SPM pins 21, 26 and 30), provides the supply to the HVICs within the SPM. This supply must	Original		PDF
4kw inverter diagram Abstract: IGBT power loss inverter Controller PWM 3kw FSAM15SH60 curve tracer equipment obsolete ic cross reference 3kw inverter CSP15 IGBT JUNCTION TEMPERATURE CALCULATION 3 phase inverter 120 conduction mode waveform Contextual Info: Application Note 9021 May, 2002 A Novel IGBT Inverter Module for Low-Power Drive Applications By M.K Kim, K.Y Jang, B.H Choo, J.B Lee, B.S Suh, T.H Kim Abstract - This paper presents a novel 3-phase IGBT module called the SPM Smart Power Module . This is a new design developed to provide a very compact, low cost, high performance and reliable motor drive system. Several distinct design concepts were used to achieve	Original		PDF
full bridge igbt induction heating generator Abstract: transistor x112 WESTCODE catalog 100-12E8 2-IAO-QMC-01001 IGBT ac switch in SSR IGBT D-Series IGCT 4.5kv ixys vuo 52 input id MITA15WB1200TMH Contextual Info: P R O D U C T S E L E C T O R G U I D E IGBT & Rectifier Modules M A Y 2 0 0 7 Selector Guide incl.: Product Overview Tables Application Overview Technology Overview MiniPack 2 NEW Press-Pack IGBTs POWER DEVICES Power MOSFET Discreets RF Power MOSFETs IGBT Discreets	Original		PDF
M7 diode vishay Contextual Info: 100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES • Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Integrated thermistor • Isolated baseplate • Compliant to RoHS Directive 2002/95/EC • Very low stray inductance design for high speed operation	Original	100MT060WDF 2002/95/EC 11-Mar-11 M7 diode vishay	PDF
X4612 Contextual Info: 100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES • Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Integrated thermistor • Isolated baseplate • Compliant to RoHS Directive 2002/95/EC • Very low stray inductance design for high speed operation	Original	100MT060WDF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 X4612	PDF
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312	PDF
circuit diagram of 5kw smps full bridge Abstract: TJM 10 earth fault relay SCK 054 VARISTOR TMS320F2406 SCHEMATIC 10kw POWER SUPPLY WITH IGBTS SCHEMATIC 5kw power supply 30A thermistor SCK 054 5kw inverter schematic TJM 11 earth fault relay 5kw smps full bridge S.M.P.S Contextual Info: Application Note 9018 May, 2002 Smart Power Module User’s Guide CONTENTS 1. Introduction .3 2. SPM-Inverter System Overview .4	Original		PDF
TRANSISTOR 1pz Abstract: igbt die 1200V trench npt The field stop IGBT FS IGBT 50-DEGREE CSTBT igbt igbt testing procedure Contextual Info: Characterization and Modeling of the LPT CSTBT  the 5th Generation IGBT X. Kang, L. Lu, X. Wang, E. Santi, J.L. Hudgins, P.R. Palmer, J.F. Donlon Department of Electrical Engineering University of South Carolina Columbia, SC 29208, USA santi@engr.sc.edu	Original		PDF
UC3842 smps design with TL431 Abstract: MC34063 Boost MOSFET mc34063 step down with mosfet computer schematic power supply circuit diagram circuit diagram of mosfet based smps power supply smps with uc3842 and tl431 mc34063 step up with mosfet g6351 atx power supply UC3842 diagram schematic diagram dc-dc flyback converter Contextual Info: SWITCHMODEt Power Supplies Reference Manual and Design Guide SMPSRM/D Rev. 3A, July−2002 SCILLC, 2006 Previous Edition © 2002 “All Rights Reserved’’ SMPSRM ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice	Original	July-2002 UC3842 smps design with TL431 MC34063 Boost MOSFET mc34063 step down with mosfet computer schematic power supply circuit diagram circuit diagram of mosfet based smps power supply smps with uc3842 and tl431 mc34063 step up with mosfet g6351 atx power supply UC3842 diagram schematic diagram dc-dc flyback converter	PDF
2PG009 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)	Original	2002/95/EC) 2PG009 O-220D-A1 2PG009	PDF
IGBT MOTOR CONTROL Abstract: IGBT K 40 T 2002 MJ75 Contextual Info: MKI 75-06 A7 IC25 = 90 A = 600 V VCES VCE sat typ. = 2.1 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Preliminary Data B3 Features IGBTs ● Conditions VCES TVJ = 25°C to 150°C Maximum Ratings ● ● 600 V ± 20 V 90 60 A A ICM = 120	Original	MWI7506A7 IGBT MOTOR CONTROL IGBT K 40 T 2002 MJ75	PDF

2PG006 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  High-speed switching: tf = 175 ns (typ.)	Original	2002/95/EC) 2PG006 O-220D-A1 2PG006	PDF
2PG011 Abstract: IGBT 2pg011 SJN00008AED Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High-speed switching: tf = 185 ns (typ.)	Original	2002/95/EC) 2PG011 O-220D-A1 2PG011 IGBT 2pg011 SJN00008AED	PDF
single phase bridge rectifier IC Contextual Info: MUBW 10-12 A7 Converter - Brake - Inverter Module CBI2 21 D11 D13 22 7 1 2 3 D12 D14 D16 T1 D7 D15 D1 16 15 6 T2 T7 14 23 11 10 T3 18 17 T4 D2 D3 T5 D5 20 19 5 D4 12 4 T6 D6 13 24 8 B4 NTC 9 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600V	Original	mot25 MUBW1012A7 single phase bridge rectifier IC	PDF
1006 diode Abstract: b4-10 diode Contextual Info: MUBW 10-06 A7 Converter - Brake - Inverter Module CBI2 21 D11 D13 22 7 1 2 3 D12 D14 D16 T1 D7 D15 D1 16 15 6 T2 T7 14 23 11 10 T3 18 17 T4 D2 D3 T5 D5 20 19 5 D4 12 4 T6 D6 13 24 8 B4 NTC 9 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600V	Original	MUBW1006A7 1006 diode b4-10 diode	PDF
H bridge 300v 30a Abstract: MKI 50-06 A7 Contextual Info: MKI 50-06 A7 IC25 = 72 A = 600 V VCES VCE sat typ. = 1.9 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA 13 T5 T1 Preliminary Data D1 D5 9 1 10 2 16 T2 14 T6 D2 D6 11 3 12 4 17 Features IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C	Original	MWI5006A7 H bridge 300v 30a MKI 50-06 A7	PDF
MUBW10-06A7 Abstract: C150 D-68623 10-06A7 1766 RECTIFIER Contextual Info: MUBW 10-06 A7 Converter - Brake - Inverter Module CBI2 21 D11 D13 22 7 1 2 3 D12 D14 D16 T1 D7 D15 D1 16 15 6 T2 T7 14 23 11 10 T3 18 17 T4 D2 T5 D3 D5 20 19 5 T6 D4 12 4 D6 13 24 8 B4 NTC 9 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600V	Original	MUBW1006A7 MUBW10-06A7 C150 D-68623 10-06A7 1766 RECTIFIER	PDF
d1191 Abstract: 400-12E4 ic equivalent MID 400 MII400-12E4 ZY180L 0002K MJ50150 Contextual Info: MII 400-12E4 IC25 = 420 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Module phaseleg and chopper topolgies with optional temperature sensor MII 400-12E4 MID 400-12E4 MID 400-12E4T 3 T1 11 D2 2 10 1 T2 T2 11 3 T1 D1 1 9 MDI 400-12E4 3 D1 8 MID 400-12E4(T) MDI 400-12E4	Original	400-12E4 400-12E4T 400-12E4 MII400-12E4 d1191 ic equivalent MID 400 MII400-12E4 ZY180L 0002K MJ50150	PDF
GB15XP120KTPBF Abstract: diodes jc 817 gb15xp120kt Contextual Info: GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses	Original	GB15XP120KTPbF E78996 2002/95/EC 18-Jul-08 GB15XP120KTPBF diodes jc 817 gb15xp120kt	PDF
GB05XP120KTPBF Contextual Info: GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses	Original	GB05XP120KTPbF E78996 2002/95/EC 18-Jul-08 GB05XP120KTPBF	PDF
PCIM 96 Abstract: mitsubishi igbt cm Contextual Info: New 1.7kV IGBT Chip with Fine Pattern and Optimized Buffer Layer John F. Donlon, Eric R. Motto K. Satoh, K. Suzuki, Y. Yoshihiura, T. Takahashi Powerex, Inc. 173 Pavilion Lane Youngwood, PA 15697 USA Mitsubishi Electric Corporation 1-1-1Imajukuhigashi Nishi-ku	Original		PDF

IGBT K 40 T 2002 Search Results

IGBT K 40 T 2002 Result Highlights (5)

IGBT K 40 T 2002 Datasheets Context Search

CM600HG-130H

schematic diagram inverter air conditioner

T0360NA25A

IC 0001 SPMS

4kw inverter diagram

full bridge igbt induction heating generator

M7 diode vishay

X4612

STR-G6551

circuit diagram of 5kw smps full bridge

TRANSISTOR 1pz

UC3842 smps design with TL431

2PG009

IGBT MOTOR CONTROL

2PG006

2PG011

single phase bridge rectifier IC

1006 diode

H bridge 300v 30a

MUBW10-06A7

d1191

GB15XP120KTPBF

GB05XP120KTPBF

PCIM 96