IGBT MODULE 1500A Search Results
IGBT MODULE 1500A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| LBUA5QJ2AB-828EVB | Murata Manufacturing Co Ltd | QORVO UWB MODULE EVALUATION KIT |
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| LBUA5QJ2AB-828 | Murata Manufacturing Co Ltd | QORVO UWB MODULE |
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| LBAA0QB1SJ-295 | Murata Manufacturing Co Ltd | SX1262 MODULE WITH OPEN MCU |
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| MYC0409-NA-EVM | Murata Manufacturing Co Ltd | 72W, Charge Pump Module, non-isolated DC/DC Converter, Evaluation board |
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| MHM411-21 | Murata Manufacturing Co Ltd | Ionizer Module, 100-120VAC-input, Negative Ion |
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IGBT MODULE 1500A Datasheets Context Search
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Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FZ750R65KE3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications |
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FZ750R65KE3 | |
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Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD750S65K3 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications |
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DD750S65K3 | |
FZ750R65KE3Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ750R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe |
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FZ750R65KE3 Isolationseigenschaftenvon10 FZ750R65KE3 | |
DD750S65K3Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD750S65K3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 750A / ICRM = 1500A TypischeAnwendungen • Mittelspannungsantriebe |
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DD750S65K3 Isolationseigenschaftenvon10 60yprovideapplicationnotes. DD750S65K3 | |
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Contextual Info: @ M ITEL GP400LSS16S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation DS4987 - 1.3 The GP400LSS16S is a single switch 1600V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the |
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GP400LSS16S DS4987 GP400LSS16S | |
2T920
Abstract: BSM75GP60
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BSM75GP60 2T920 BSM75GP60 | |
2T920
Abstract: BSM75GP60
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BSM75GP60 DB-PIM-10 2T920 BSM75GP60 | |
transistor 600v
Abstract: FF150R12KS4
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FF150R12KS4 transistor 600v FF150R12KS4 | |
FF150R12KS4
Abstract: igbt 150a 600v
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FF150R12KS4 FF150R12KS4 igbt 150a 600v | |
BSM75GP60Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung |
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BSM75GP60 BSM75GP60 | |
ff150r12ks4Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF150R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom |
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FF150R12KS4 FF150R12KS4 | |
MBN1500E33E2
Abstract: ls290 MBN1500E33E nff 16-102 IC1500 GC 72
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IGBT-SP-08002 MBN1500E33E2 000cycles) MBN1500E33E2 ls290 MBN1500E33E nff 16-102 IC1500 GC 72 | |
Hitachi DSA00281
Abstract: 330nf 250 v
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IGBT-SP-10002 MBN1500E33E3 000cycles) Hitachi DSA00281 330nf 250 v | |
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Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10002 R5 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS gate. |
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IGBT-SP-10002 MBN1500E33E3 000cycles) | |
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Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R10 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS gate. |
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IGBT-SP-09008 MBN750H65E2 000cycles) | |
half bridge circuit diagram
Abstract: lc 6231 ge traction motor 12v dc to 220a cv inverter circuits diagrams GP200MHB12S UPS circuit diagram
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GP200MHB12S DS4339 GP200MHB12S half bridge circuit diagram lc 6231 ge traction motor 12v dc to 220a cv inverter circuits diagrams UPS circuit diagram | |
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Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08002 R6 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. |
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IGBT-SP-08002 MBN1500E33E2 000cycles) | |
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Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R9 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS gate. |
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IGBT-SP-09008 MBN750H65E2 000cycles) | |
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Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R8 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. |
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IGBT-SP-09008 MBN750H65E2 000cycles) | |
ZTH 429E
Abstract: UC 493 igbt 1500A 249E-01
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FS35R12KE3 769E-02 345E-03 674E-02 333E-03 052E-01 820E-01 249E-01 429E-02 709E-01 ZTH 429E UC 493 igbt 1500A 249E-01 | |
fs*r12ke3Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FS35R12KE3 G Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES |
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FS35R12KE3 fs*r12ke3 | |
nf-009
Abstract: circuit ntc-thermistor
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FS35R12KE3 769E-02 345E-03 674E-02 333E-03 052E-01 820E-01 249E-01 429E-02 709E-01 nf-009 circuit ntc-thermistor | |
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Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FS35R12KE3 G Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES |
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FS35R12KE3 769E-02 345E-03 674E-02 333E-03 052E-01 820E-01 249E-01 429E-02 709E-01 | |
FF150R12KE3
Abstract: FF150R12KE ff150r12ke3g zigbee interfacing with pc FF150
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FF150R12KE3 499E-02 601E-02 364E-03 187E-05 FF150R12KE3G FF150R12KE zigbee interfacing with pc FF150 | |