IGBT MODULE P11 Search Results

IGBT MODULE P11 Result Highlights (5)

Part	Manufacturer	Description
LBUA5QJ2AB-828EVB	Murata Manufacturing Co Ltd	QORVO UWB MODULE EVALUATION KIT
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
MYC0409-NA-EVM	Murata Manufacturing Co Ltd	72W, Charge Pump Module, non-isolated DC/DC Converter, Evaluation board
MHM411-21	Murata Manufacturing Co Ltd	Ionizer Module, 100-120VAC-input, Negative Ion

IGBT MODULE P11 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-04010R5 P1 MBM600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.	Original	IGBT-SP-04010R5 MBM600E17D 000cycles)	PDF
Measurement of stray inductance for IGBT Abstract: circuit diagram for igbt hitachi igbt igbt module p11 Contextual Info: IGBT MODULE Spec.No.IGBT-SP-04010R4 P1 MBM600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.	Original	IGBT-SP-04010R4 MBM600E17D 000cycles) Measurement of stray inductance for IGBT circuit diagram for igbt hitachi igbt igbt module p11	PDF
corrosion inhibitor Abstract: Hitachi DSA00281 Contextual Info: Dual IGBT Module Spec.No.IGBT-SP-10006-R2 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.	Original	IGBT-SP-10006-R2 MBM600F17D 000cycles) 50Hwhole corrosion inhibitor Hitachi DSA00281	PDF
G15BB Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09025 R5 P1 MBN500H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.	Original	IGBT-SP-09025 MBN500H65E2 000cycles) G15BB	PDF
Hitachi DSA00281 Abstract: 30s1200 Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09025 R2 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.	Original	IGBT-SP-09025 MBN500H65E2 000cycles) Hitachi DSA00281 30s1200	PDF
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09025 R4 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.	Original	IGBT-SP-09025 MBN500H65E2 000cycles)	PDF
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09025 R3 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.	Original	IGBT-SP-09025 MBN500H65E2 000cycles)	PDF
MBN1500E33E2 Abstract: ls290 MBN1500E33E nff 16-102 IC1500 GC 72 Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.	Original	IGBT-SP-08002 MBN1500E33E2 000cycles) MBN1500E33E2 ls290 MBN1500E33E nff 16-102 IC1500 GC 72	PDF
MBN1500E33E2 Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08002 R7 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.	Original	IGBT-SP-08002 MBN1500E33E2 000cycles) MBN1500E33E2	PDF
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R10 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.	Original	IGBT-SP-09008 MBN750H65E2 000cycles)	PDF
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08002 R6 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.	Original	IGBT-SP-08002 MBN1500E33E2 000cycles)	PDF
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R9 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.	Original	IGBT-SP-09008 MBN750H65E2 000cycles)	PDF
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R8 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.	Original	IGBT-SP-09008 MBN750H65E2 000cycles)	PDF
IGBT 6500V Abstract: Hitachi DSA00281 Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R7 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.	Original	IGBT-SP-09008 MBN750H65E2 000cycles) IGBT 6500V Hitachi DSA00281	PDF

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-12023 R3 MBM250H33E3 Preliminary Specification Silicon N-channel IGBT 3300V E3 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.	Original	IGBT-SP-12023 MBM250H33E3	PDF
MBN750H65E2 Abstract: IGBT 6500V 09008 Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R6 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.	Original	IGBT-SP-09008 MBN750H65E2 000cycles) MBN750H65E2 IGBT 6500V 09008	PDF
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-12023 R1 MBM250H33E3 Preliminary Specification Silicon N-channel IGBT 3300V E3 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.	Original	IGBT-SP-12023 MBM250H33E3	PDF
skhi 24 r Contextual Info: SKHI 21A R . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions Values Units % &)25$	Original		PDF
2MBI400TB-060 Abstract: ED-4701 2mbi400tb 2MBI400TB060 Contextual Info: SPECIFICATION Device Name : IGBT Module Type Name : 2MBI400TB-060 Spec. No. : MS5F 5293 Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 22 '02 Y.Kobayashi Oct. 23 '02 T.Miyasaka K.Yamada T.Fujihira MS5F 5293 1 14 a b c H04-004-07 Revised Records Date Classification	Original	2MBI400TB-060 H04-004-07 P7/14) P11/14, H04-004-03 2MBI400TB-060 ED-4701 2mbi400tb 2MBI400TB060	PDF
2MBI400TB-060 Abstract: ED-4701 5293 Contextual Info: SPECIFICATION Device Name : IGBT Module Type Name : 2MBI400TB-060 Spec. No. : MS5F 5293 Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 22 ’02 Y.Kobayashi T.Fujihira Oct. 23 ’02 T.Miyasaka K.Yamada MS5F 5293 a b 1 14 H04-004-07 Revised Records Date Classification	Original	2MBI400TB-060 H04-004-07 P7/14) P11/14 H04-004-03 2MBI400TB-060 ED-4701 5293	PDF
6MBI75UA-120 Abstract: ED-4701 MT5F12959 Contextual Info: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI75UA-120 Spec. No. : MS5F 5354 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 31 ’03 Y.Kobayashi Jan. 31 ’03 T.Miyasaka Jan.- 31- ’03 K.Yamada T.Fujihira MS5F 5354 a 1 13 H04-004-07 Revised Records	Original	6MBI75UA-120 H04-004-07 P4/13) P11/13) H04-004-06 6MBI75e H04-004-03 6MBI75UA-120 ED-4701 MT5F12959	PDF
2MBI150U2A-060 Abstract: ED-4701 M232 MT5F12959 2mbi150u2a Contextual Info: SPECIFICATION Device Name : IGBT module Type Name : 2MBI150U2A-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5615 MS5F 5615 1 a 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Jan.-16 -’04 Revision	Original	2MBI150U2A-060 MS5F5615 H04-004-07b P4/13) P12/13, H04-004-06b H04-004-03a 2MBI150U2A-060 ED-4701 M232 MT5F12959 2mbi150u2a	PDF
2MBI300U2B-060 Abstract: 30-.03 m ED-4701 M233 MS5F5617 MT5F12959 2MBI300 Contextual Info: SPECIFICATION Device Name : IGBT module Type Name : 2MBI300U2B-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5617 MS5F 5617 1 a 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Jan.-16 -’04 Revision	Original	2MBI300U2B-060 MS5F5617 H04-004-07b P4/13) P12/13, H04-004-06b H04-004-03a 2MBI300U2B-060 30-.03 m ED-4701 M233 MS5F5617 MT5F12959 2MBI300	PDF
2MBI400U2B-060 Abstract: ED-4701 M233 MT5F12959 Contextual Info: SPECIFICATION Device Name : IGBT module Type Name : 2MBI400U2B-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5618 MS5F 5618 1 a 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Jan.-16 -’04 Revision	Original	2MBI400U2B-060 MS5F5618 H04-004-07b P4/13) P12/13, H04-004-06b H04-004-03a 2MBI400U2B-060 ED-4701 M233 MT5F12959	PDF

IGBT MODULE P11 Search Results

IGBT MODULE P11 Result Highlights (5)

IGBT MODULE P11 Datasheets Context Search

Measurement of stray inductance for IGBT

corrosion inhibitor

G15BB

Hitachi DSA00281

MBN1500E33E2

MBN1500E33E2

IGBT 6500V

MBN750H65E2

skhi 24 r

2MBI400TB-060

2MBI400TB-060

6MBI75UA-120

2MBI150U2A-060

2MBI300U2B-060

2MBI400U2B-060