IGBT PH50S Search Results

IGBT PH50S Result Highlights (5)

Part	Manufacturer	Description
GT30J122A	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)
GT30J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)
GT50J123	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)
GT20J121	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS
GT40J322	Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 40 A, Built-in Diodes, TO-3P(N)

IGBT PH50S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRG4 Abstract: IGBT PH50S Contextual Info: International I R Rectifier pd-». preliminary IRG4 PH50S INSULATED GATE BIPOLAR TRANSISTOR S tandard Sp eed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter	OCR Scan	PH50S O-247AC IRG4 IGBT PH50S	PDF

Catalog Datasheet

Type

Document Tags

PDF

IRG4

Abstract: IGBT PH50S
Contextual Info: International I R Rectifier pd-». preliminary IRG4 PH50S INSULATED GATE BIPOLAR TRANSISTOR S tandard Sp eed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

OCR Scan

PH50S O-247AC IRG4 IGBT PH50S

PDF