IGBT PM20 Search Results

pm20cma060

Abstract: 3 phase rectifier circuit diagram igbt ultrafast n channel 600v 20a IGBT h 9128 Alcohol detection with vehicle controlling pm20c P channel 600v 20a IGBT resistor sms diode B5C 3 phase UPS block WITH CIRCUIT diagram
Contextual Info: International fegjRectifier PD 9128 provisional_ PM20CMA060 IGBT INTELLIGENT MODULE Features • 3 phase IGBT bridge with drive and protection circuit. • 3 kW output power at 300VDC, 8kHz, Tc = 85°C • "UltraFast" IGBT and “HEXFRED”™ Ultratast, Soft Recovery

M57962AL

Abstract: IPM Inverter vla531 VLA500-01R M57962 PM200CL1A120 VLA502 MITSUBISHI ipm MODULES ps IGBT 600V 12A VLA500K-01R
Contextual Info: IGBT gate drivers DC-DC converters Apr. 2010 PoWer Module Division ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 1 /30 Pre-regulator AC200V or AC440V RECTIFIER VLA31X Isolated DC-DC converter IGBT driver VLA106 VLA503 VLA106 VLA503 VLA106 IGBT Module

PM20CTM060

Abstract: E80276 mitsubishi air conditioner
Contextual Info: MITSUBISHI INTELLIGENT POWER MODULES PM20CTM060 FLAT-BASE TYPE INSULATED PACKAGE PM20CTM060 ¡600V, 20A Current-sense 6kHz IGBT type inverter ¡Built in IGBT gate drive circuit ¡Built in Faule OC, SC, OT & UV protection Fault output ¡1.5kW class inverter application

PM20CTM060

Abstract: DSA00225323 mitsubishi inverter air conditioning E80276 PM20CTM060-3
Contextual Info: MITSUBISHI INTELLIGENT POWER MODULES PM20CTM060-3 FLAT-BASE TYPE INSULATED PACKAGE PM20CTM060-3 ¡600V, 20A Current-sense 6kHz IGBT type inverter ¡Built in IGBT gate drive circuit ¡Built in Faule OC, SC, OT & UV protection Fault output ¡1.5kW class inverter application

PM200CL1A060

Contextual Info: Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 PM200CL1A060 Intellimod L-Series Three Phase IGBT Inverter 200 Amperes/600 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL)

Contextual Info: Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 PM200RL1A060 Intellimod L1-Series Three Phase IGBT Inverter + Brake 200 Amperes/600 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL - INVERTER PART) OUTPUT CHARACTERISTICS

E80276

Abstract: PM20CNJ060 Mitsubishi IPM 20A
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM20CNJ060 PM20CNJ060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM20CNJ060 • 3 phase IGBT 20A/600V inverter output • Monolithic gate drive & protection logic circuit

PM20CHA060

Contextual Info: MITSUBISHI INTELLIGENT POWER MODULES PM20CHA060 FLAT-BASE TYPE INSULATED PACKAGE PM20CHA060 • 30 2OA, 600V Current-sense IGBT type inverter • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for over-current, short-circuit,

Contextual Info: PM200CSA060 Intellimod Modules Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Three Phase IGBT Inverter Output 200 Amperes/600 Volts Description: Powerex Intellimod Modules are designed for applications requiring a high frequency (20kHz) output

PM200CBS060

Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM200CBS060 PM200CBS060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM200CBS060 FEATURE a Adopting 4th generation IGBT chip, which performance is improved by 1µm fine rule process.

PM20CMA060

Contextual Info: MITSUBISHI INTELLIGENT POWER MODULES PM20CMA060 FLAT-BASE TYPE INSULATED PACKAGE PM20CMA060 • 3 0 20A, 600V Current-sense IGBT type inverter • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for over-current, short-circuit,

37KW

Abstract: PM200DVA120 E80276
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM200DVA120 PM200DVA120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM200DVA120 FEATURE • 3φ 200A, 1200V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM200CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

PM200CLA060

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM200CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM200RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM200DVA120 PM200DVA120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM200DVA120 FEATURE • 1φ 200A, 1200V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic

PM200RLA060

Abstract: IPM Inverter
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM200RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

E80276

Abstract: PM200CVA060
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM200CVA060 PM200CVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM200CVA060 FEATURE • 3φ 200A, 600V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic

E80276

Abstract: PM200CLA060
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM200CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

"SINUSOIDAL PWM"

Abstract: E80276 PM200CVA060
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM200CVA060 PM200CVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM200CVA060 FEATURE • 3φ 200A, 600V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic

Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM200CVA060 PM200CVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM200CVA060 FEATURE • 3φ 200A, 600V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM200CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

E80276

Abstract: PM200RLA060
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM200RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM200RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C