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    IGBT SEMICRON Search Results

    IGBT SEMICRON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT50J123
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 59 A, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT20J121
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    GT30J121
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30J122A
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT20J341
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IGBT SEMICRON Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5732

    Abstract: DATA SHEET OF SEMICRON IGBT SML150FBH06 igbt semicron
    Contextual Info: SML150FBH06 SUPERFAST 3 PHASE NPT-IGBT BRIDGE MODULE IN A HERMETICALLY SEALED METAL PACKAGE FEATURES • N CHANNEL, HOMOGENEOUS SILICON STRUCTURE NPT – NON PUNCH THROUGH IGBT . • LOW TAIL CURRENT WITH LOW TEMPERATURE DEPENDANCE. • HIGH SHORT CIRCUIT CAPABILITY


    Original     		SML150FBH06 62max 250max 630max SIGC121T6NR2C SKCD61C060/1 5732 DATA SHEET OF SEMICRON IGBT SML150FBH06 igbt semicron PDF