IGBT TOSHIBA MG Search Results

TOSHIBA IGBT

Abstract: 800 kw Toshiba AC motor MG900GXH1US53 4 kw Toshiba AC motor diode 900A
Contextual Info: TOSHIBA MG900GXH1US53 TOSHIBA IGBT TENTATIVE DATA MODULE MG900GXH1US53 SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features • High Input Impedance • Enhancement Mode • Electrodes are Isolated from Case EQUIVALENT CIRCUIT

MG400V2YS60A

Contextual Info: TOSHIBA MG400V2YS60A TOSHIBA IGBT MODULE SILICON N CHANNEL IGBT MG400V2 YS60A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. Enhancement-Mode Thermal Output Terminal TH EQUIVALENT CIRCUIT

TOSHIBA IGBT

Abstract: MG25J1BS11 igbt 25A toshiba
Contextual Info: MG25J1BS11 TOSHIBA IGBT Module Silicon N - Channel IGBT MG25J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

MG75J1BS11

Abstract: TOSHIBA IGBT DATA BOOK TOSHIBA IGBT
Contextual Info: MG75J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

MG50Q1BS11

Abstract: TOSHIBA IGBT IC 7800 MG50Q1BS1 toshiba 7800 MG50Q1BS11 equivalent
Contextual Info: MG50Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C

TOSHIBA IGBT DATA BOOK

Abstract: TOSHIBA IGBT MG75Q1BS11 IGBT Guide
Contextual Info: MG75Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C

MG50J1BS11

Contextual Info: MG50J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

MG25Q1BS11

Contextual Info: MG25Q1BS11 TOSHIBA IGBT Module Silicon N - Channel IGBT MG25Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C

MG150J1BS11

Abstract: TOSHIBA IGBT TOSHIBA IGBT MG150J1BS11
Contextual Info: MG150J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

TOSHIBA IGBT

Abstract: MG100J1BS11
Contextual Info: MG100J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG100J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

MG25J1BS11

Contextual Info: MG25J1BS11 TOSHIBA IGBT Module Silicon N - Channel IGBT MG25J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

mg150j

Abstract: TOSHIBA IGBT MG150J1BS11
Contextual Info: MG150J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

MG25Q1BS11

Contextual Info: MG25Q1BS11 TOSHIBA IGBT Module Silicon N - Channel IGBT MG25Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C

Contextual Info: MG100J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG100J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

MG75J1BS11

Contextual Info: MG75J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75J1BS11 High Power Switching Applications Motor Control Applications l Enhancement-mode l The electrodes are isolated from case. Unit: mm Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

MG50J1BS11

Contextual Info: MG50J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

MG50Q1BS11

Abstract: TOSHIBA IGBT
Contextual Info: MG50Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50Q1BS11 High Power Switching Applications Motor Control Applications l Enhancement-mode l The electrodes are isolated from case. Unit: mm Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C

TOSHIBA IGBT

Abstract: MG100Q2YS65H "TOSHIBA IGBT module"
Contextual Info: TOSHIBA MG100Q2YS65H TENTATIVE TOSHIBA IGBT MODULE SILICON N Channel IGBT M G 1 0 0 Q2 Y S 6 5 H O HIGH POWER &HIGH SPEED SWITCHING APPUOATIONS •High Input impedance • Enhancem ent-M ode •The Electrodes are Isolated from Case. EQUIVALENT CIRCUIT El C io

PC 181 OPTO

Abstract: MG50N2YS1 16175 MU51
Contextual Info: TD TOSHIBA {DISCRETE/OPTO]- D e J IìGci72S0 DDlbl74 0 | 9097250 TOSHIBA <DISCRETE/OPTO TOSHIBA 90D 16174 SEMICONDUCTOR D TOSHIBA GTR MODULE MG50N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm

Contextual Info: TOSHIBA { D I SC RE TE /OPT O} *TG 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR dFI^CHTESO GDlbiao Q 90D 16120 D T - 33-/3 TOSHIBA GTR MODULE MG25H1BS1 TECHNICAL DATA SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

Contextual Info: TOSHIBA {DI SC RE TE /OPT O} * • dF 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR I t o ^tssd 90D 16129 auibiai D t 7"-33~/3 TOSHIBA GTR MODULE MG50H1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

MG1200FXF1US53

Abstract: 4500a Toshiba IGBT 1200A 3300V YG6260 transistor BA RW diode ba 124 ba ph 20v diode ba qu IGBT GTR IPM sage power switching 15v 1.2a
Contextual Info: MG1200FXF1US53 TOSHIBA Target Spec. TOSHIBA GTR MODULE MG1200FXF1US53 S ILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features ●High Input Impedance ●Enhancement Mode ●Electrodes are Isolated from Case EQUIVALENT CIRCUIT

Contextual Info: MG400V2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG400V2YS60A High Power Switching Applications Motor Control Applications • The electrodes are isolated from case. • Enhancement−mode • Thermal output terminal TH Unit: mm Equivalent Circuit

Contextual Info: MG600Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q2YS60A High Power Switching Applications Motor Control Applications • The electrodes are isolated from case. • Enhancement−mode • Thermal output terminal TH Unit: mm Equivalent Circuit