Untitled
Abstract: No abstract text available
Text: VS-GP100TS60SFPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT INT-A-PAK, Trench PT IGBT , 100 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Trench PT IGBT technology • • • • • • INT-A-PAK BENEFITS • Optimized for high current inverter stages (AC TIG welding
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VS-GP100TS60SFPbF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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IKW40N120H3
Abstract: IKW40N60 30100 transistor IKW25N120H3 welding inverter IKW40N120T2 Induction Heating Resonant Inverter IGW40N120H3 IKW50N60T IKW40N60H3
Text: Discrete IGBT Selection Tree YES IGBT NO Single IGBT IGBT + Anti-Parallel Diode Soft Hard Diode Commutation Frequency Range 2 – 20 kHz TRENCHSTOP 20 – 100 kHz HighSpeed 2 – 20 kHz TRENCHSTOP™ Duopack 8 – 60 kHz RC series (monolythic) 2 – 20 kHz
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IGpccN60H3
IGpccN120H2
IGpccN120H3
IGpccN60T.
IGpccN100T
IGpccT120.
IGpccN120
IHpccN60T.
IHpccT60.
IHpccN90T
IKW40N120H3
IKW40N60
30100 transistor
IKW25N120H3
welding inverter
IKW40N120T2
Induction Heating Resonant Inverter
IGW40N120H3
IKW50N60T
IKW40N60H3
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VS-GT105LA120UX
Abstract: No abstract text available
Text: 600/650 V and 1200 V, 50 A to 250 A IGBT Modules 600/650 V and 1200 V, up to 250 A IGBT Modules in SOT-227 Package High efficiency IGBT Modules featuring SOT-227 standard outline. A choice of PT, NPT and Trench IGBT technologies allows usage in switching frequencies from
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OT-227
OT-227
VS-GT120DA65U
VS-GT140DA60U
VS-GA200SA60UP
VS-GB55LA120UX
VS-GP250SA60S
VS-GB55NA120UX
VS-GB75LA60UF
VS-GB75NA60UF
VS-GT105LA120UX
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kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
kpb 307
KP8 500
KP9 1500 -12
KPd 1500 TEG
KP5-600 THYRISTOR
KP8 800
igbt types 6000v
KP7 500
TBA 1240 ic
teg thyristor
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DCR370T
Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches
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4500Vee
DS5766-4.
DCR370T
DCR370T18
DCR1560F26
DCR1560F
drd2960y40
alsic 105
DCR1710F18
DCR650G34
DCR2760V
DRD850D34
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GC 72 smd diode
Abstract: No abstract text available
Text: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
GC 72 smd diode
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GC 72 smd diode
Abstract: No abstract text available
Text: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996
2002/95/EC
11-Mar-11
GC 72 smd diode
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Untitled
Abstract: No abstract text available
Text: VS-70MT060WHTAPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT MTP Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • HEXFRED antiparallel diodes with ultrasoft reverse recovery
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VS-70MT060WHTAPbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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ultrafast igbt
Abstract: 50mt060ulstapbf GC smd diode 94540
Text: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996
2002/95/EC
18-Jul-08
ultrafast igbt
50mt060ulstapbf
GC smd diode
94540
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Untitled
Abstract: No abstract text available
Text: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-70MT060WHTAPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT MTP Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • HEXFRED antiparallel diodes with ultrasoft reverse recovery
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VS-70MT060WHTAPbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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VS-GA200HS60S1PBF
Abstract: No abstract text available
Text: VS-GA200HS60S1PbF www.vishay.com Vishay Semiconductors INT-A-PAK Half Bridge IGBT Standard Speed IGBT , 200 A FEATURES • Gen 4 IGBT technology • Standard: optimized for hard switching speed • Very low conduction losses • Industry standard package
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VS-GA200HS60S1PbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-GA200HS60S1PBF
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M57962AL
Abstract: DATA SHEET OF IGBT IGBT control circuit igbt welding igbt wiring Igbt 15kV 600A M57962 "IGBT Driver" IGBT with V-I characteristics OPTO COUPLER
Text: QC962 Hybrid Integrated IGBT Driver QC962 is a hybrid integrated IGBT driver designed for driving N-channel IGBT modules in any gate amplifier application. The device provides the required electrical isolation between input and output with the opto-coupler.
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QC962
QC962
pin13
pin14
3300pF
51MAX
10MAX
M57962AL
DATA SHEET OF IGBT
IGBT control circuit
igbt welding
igbt wiring
Igbt 15kV 600A
M57962
"IGBT Driver"
IGBT with V-I characteristics
OPTO COUPLER
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Untitled
Abstract: No abstract text available
Text: VS-25MT060WFAPbF www.vishay.com Vishay Semiconductors “Full Bridge” IGBT MTP Warp Speed IGBT , 50 A FEATURES • Gen 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses
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VS-25MT060WFAPbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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VS-GA100TS60SFPBF
Abstract: No abstract text available
Text: VS-GA100TS60SFPbF www.vishay.com Vishay Semiconductors “Half-Bridge” IGBT INT-A-PAK, Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery
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VS-GA100TS60SFPbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-GA100TS60SFPBF
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Diode smd code EXP
Abstract: No abstract text available
Text: Bulletin I27247 rev. B 11/06 70MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT Features VCES = 600V • NPT Warp2 Speed IGBT Technology with Positive Temperature Coefficient • Hexfred Antiparallel Diodes with UltraSoft Reverse Recovery • SMD Thermistor NTC
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I27247
70MT060WHTAPbF
150kHz
Diode smd code EXP
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Untitled
Abstract: No abstract text available
Text: VS-50MT060WHTAPbF www.vishay.com Vishay Semiconductors "Half Bridge" IGBT MTP Warp Speed IGBT , 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses
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VS-50MT060WHTAPbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-25MT060WFAPbF www.vishay.com Vishay Semiconductors "Full Bridge" IGBT MTP Warp Speed IGBT , 50 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses
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VS-25MT060WFAPbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Bulletin I27247 08/06 70MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT Features • NPT Warp2 Speed IGBT Technology with Positive Temperature Coefficient • Hexfred Antiparallel Diodes with UltraSoft Reverse Recovery • SMD Thermistor NTC • Al2O3 DBC
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I27247
70MT060WHTAPbF
150kHz
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Untitled
Abstract: No abstract text available
Text: Bulletin I27247 rev. B 11/06 70MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT Features VCES = 600V • NPT Warp2 Speed IGBT Technology with Positive Temperature Coefficient • Hexfred Antiparallel Diodes with UltraSoft Reverse Recovery • SMD Thermistor NTC
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I27247
70MT060WHTAPbF
150kHz
12-Mar-07
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GB50NA120UX
Abstract: No abstract text available
Text: GB50NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Ultrafast IGBT , 50 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227
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GB50NA120UX
OT-227
E78996
2002/95/EC
OT-227
18-Jul-08
GB50NA120UX
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Untitled
Abstract: No abstract text available
Text: 70MT060WHTAPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT MTP Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • HEXFRED antiparallel diodes with ultrasoft reverse recovery • SMD thermistor (NTC)
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70MT060WHTAPbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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