IH JAR Search Results

SGL40N150

Contextual Info: SGL40N150 N- CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Voltage : VCE sat = 3.7 V typ. (at lc=40A) * High Input Impedance APPLICATIONS * Home Appliance - Induction Heater -IH JAR - Micro Wave Oven ABSOLUTE MAXIMUM RATINGS Symbol Characteristics

Contextual Info: N- CHANNEL IGBT SGL40N150 FEATURES * High Speed Switching * Low Saturation Voltage : VCE sat = 3.7 V typ. (at lc=40A) * High Input Impedance APPLICATIONS * Home Appliance - Induction Heater - IH JAR - Micro Wave Oven ABSOLUTE MAXIMUM RATINGS Symbol Characteristics

FGA25N135

Abstract: igbt induction cooker FGA25N135AND fairchild Resonant IC induction heat resonant induction cooker induction heating cooker control ic for induction heating cooker 15v 60w smps induction heating ic
Contextual Info: FGA25N135AND General Description Features Fairchild 1350V NPT IGBTs provide an optimum solution for resonant and quasi-resonant circuitry such as induction heating IH jars and cookers. With increase in the rated voltage, the FGL25N135AND is specially designed for

Contextual Info: SGL60N90D IGBT CO-PAK FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.7 V (at lc=60A) * High Input Impedance 1 APPLICATIONS * Home Appliance - Induction Heater -IH JAR - Micro Wave Oven ABSOLUTE MAXIMUM RATINGS Symbol Characteristics

Contextual Info: SGL60N90D IGBT CO-PAK FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.7 V (at lc=60A) * High Input Impedance 1 APPLICATIONS * Home Appliance - Induction Heater - IH JAR - Micro Wave Oven ABSOLUTE MAXIMUM RATINGS Symbol Characteristics

micro wave oven

Abstract: IGBT 60A
Contextual Info: SGL60N90D IGBT CO-PAK FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.7 V (at lc=60A) * High Input Impedance 1 APPLICATIONS * Home Appliance - Induction Heater -IH JAR - Micro Wave Oven ABSOLUTE MAXIMUM RATINGS Symbol Characteristics

SGL60N90DG3

Contextual Info: N-CHANNEL IGBT SGL60N90DG3 FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (at lc=60A) * High Input Impedance * Built in Fast Recovery Diode 1 APPLICATIONS * Home Appliance - Induction Heater - IH JAR - Micro Wave Oven ABSOLUTE

P channel 600v IGBT

Contextual Info: Preliminary N- CHANNEL IGBT SGL40N150D FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 3.7 V typ. (at lc=40A) * High Input Impedance * Built in Fast Recovery Diode 1 APPLICATIONS * Home Appliance - Induction Heater - IH JAR - Micro Wave Oven

SGL60N90D

Contextual Info: SGL60N90D IGBT CO-PAK FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.7 V (at IC=60A) * High Input Impedance 1 APPLICATIONS C * Home Appliance - Induction Heater - IH JAR - Micro Wave Oven G E ABSOLUTE MAXIMUM RATINGS Symbol

Contextual Info: SGL40N150 N- CHANNEL IGBT FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 3.7 V typ. (at IC=40A) * High Input Impedance 1 APPLICATIONS C * Home Appliance - Induction Heater - IH JAR - Micro Wave Oven G E ABSOLUTE MAXIMUM RATINGS

SGL60N98D

Abstract: induction heater igbt 0n
Contextual Info: SGL60N98D IGBT CO-PAK FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.7 V (at IC=60A) * High Input Impedance 1 APPLICATIONS C * Home Appliance - Induction Heater - IH JAR - Micro Wave Oven G E ABSOLUTE MAXIMUM RATINGS Symbol

SGL60N98D

Contextual Info: SGL60N98D IGBT CO-PAK FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.7 V (at lc=60A) * High Input Impedance 1 APPLICATIONS * Home Appliance - Induction Heater -IH JAR - Micro Wave Oven ABSOLUTE MAXIMUM RATINGS Symbol Characteristics

Contextual Info: SGL60N98D IGBT CO-PAK FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.7 V (at lc=60A) * High Input Impedance 1 APPLICATIONS * Home Appliance - Induction Heater - IH JAR - Micro Wave Oven ABSOLUTE MAXIMUM RATINGS Symbol Characteristics

80ACPU

Abstract: k747 B452A HJU6452A HJU645ZF NJU6452A NJU645ZA
Contextual Info: CNJ ir a -<- V -> l[\ V • • V ^a- c o A K V ÍN Ih V 3S ÎK g ^ 116 • m u- A ih & V U . IS1 Jig M V iK Û U- -“- <N o -> S' AJ -J co LO lì1 CM S X m V -E ir< -> A _ l 'AJ V °rs £ s X A -5- o jiij •Inc l> - !? S j- U K •> IP n -5 * K * :-' U

Contextual Info: SGL60N90DG3 N-CHANNEL IGBT FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (at lc=60A) * High Input Impedance * Built in Fast Recovery Diode 1 APPLICATIONS * Home Appliance - Induction Heater -IH JAR - Micro Wave Oven ABSOLUTE

micro wave oven

Abstract: IGBT 60A induction heater
Contextual Info: Preliminary IGBT CO-PAK SGL60N90DG3 FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.1 V (at lc=60A) * High Input Impedance * Built in Fast Recovery Diode 1 APPLICATIONS * Home Appliance - Induction Heater -IH JAR - Micro Wave Oven

fairchild induction heater

Abstract: SGL60N90DG3 n-channel, 75v, 80a n-channel, 75v, 60a 12v dc to 8.5v dc 60A 150V IGBT
Contextual Info: SGL60N90DG3 N-CHANNEL IGBT FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (at IC=60A) * High Input Impedance * Built in Fast Recovery Diode 1 C APPLICATIONS * Home Appliance - Induction Heater - IH JAR - Micro Wave Oven

Contextual Info: SGL60N90D IGBT CO-PAK FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : V CE sat = 2.7 V (at lc=60A) * High Input Impedance 1 APPLICATIONS * Home Appliance - Induction Heater - IH JAR - Micro W ave Oven ABSOLUTE MAXIMUM RATINGS Symbol Characteristics

Contextual Info: CO-PAK IGBT SGL40N150D FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 3.7 V typ. at lc=40A * High Input Impedance * Built in Fast Recovery Diode :VF=1.7 at lF=10A, trr=170ns 1 APPLICATIONS * Home Appliance - Induction Heater -IH JAR

Contextual Info: SGL40N150D CO-PAK IGBT FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 3.7 V typ. at lc=40A * High Input Impedance * Built in Fast Recovery Diode :VF=1.7 at lF=10A, trr=170ns 1 APPLICATIONS * Home Appliance - Induction Heater - IH JAR

FGL60N100DTU

Abstract: fgl60n100d
Contextual Info: FGL60N100D General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH

FGL60N100D

Contextual Info: FGL60N100D General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH

IGBT 900v 60a

Abstract: Ir 900v 60a SGL60N90DG3
Contextual Info: IGBT SGL60N90DG3 General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH

SGF15N90D

Abstract: power Diode 20A
Contextual Info: IGBT SGF15N90D General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH