IM 358 MICRO Search Results

Contextual Info: micRouiRVE comportEfiTs D C to 15GHz □ R F Coaxial Sw itches C L 358 GENERAL FEATURES These H C S-2 series coaxial switches are S P D T single-pole double-throw failsafe type with HRM resistance. The MTTF is greater than 100,000 (cycles . (S M A ) connections. They are an im provem ent o f the

im 358 micro

Abstract: CMA3000 mems
Contextual Info: PRESSEMITTEILUNG - 25. Oktober 2010 VTI expandiert mit Konsumer Gyroskopen und Timing Devices MEMS-Pionier mischt Wachstumsmärkte auf VTI Technologies, ein Micro-Electro-Mechanical Systems-Pionier MEMS mit 20 Jahren Erfahrung, orientiert sich neu und erweitert mit dem Einstieg in das Segment Konsumer-Elektronik seine Zielmärkte.

Contextual Info: PACKAGE OUTLINES Page SOTIOO 348 SOT122A 349 SOT422A 350 SOT423A 351 SOT437A 352 SOT439A 353 SOT440A 354 SOT441A 355 SOT442A 356 SOT443A 357 SOT445A 358 SOT445B 359 SOT446A 360 SOT447A 361 SOT448A 362 SOT469A 363 Philips Semiconductors Microwave transistors

Contextual Info: MICRO QUADLOK SYSTEM t i f c a j Electronics Application Specification Crânping Corxlrtion of S tx ^ Coitaci Ftexibie-WireType 114-18021-3 AM P _ C 7 1 30MAY03 REV.A _ T f'ïï-ïa y 'J-W R it AMP Amtbtc7?'}>r-:/3y'J-iM ‘%&mL. h' lû lc I i& fiE è ftü - ttA / c

Simple Circuit Diagram of 230V to 3V Voltage Converter

Abstract: BP5Q41
Contextual Info: Regulator ICs AC/DC converter unit BP5041 The BP5041 is an A C / DC converter which can be used to supply + 1 2V, 100mA DC output from a commercial pow­ er supply 200 to 230V AC . Using this unit enables simple, easy drive of microcomputers, LEDs, and other electron­

1402 Transistor

Abstract: transistor 1402 M107 SD1402
Contextual Info: H /is 'n m n n * -* . n arar» S I r / l C l U O v l f 11 P ro g re s s P o w e re d b y T ec h no log y Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 SD1402 RF & MICROWAVE TRANSISTORS 860-960MHZ CLASS C, MOBILE APPLICATION CLASS C TRANSISTOR

electronica

Abstract: im 358 micro CMR3000 drehratensensor
Contextual Info: PRESSEMITTEILUNG 8 November 2010 Kleiner, schlanker, schlagkräftiger - VTI stellt den kleinsten und stromsparendsten 3-achsigen Drehratensensor vor Für die Sensierung von Bewegungen in Konsumer-Elektronik-Applikationen stellte VTI Technologies am heutigen Tage auf der Electronica 2010 in München mit dem CMR3000 den weltweit kleinsten digitalen 3achsigen Drehratensensor mit geringstem Energieverbrauch vor.

2904N

Abstract: IC LM 358 LM 358 st 2904 lm 358 ic IC LM 258 LM 358 opamp 358a lm 538 n ic lt 2904
Contextual Info: g ì SCS-THOMSON lm i 58,a-lm258,a IlLitm «! LM358,A-LM2904-NE532 LOW POWER DUAL OPERATIONAL AMPLIFIERS INTERNALLY FREQUENCY COMPENSATED. LARGE DC VOLTAGE GAIN : 100 dB WIDE BANDWIDTH unity gain : 1.1 MHz (tem­ perature compensated) VERY LOW SUPPLY CURRENT/AMPLI

Firmware ir 8500

Abstract: D12Test circuit diagram for scsi to usb D12FW auo 002 c 33740 B341 DIP28 PDIUSBD12 S028
Contextual Info: The P D I U S B D I 2 is a high perform ance, cost and featureoptimized U S B interface device. Com m unicating with a system microcontroller using a high speed general purpose parallel P D I U S B D 12 high-speed U S B periphe ral interface interface, it is easily integrated into existing systems, cutting down

ali 3606

Abstract: FZS1AL06 D-65205 78050 V ADC122S101 DP83848 LM5072 MCF5329 MCF532X COBRA5329KIT
Contextual Info: Dragonfire Reference Platform presented by EBV Elektronik Version 2 Dragonfire Reference Platform presented by EBV Elektronik Timed to coincide with the market launch of Freescale The DragonFire display kit can be connected directly to the Semiconductor’s DragonFire microprocessor-family MCF532x,

IC LM 258

Contextual Info: r = ± 7 Z S G S - T H O M S O N # M Q (M [iy i ïï[M O (D S l m i 5 8 , a - l m 2 5 8 , a L M 3 5 8 ,A -L M 2 9 0 4 -N E 5 3 2 LOW POWER DUAL OPERATIONAL AMPLIFIERS . INTERNALLY FREQUENCY COMPENSATED. • LARGE DC VOLTAGE GAIN : 100 dB ■ W IDE BANDWIDTH (unity gain : 1.1 MHz (tem­

SOT422A

Abstract: BLS3135-65
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SIH]H T BLS3135-65 Microwave power transistor P relim inary specification Philips Semiconductors 1999 A p r 28 PHILIPS Philips Semiconductors Preliminary specification Microwave power transistor BLS3135-65 PINNING - SOT422A FEATURES

1N5411

Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Contextual Info: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal

Contextual Info: DISCRETE SEMICONDUCTORS RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor

8870 dtmf decoder

Abstract: cmd 8870 dtmf 8870 DTMF circuit 65SC15 BD2000 dtmf 8870 DTMF DECODER 8870 bc7000 8870 dtmf 00-D7
Contextual Info: G65SC151 Standard Option c m d Microcircuits_ _ ADV-CMOS Communications Terminal Unit Telecommunication Microcomputer Features General Description • S ta n d a rd O p tio n to th e G 6 5S C 150 C o m m u n ic a tio n s T e rm in a l

l85c

Abstract: L 358 l358
Contextual Info: miCROUJAVE COmPOflEílTS DC to R F Mobile Switches MS 1GHz □ GENERAL FEATURES Mobile Switches (M S) are compact and inexpen­ sive coaxial switches designed for the inspection of □ the internal output of portable telephone terminals. i _i M A T ER IA L* F IN ISH

api 662

Abstract: im 358 micro P160R-XXXKS 222KS
Contextual Info: DC IN C CU REM RR E EN NTA T L m A BE R* IN DU ±1 CT 0% A N @ CE 1 0 (µ 0 H) kH z DC M RES AX I IM STA UM N C (O E hm s) CU R M RE AX N .( TR m A A TI DC NG ) Power Micro i Chip Inductors NU M P160R P160 DA SH Series SERIES P160 FERRITE CORE Physical Parameters

IN456

Abstract: 1n3321 1N3320B 1N3341B
Contextual Info: 1N 3 3 05 thru 1N 3350B and Microsemi Corp. SANTA ANA, CA j /ri,*,*,«« SCOTTSDALE, AZ / For more information call: / 1N4549B thru iM A C K ftB • 5 5 0 B 602 941-6300 FE A T U R E S SILICON 50 WATT ZENER DIODES • ZENER VOLTAGE 3.9 TO 200V • LOW ZENER IMPEDANCE

Contextual Info: MLL5913 thru MLL5956 Microsemi Corp. ? A-IV/I tub ftotiti experts 1V4 f t SCO rrSD ALE , 4 / h>i im*ie information call (61 2) 941-6300 D E S C R IP T IO N / F E A T U R E S LEADLESS GLASS ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT TECHNOLOGY • IDEAL FOR HIGH DENSITY MOUNTING

Contextual Info: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor

Contextual Info: DISCRETE SEMICONDUCTORS RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 19 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor

J122

Abstract: R358 D35B SAB10 8870 DTMF circuit D35B 60 G65SC150 G65SC151 DTMF 8870 BC4000
Contextual Info: G65SC151 Standard Option Microcircuits_ ADV-CMOS Communications Terminal Unit Telecommunication Microcomputer Features General Description • Standard O p tio n to the G65SC150 C o m m u n ica tio n s Term inal U nit (C TU ) • G enerates sign a ls c o m p a tib le w ith sw itche d telep h o ne

LM358 definition

Abstract: LM358S LM258 LM2904N-8 lm2904n LM358AM lm2904s LM358 drift voltage LM2904 LM358AN
Contextual Info: LM258/A, LM358/A, LM2904 DUAL OPERATIONAL AMPLIFIER DUAL OPERATIONAL AMPLIFIERS The LM 258 series consists of four independent, high gain, internally Frequency com pensated operational am plifiers w hich w ere designed specifically to operate from a single pow er supply over a w ide range

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor FEATURES D iffused em itter ballasting resistors providing excellent cu rre n t sharing