IN 3099 J Search Results

Contextual Info: 7 PART NO. EN G . NO. P O L A R IZ IN G P E G O P T IO N 3099-I2AI 3099-I2BI 50-29-1412 50-29-1462 WITH WITHOUT NOTES; 1. THIS HOUSING FOR USE WITH STANDARD .093/ 2.36 SERIES RECEPTACLES. 2. MATERIAL; I I- UNFILLED POLYESTER, 94V-0, COLOR-BLACK /£\ ONLY REQUIRED WHEN USING PARTS WITH OPTIONAL POLARIZING PEG.

3099P-1-103

Abstract: 3099P-1-500 potentiometer dual 3099P-1-102 3099P-1-203 3099P 3099P-1-205 3099P-1-502 trimpot 100 ohm 3099P-1-504
Contextual Info: TRIMPOT A D JU S T M E N T POTENTIOMETER Model 3099 In-Line P otentiom eter C erm et Element 3A " Long FEATURES Actual Size • Stan d ard D IP size TO-116 . • C om p atib le with D IP autom atic insertion equipm ent. • Se a le d to m eet M IL-R -22097 im m ersion

Contextual Info: HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY SARAM J d t) IDT70824S/L Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 4K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random

Contextual Info: HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) J d t) Integrated Device Technology, Inc. FEATURES: • • • • • H igh-speed access - M ilitary: 35/45ns (max.) - C om m ercial: 20/25/35/45ns (max.) Low -power operation

EOB-3 E 24

Abstract: "SLDC"
Contextual Info: " V : if Nf HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) jd t) IDT70824S/L Integrated Device Technology, Inc. DESCRIPTION: FEATURES: • • • • • • • • • • • • T h e ID T 7 0 8 2 4 is a high-speed 4K x 16-bit Sequential

Intel 82430

Abstract: IDT70824
Contextual Info: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 4K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random

Intel 82430

Abstract: IDT70824 IDT70824L IDT70824S G84-3
Contextual Info: HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)

PN-80-1

Abstract: G84 Package Intel 82430 IDT70824 IDT70824L IDT70824S IDT70824G
Contextual Info: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)

IDT70824

Abstract: IDT70824L IDT70824S 0824X
Contextual Info: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)

Intel 82430

Abstract: IDT70824 IDT70824L IDT70824S
Contextual Info: HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)

Intel 82430

Abstract: IDT70824
Contextual Info: HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY SARAM IDT70824S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 4K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random Access from the other port

Intel 82430

Abstract: IDT70824
Contextual Info: HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) IDT70824S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 4K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random

D1 PGA 478

Abstract: Intel 82430 saram idt
Contextual Info: HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)

IDT70824

Abstract: IDT70824L IDT70824S
Contextual Info: HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) IDT70824S/L Integrated Device Technology, Inc. FEATURES: • • • • • High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) • Low-power operation

2SC4493

Abstract: 2049B
Contextual Info: Ordering number: EN 3099 No.3099 _ 2 S C 4 4 9 3 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Features . High breakdown voltage • Small Cq]j • High reliability adoption of HVP process

Contextual Info: y r> HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) H / IDT70824S/L Integrated Device Technology, Inc. FEATURES: • • • • • High-speed access - Military: 3 5/4 5 n s (m ax.) - Com m ercial: 2 0 /2 5 /3 5 /4 5 n s (m ax.)

Contextual Info: S ÏN æ y HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Th e ID T 7 0 8 2 4 is a high-speed 4K x 16-bit Sequential Access Random Access M em ory (S A R A M ). T h e S A RA M

Contextual Info: HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) IDT70824S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • T h e ID T 7 082 4 is a high-speed 4K x 16-bit Sequential Access Random Access M em ory (S A R A M ). T h e SA RA M

029T

Abstract: A-3099-P6A A-3099-0605 A-3099-0607 A-3099-P6B A-3099-P6C A-3099-P6D C26000
Contextual Info: II 12 ORDER NO. ENG. NUMBER 9 10 TERMINAL LOCATION SEE CHART MAT'L PEG TYPE 7 8 PLATING (SEE CHART) DIA ‘A’ 6 1 PLATING CODE TERMINAL LOCATION CHART (M=MALE, F=FEMALE, B=BLANK) TERMINAL CIRCU IT LOCATION LOCATION 1 2 4 3 5 6 CODE 10-18-1061 A -3099-P6A

2SC4493

Abstract: transistor KT 209 2049C
Contextual Info: Ordering number:EN3099 NPN Triple Diffused Planar Silicon Transistor 2SC4493 High-Voltage Amplifier, High-Voltage Switching Applications Package Dimensions unit:mm 2049C [2SC4493] 10.2 4.5 8.8 1.3 20.9 1.6 11.5 • High breakdown voltage. · Small Cob. · High reliability Adoption of HVP process .

A-3099-P4

Abstract: A-3099-P4A A-3099-P4B A-3099-P4C A-3099-P4D A-3099-P4E A-3099-P4F A-3099-P4H A-3099-P4J A-3099-P4K
Contextual Info: II 12 PART NO. ENG. NUMBER 9 10 TERMINAL LOCATION MAT'L SEE CHART POLAR. PEG PLATING (SEE CHART) 7 8 TERMINAL LOCATION CHART (M=MALE, F=FEMALE, B=BLANK) 10-18-1041 A-3099-P4 A V -0 YES B 10-18-1042 A -3099-P4A B V-0 YES B TERMINAL LOCATION CODE 1 2 3 4

Contextual Info: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features * * High-speed access - Military: 35/45ns (max.) - Commercial:20125135145ns (max.) Low-power operation - IDT70824S Active: 775mW(typ.) Standby: 5mW (typ.)

A-3099-0901

Abstract: C26000 MOLEX assembly of location 5-03008 U2-I469
Contextual Info: II 12 PART NO. ENG. NUMBER 10-18-1090 A-3099-0901 A 9 10 TERMINAL LOCATION MAT'L SEE CHART V-0 POLAR. PEG PLATING (SEE CHART) YES B 7 8 6 TERMINAL LOCATION CHART (M=MALE, F=FEMALE, B=BLANK) TERMINAL LOCATION CODE A 1 2 3 1 UNPLATED CIRCUIT LOCATION M 3099

C26000

Contextual Info: 9 PART NO. ENG. NUMBER 10-18-1120 A-3099- 1201 A 10-18-1121 A-3099- 1202 B POLAR. PEG PLATING SEE CHART V-0 YES B V-0 YES B LOCATION MAT'L (SEE CHART) 7 8 1 3099 1 TERMINAL LOCATION CHART (M=MALE, F=FEMALE, B=BLANK) 1 2 3 4 5 6 7 8 9 10 II 12 A M M M M M