IN106 Search Results

OCX1601

Abstract: in107 OCX160 OCX256 IN118 rca 645 iN92 tms 1601
Contextual Info: OCX Register Programming Manual Revision 2.1 February 2003 Revision History Revision 1.0, March 2001—Preliminary Release. Revision 2.0, May 2002—Fairchild Semiconductor Preliminary Release. Revision 2.1, February 2003—Corrected references to OCX160.

N38 transistor

Abstract: w38 transistor AR33 crosspoint 256 x 256 ocx 256 E23 transistor AB-39
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports

Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions

Scan AV6

Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions

IN126P

Abstract: AA-38 AH36 AR24
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions

wiring diagrams POWER COMMAND Hmi 211

Abstract: bR2335 equivalent J2/wiring diagrams POWER COMMAND Hmi 211
Contextual Info: SEL-421 Relay Protection and Automation System Instruction Manual User’s Guide 20130627 *PM421-01-NB* 2001–2013 by Schweitzer Engineering Laboratories, Inc. All rights reserved. All brand or product names appearing in this document are the trademark or registered trademark of their respective holders. No SEL

CW02B10

Contextual Info: CW - High Energy www.vishay.com Vishay Dale Wirewound Resistors, High Energy, Silicone Coated, Axial Lead FEATURES • High continuous energy handling, > 106.5 J • High temperature silicone coating Available • Complete welded construction • Excellent stability in operation

Contextual Info: VBT3045C-E3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation

IN96

Contextual Info: 128-Channel Digital X-Ray Analog Front End AD8488 Data Sheet FEATURES GENERAL DESCRIPTION 128 integrator channels Correlated double sample error correction CDS Corrects for VOS and LF noise Power consumption per channel Normal: 11 mW Low power: 4 mW Low input leakage current: −1.5 pA typical

IN117

Abstract: aa36 in60p diode CORE i3 ARCHITECTURE diode ak38 AA34 crosspoint 256 x 256 ocx 256 in60p in75 iN92
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports

IN117

Abstract: in60p OCX256 IN104 TBGA792 crosspoint 256 x 256 IN126P
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions

Tokin

Abstract: c812 tokin capacitor C205F multilayer ceramic capacitor IE106ZY5U-C205M ceramic capacitor z5u tokin 100 Ceramic Capacitor 50V y5v making a phone case
Contextual Info: TOKI N SHE CORP I> T O b T b E b 0 0 0 1 0 5 6 flbb ÎHIP-TYPE HIGH-CAPACITANCE MULTILAYER CERAMIC CAPACITOR TOKin 5ed. Introduction Tokin is proud to present our new multilayer ceramic capacitor, which is Reflow type, featuring a lower profile and "chip-type" configuration designed especially for

Contextual Info: VSB2045-M3 www.vishay.com Vishay General Semiconductor Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . WIREWOUND RESISTORS CW - High Energy Wirewound Resistors, High Energy, Silicone Coated, Axial Lead KEY BENEFITS • • • • • • High continuous energy handling to 106.5 J High-temperature silicone coating

in78

Abstract: IN118 IN116 IN109 IN117 in76 IN103 MS-034 AAF-1 in107 IN104
Contextual Info: 128-Channel Digital X-Ray Analog Front End AD8488 Data Sheet FEATURES GENERAL DESCRIPTION 128 integrator channels Correlated double sample error correction CDS Corrects for VOS and LF noise Power consumption per channel Normal: 11 mW Low power: 4 mW Low input leakage current: −1.5 pA typical

mosfet 4800

Abstract: schematic diagram inverter 12v to 24v 30a schematic diagram inverter 500w USING MOSFET 4606 MOSFET INVERTER ltsx e3 mosfet driver ic mt 1389 de aot 110 optocoupler 4558 opamp schematic ic 4440 40w amplifier 12v LTPG e3
Contextual Info: May 2008 Product Selection Guide Operational Amplifiers Data Converters Linear Regulators Switching Regulators µModule DC/DC Converters Battery Chargers Hot Swap Interface Filters High Frequency Silicon Oscillators Comparators µP Supervisor References High

n37 transistor

Abstract: AH34 transistor crosspoint 256 x 256 ocx 256 w34 transistor AF39 IN125P U39-W39 AB-39 IN80P IN70N
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports

IN87N

Abstract: AK39 IN125P AB-35 in69p IN60N Aj36 IN122P AB-39 IN118p
Contextual Info: Preliminary Revised February 2003 OCX256L • OCX256P Crosspoint Switch Preliminary • 256 configurable I/O ports General Description The OCX256 SRAM-based devices are non-blocking 128 X 128 digital crosspoint switches and are available in LVDS (Low Voltage Differential Signaling) and LVPECL (Low

w34 transistor

Abstract: IN118 IN125 IN19IN20 AB-39
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

fairchild aa35

Abstract: Fairchild F8 A38 fairchild fairchild Af34 fairchild Af35 w38 transistor fairchild AG6 diode in60p OCX256 IN101P
Contextual Info: OCX256 Crosspoint Switch Advanced Datasheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions