IN754 Search Results

IN751a

Abstract: IN753a in752a in750A IN759A IN749A in758a IN755A IN757A IN756a
Contextual Info: Diodes and Rectifiers C ase Drawing No. mW Max. Pow er D issipa tion at 25°C (Volts) Norn. V oltage ±5% at 5m A (O ) Max. S lo p e Imp. at 5m A (%/"C) Typ. Temp. Coef. at 5m A 1S2030A S07 BB 400 30 200 -0 0 7 1S2033A S07 BB 400 3-3 120 -0 0 7 1S2036A

SBX-251C

Abstract: BPK-72 Bubble Memory BPK72 IN75463 Ultimodule sbx-251 sbx251
Contextual Info: APPLICATION NOTE AP-127 December 1982 »> \0 >& A ° «r^ •Intel Corporation, Inc., 1982 December 1962 ORDER NUMBER: 210300-001 6-64 AP-127 INTRODUCTION Intel has developed a new, comprehensive power-fail circuit that is incorporated into all Intel Bubble Board Memory pro­

axial zener diodes marking code c3v6

Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.

TSW 8088

Abstract: 7110A manual pulse generator hm BPK-72 Bubble Memory BPK72 7110a-1 microprocessors z 8088 I7220 IN75463 BPK70A
Contextual Info: in te f r a iy iM iD iM W BPK 70A 1MBIT BUBBLE MEMORY SUBSYSTEM BPK 70A-1 0 °C to 75°C BPK 70A-4 10°C to 55°C BPK 70A-5 - 2 0 °C to 85°C • 1 M bit 128K Bytes Non-volatile, Solid-state, Read/W rite Bubble Memory Subsystem ■ Contains Bubble Mem ory and all ICs

Zener Diode 10.5V, 0.5W

Contextual Info: LTC4354 Negative Voltage Diode-OR Controller and Monitor U FEATURES DESCRIPTIO • The LTC 4354 is a negative voltage diode-OR controller that drives two external N-channel MOSFETs. It replaces two Schottky diodes and the associated heatsink, saving power and area. The power dissipation is greatly reduced

intel 7114 bubble

Abstract: IN75463 7114 intel "bubble memory" AN7224 TA 7264 5v75 BPK-70 Bubble Memory bubble memory intel 7234
Contextual Info: O M F Ü K ß f lÄ T T O Ü K I BPK 5V74 4MBIT BUBBLE MEMORY SUBSYSTEM BPK 5V74-4 10°C To 55°C • 4 Mbit 512K Bytes Non-Volatile, Solid-state, Read/Write Bubble Memory Subsystem ■ Maximum Data Rate of 200K bit/sec with One Subsystem ■ Interfaces to Host Microprocessor

IRF3710

Abstract: IRF3710 MOSFET mosfet irf3710 3F smd transistor LTC4354 LTC4354CDDB LTC4354CS8 LTC4354IDDB LTC4354IS8 MBR10100
Contextual Info: LTC4354 Negative Voltage Diode-OR Controller and Monitor U FEATURES DESCRIPTIO • The LTC 4354 is a negative voltage diode-OR controller that drives two external N-channel MOSFETs. It replaces two Schottky diodes and the associated heatsink, saving power and area. The power dissipation is greatly reduced

negative voltage regulator, 48V

Abstract: IRF3710 LTC4354 LTC4354CDDB LTC4354CS8 LTC4354IDDB LTC4354IS8 MBR10100 irf3710 1A marking GB SOT 23
Contextual Info: LTC4354 Negative Voltage Diode-OR Controller and Monitor U FEATURES DESCRIPTIO • The LTC 4354 is a negative voltage diode-OR controller that drives two external N-channel MOSFETs. It replaces two Schottky diodes and the associated heatsink, saving power and area. The power dissipation is greatly reduced

IN2222A

Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll

mosfet irf3710

Abstract: IRF3710 GA49 irf3710 1A LTC4354IS8 LTC4354 LTC4354CDDB LTC4354CS8 LTC4354IDDB MBR10100
Contextual Info: LTC4354 Negative Voltage Diode-OR Controller and Monitor U FEATURES DESCRIPTIO • The LTC 4354 is a negative voltage diode-OR controller that drives two external N-channel MOSFETs. It replaces two Schottky diodes and the associated heatsink, saving power and area. The power dissipation is greatly reduced

IN5844 diode

Abstract: IN5844 IN751 Diode "IN5844" IN4742 diode in5844 IN4744 IN4732 IN4748 IN4118
Contextual Info: jemitronicf discrete devices SEMICONDUCTORS S em itronics Corp. ZENER DIODE CROSS REFERENCE GUIDE BY VOLTAGE vz 500mW 4Q0mW 400mW 500mW 250mW 250/ 400mW IN4678 IN4679 IN4680 IN4614 IN4615 IN4616 IN5985 IN4681 IN4617 IN5966 IN4682 IN4683 IN4616 IN4619 500mW

IN756

Contextual Info: 1N746 thru 1N 759A and 1N4370 thru 1N 4372A DO-7 Microsemi Corp. f Tne d ioae experts / S A N T A A N A . CA SC O TTSD ALE. A Z F o r m o r e in fo r m a t io n c a ll: 602 941-6300 1% and 2% V E R S IO N S “C ” and "D ” A V AILA B LE SILICON 400 mW

Contextual Info: LTC4354 Negative Voltage Diode-OR Controller and Monitor DESCRIPTION FEATURES n n n n n n n n n Controls N-Channel MOSFETs Replaces Power Schottky Diodes Less Than 1µs Turn-off Time Limits Peak Fault Current 80V Operation Smooth Switchover without Oscillation

IN752 zener diode

Abstract: IN659 IN965 in4938 IN752 IN751 in755 zener in758 in753 zener in753 zener diode
Contextual Info: FAIRCHILD SEMICONDUCTOR ~ai deT| 3*4t i b 74 00271470 a J 3469674 FAIRCHILD SEMICONDUCTOR FAIRCHILD I A Schlumberger Company 84D 2 7 4 7 8 1N658/FDLL658 General Purpose Diodes T o i -Q°\ PACKAG ES 1N658 FDLL658 • B V . . . 120 V MIN @ 100 *iA • VF . 1 . 0 V ( M A X ) @ 1 00 mA