INDUSTRIAL DEVICE, S22 Search Results

S228

Abstract: ELS-512SRWB/S228 14.22mm 512srw
Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDDS-512-011 REV: 1 Page: 1/5 0.56" Single Digit Displays ELS-512SRWB/S228 PART NO. : ECN : █ Features : █ Applications: ● Industrial standard size. ● Audio equipment ● Low power consumption. ● Instrument panels

ELD-305HWB

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : DDD-305-019 REV: 1.0 Page: 1/5 0.3" Dual Digit Displays MODEL NO : ELD-305HWB/S225 ECN : █ Features : █ Applications: ● Industrial standard size. ● Audio equipment ● Low power consumption. ● Instrument panels

class D power amplifier 6.78 MHz

Abstract: S860T
Contextual Info: S860T Vishay Telefunken BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications

S860T

Contextual Info: S860T Vishay Telefunken BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications

Contextual Info: S860T Vishay Telefunken BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications

557 sot-143 MARKING

Contextual Info: S860T Vishay Semiconductors BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications

S860T

Contextual Info: S860T Vishay Semiconductors BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications

Contextual Info: S860T Vishay Telefunken BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications

class D power amplifier 6.78 MHz

Abstract: Vishay Semiconductors
Contextual Info: S860T Vishay Semiconductors BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications

S860T

Contextual Info: vtsMAY _ S860T ▼ Vishay Telefunken BIPMIC - Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. ^ M Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications

b 57530

Abstract: 74183 117947 S860T 158951 57530
Contextual Info: S 860 T TELEFUNKEN Semiconductors BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications with

DIN 50016

Abstract: S2NG021 mcb design DC-13 13DC13
Contextual Info: S2K043 Safety relays - S2 series Contact expansion device for safty relays S2 series 4 delayed enabling current paths 2 signaling current paths 1 check-back current path For applications up to safety category 4 Stop category 0 Width 22.5mm Industrial design

S860T

Abstract: S-860
Contextual Info: S860T BIPMIC – Cascadable Silicon Bipolar Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose for narrow and broad band IF and RF amplifiers in commercial and industrial applications with low power consumption. This allows to build amplifiers

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device

C1C14

Abstract: Motorola AR 164
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field Effect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device

mrf5015

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device

S2NG021

Abstract: DIN 50016 DC-13
Contextual Info: S2KR403 Safety relays - S2 series Contact expansion device for safety relays S2 series 4 delayed enabling current paths 2 signaling current paths 1 check-back current path For applications up to safety category 4 Stop category 1 Width 22.5mm Industrial design

DIN 50016

Abstract: S2NG021 DC-13 Power cable 25mm2 6A mcb
Contextual Info: S2K043 Safety relays - S2 series Contact expansion device for safty relays S2 series 4 delayed enabling current paths 2 signaling current paths 1 check-back current path For applications up to safety category 4 Stop category 0 Width 22.5mm Industrial design

Nippon capacitors

Contextual Info: MOTOROLA MRF1507 Cancelled The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment.

MRF1518NT1

Abstract: A113 AN211A AN215A AN721 MRF1518 MRF1518T1
Contextual Info: Freescale Semiconductor Technical Data MRF1518 Rev. 6, 3/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1518NT1 MRF1518T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device

AN721

Abstract: MRF1513 zener diode z10 A113 AN211A AN215A MRF1513NT1 MRF1513T1 cgs diode
Contextual Info: Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1513NT1 MRF1513T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistor MRF5035 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device

MHZ50

Contextual Info: Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1513NT1 MRF1513T1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device

MRF1511

Contextual Info: Freescale Semiconductor Technical Data MRF1511 Rev. 3, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1511NT1 MRF1511T1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device