INFINEON Search Results

XPOSYS

Abstract: Germanium Transistor X-GOLD
Contextual Info: BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection Data Sheet Revision 3.2, 2010-06-30 RF & Protection Devices Edition 2010-06-30 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

XPOSYS

Abstract: gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb
Contextual Info: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

726-BGB741L7ESDE63

Abstract: MMIC marking code R bgb741l7esd e6327 BGB741L7 BGB741 GAIN/S21
Contextual Info: D a t a S h e e t , R e v . 1 . 0 , A p r i l 2 00 9 BGB741L7ESD E S D - R o b u s t a n d E a s y - T o - U s e B r o a d b a nd L N A MMIC RF & Protection Devices Edition 2009-04-17 Published by Infineon Technologies AG, 85579 Neubiberg, Germany Infineon Technologies AG 2009.

726-BGA622H6820

Abstract: marking BXs SOT343 lna Germanium power
Contextual Info: D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG,

PEB2255

Abstract: irs5 PXB4219E PXB4220 PXB4220E PXB4221 PXB4221E PXB4219 TINI microcontroller cards
Contextual Info: P re li mi na ry D ata S he et , DS 1, J ul y 20 01 IW E 8 In te r wo r k i n g E le m en t f or 8 E 1/ T1 L i ne s P XB 4 2 19 E /P X B 4 22 0 E/ P X B 42 21 E V er s i o n 3. 4 Da ta c o m N e v e r s t o p t h i n k i n g . Edition 2001-07 Published by Infineon Technologies AG,

TL205

Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's

DL04135

Contextual Info: HIGH EFFICIENCY RED Infineon D L04135/7135 DLG4137/7137 GREEN .43" Single Character DL04135/DLG4137 .68" Single Character DL07135/DLG7137 5 x 7 Dot Matrix Intelligent Display Devices with Mem ory/Decoder/Driver technologies D L 04 1 3 5 /4 1 37 D L 07 1 3 5 /7 1 37

Contextual Info: IL74 DUAL CHANNEL ILD74 QUAD CHANNEL ILQ74 SINGLE CHANNEL Infineon technologies Phototransistor Optocoupler FEATURES • 7400 Series T2L Com patible Dimensions in inches mm S ing le C hannel • Transfer Ratio, 35% Typical • Coupling Capacitance, 0.5 pF

tvs3v3l4u

Abstract: TVS3V3
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes TVS3V3L4U Low Capacitance ESD / Transient / Surge Protection Array TVS3V3L4U Data Sheet Revision 2.2, 2012-05-09 Final Power Management & Multimarket Edition 2012-05-09 Published by Infineon Technologies AG 81726 Munich, Germany

TLD5045

Abstract: TLD5045EJ led tail light pwm dimming running light 50nF capacitor diode by 127s smd diode EG - 413 PG-DSO-8-27 ST transistor 647s
Contextual Info: Infineon Power LED Driver TLD5045EJ 700mA High Integration - DC/DC StepDown Converter Datasheet Rev. 1.0, 2011-05-27 Automotive Power TLD5045EJ Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

BGM1033

Abstract: BGM1033N7 gps schematic diagram
Contextual Info: BGM1033N7 GPS and GLONASS Front-End Module Data Sheet Revision 3.2, 2011-07-18 RF & Protection Devices Edition 2011-07-18 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

Contextual Info: ii dB V 2 3 8 0 9 -C 8 -C 1 0 Infineon Multim ode 1300 nm LED Fast Ethernet/FDDI/ATM 170 MBd 1x9 Transceiver technologies D im ension s in m m inches PC board thickness (Lead c ro s s s e c tio n a nd s ta n d o ff size) (8.6 max) .170 m ax (10 max) .393 m ax

Contextual Info: 6N135 6N136 Infineon technology High-Speed 2.5 kV TRIOS Optocoupler FEATURES Is o la tio n T est V oltage: 2500 V RMS T T L C o m p a tib le Dimensions in inches mm] H igh B it R ates: 1.0 M b it/s H igh C o m m o n -M o d e In te rfe re n c e Im m u n ity

T5997

Abstract: 8522 LXT388 T5650 8527 305a ic 331 8522 datasheet BT8375 BT8376
Contextual Info: T1/E1 Interface Modules 8514-8527 Units matched to leading transceiver IC’s. Meets requirements for T1, E1, CEPT and PRI ISDN interface applications over an extended temperature range of -40°C to +85°C. IC MFG. CONEXANT CRYSTAL DALLAS EXAR INFINEON IC P/N

SC3B1

Abstract: BGF200 top marking c3 microphone filter
Contextual Info: Data Sheet, V2.1, Oct. 2006 BGF200 Microphone Filter and ESD Protection Small Signal Discretes Edition 2006-10-17 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

MGF4919G

Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
Contextual Info: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии

BGA614

Abstract: GPS05605 T056
Contextual Info: Data sheet, BGA614, Nov. 2003 BGA 614 Silicon Germanium B r o a d b a n d M M I C A m p li f i e r MMIC S ec ur e M obile S o l u ti o n s Silico n Discre te s N e v e r s t o p t h i n k i n g . Edition 2003-11-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

Contextual Info: Infineon Technologies AG - Infineon Technologies AG Seite 1 von 2 Infineon Homepage High-Speed ASSPs and Bipolar ASICs Please Select A Topic Products - High-Speed ASSPs and Bipolar ASICs Circuit Statistics General CIRCUS Description The circuit statistics gives an overview of the contents of the captured schematics and helps to decide whether

tda4864

Abstract: zero crossing detector mosfet MUR115 1N4937 ICE1PD165G IEC555 active harmonic filter infineon MOSFET parameter test
Contextual Info: Infineon Technologies preliminary ICE1PD165G Power Factor Controller + Cool- MOS: BoostSET IC for High Power Factor and low THD •=IC for sinusoidal line-current consumption •=Controller and CoolMOS within one package •=P-DSO-16-10 •=Power factor achieves nearly 1

n-channel 4336

Abstract: S2127
Contextual Info: ICs for Carradio Applications PLL Frequency Synthesizer, IF Counter, 7 bit ADC, 7 & 4 bit DAC with two channel digital alignment SDA 4336 Version V1 Target Specification 03.05.99 35 pages incl. this page • For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies

SICAN

Abstract: PEB3265 Common Mode Choke 85u0 PEF 4265 PEF 80912 SAFETY AWT 1 11 C513 PEB2023 PEF81902
Contextual Info: Da ta S h ee t, D S 1, N ov . 20 01 T - S M I NT I X 4B3 T S e co n d G e n . M od ul ar I S D N N T I nt e ll ige n t e X t e nd e d PEF 81902 Version 1.1 Wired C o m m u n i ca t i o n s N e v e r s t o p t h i n k i n g . Edition 2001-11-12 Published by Infineon Technologies AG,

8 pin ic chip 5270

Abstract: IC CHIP 5270 IC 4070 PEB22622 TTC-4070 527Q
Contextual Info: REV. Statu s PRELIMINARY 11/13/00 YS PRELIMINARY 1 CHANGED ADSL TO HDSL2. 11/27/00 YS PRELIMINARY 2 ADDED A.4 A.6. A.9. 12/ 21/00 YS HDSL2 transform er for use with Infineon Technologies H D SL2 IC chip set P E B 2 2 6 2 2 A. Electrical Specifications @ 25° C

PEB3265

Abstract: PEB4266 DUSLIC application notes PEB4266 PEB2091 C165H C166 PEB82902 PEB82912
Contextual Info: Product Brief The C165H is a new low-cost member of the Infineon Communication Controller family. The device combines the successful Infineon C166 16-bit full static core with four independent HDLC controllers, IOM -2 interface and 3-KByte of on-chip Dual-Port RAM. The C165H

main distribution frame

Abstract: pots to ADSL central splitter wiring 21789 transistor 21789 DSLAM configuration
Contextual Info: ADSL Business Case: Integrated Voice-Data chipset enables 50% linecard cost savings in voice-ADSL systems By J. Eiblmeier Product Marketing Infineon 1. Introduction Today's method of deploying ADSL service by using an analog POTS splitter to separate the ADSL signal from the base-band voice signal and then routing