INFINEON IGBT3 OHM Search Results

infineon power cycling igbt3

Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
Contextual Info: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

6.5kV IGBT

Abstract: 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode
Contextual Info: 6.5kV IGBT and FWD with Trench and VLD Technology for reduced Losses and high dynamic Ruggedness 1 2) 2) 3) 3) Thomas Duetemeyer , Josef-Georg Bauer , Elmar Falck , Carsten Schaeffer , G. Schmidt , 1) Burkhard Stemmer , 1 Infineon Technologies AG, Max-Planck-Straße 5, D-59581 Warstein Germany

3rd Generation of 1200V IGBT Modules

Abstract: transorb 200v transorb diode igbt failure infineon technologies formerly siemens siemens igbt infineon igbt3 1200v IGBT infineon IGBT structure infineon igbt3 ohm
Contextual Info: 3rd Generation of 1200V IGBT Modules M. Hierholzer, Th. Laska, M. Münzer, F. Pfirsch, C. Schäffer, Th. Schmidt IGBT-modules are the most frequently used semiconductors for power applications. The markets demand for higher power integration in one module is limited by the chip losses and the housings

Contextual Info: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV50H60T3G Full - Bridge NPT & Trench + Field Stop IGBT3 Power module 13 14 Q3 • Solar converter CR3 18 11 19 10 22 7 23 8 Q2 Q4 26 4 27 3 29 31 30 CoolMOS Q2, Q4: VCES = 600V ; IC = 49A @ Tc = 25°C Application Q1 CR1 Trench & Field Stop IGBT3 Q1, Q3:

Contextual Info: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM45RCT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM45RCT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM45BT3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM45BT3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45m max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70m max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM70BT3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C CoolMOS™ Q5: VDSS = 600V

Contextual Info: APTCV60HM45BT3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 45m max @ Tj = 25°C Application • Solar converter

Contextual Info: APTCV60HM45BC20T3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

APTGV50H60BT3G

Contextual Info: APTGV50H60BT3G Full – Bridge + boost chopper NPT & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q5: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C

Contextual Info: APTCV60HM70BT3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C CoolMOS™ Q5: VDSS = 600V

Contextual Info: APTGV50H60BT3G Full – Bridge + boost chopper NPT & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q5: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C

B32654-S0474

Abstract: OEA240 600V 300A igbt dc to dc boost converter b32654s0474k566 EICEDRIVER 2PS0900R17KE3-3G X1HB handbuch rohren 4PS0300R12KS4-3G b32654s
Contextual Info: PrimeSTACK Dokumentation und Betriebsanleitung Produkt: PrimeSTACK Anwendung: Strom- und Frequenzumrichter Revision: Rev. 2.3 30.Oktober 2008 Infineon Technologies AG 2006 – Alle Rechte vorbehalten Inhalt 1 Einleitung 4 2 Das PrimeSTACK im Überblick

Contextual Info: APTGV50H60BT3G Full – Bridge + boost chopper NPT & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q5: VDSS = 600V RDSon = 45m max @ Tj = 25°C

Contextual Info: APTCV60HM45BC20T3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 45m max @ Tj = 25°C Application • Solar converter