EIA-726
Abstract: EIA-747 Infineon moisture sensitive package MIPI design guideline spansion solder profile INFINEON trace code label EIA 783 samsung bluetooth ARM926EJ-S J-STD-033
Text: Recommendations for Printed Circuit Board Assembly Using Infineon PG-SON Packages Applic atio n Note DS1 October 2009 Wireless Solutions Edition 2009-10-06 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.
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Abstract: No abstract text available
Text: Infineon LITIX Power Multitopology LITIXTM Power DC/DC Controller IC TLD5095EL Infineon® LITIX™ Power Multitopology LITIXTM Power DC/DC Controller IC Data Sheet Revision 1.4 2015-03-11 Automotive Power Infineon® LITIX™ Power TLD5095EL Table of Contents
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TLD5095EL
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Untitled
Abstract: No abstract text available
Text: Edition 2014-04-01 Published by Infineon Technologies AG, 81726 Munich, Germany. 2014 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE
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265Vac;
230Vac;
ICE2QR4765G
PG-DSO-16/12
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2qs03g
Abstract: ICE2QS03
Text: Edition 2014-03-06 Published by Infineon Technologies AG, 81726 Munich, Germany. 2014 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE
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-10mA
ICE2QS03G
2qs03g
ICE2QS03
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Untitled
Abstract: No abstract text available
Text: Edition 2014-04-01 Published by Infineon Technologies AG, 81726 Munich, Germany. 2014 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE
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265Vac;
230Vac;
ICE2QR1765G
PG-DSO-16/12
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Untitled
Abstract: No abstract text available
Text: Edition 2014-04-01 Published by Infineon Technologies AG, 81726 Munich, Germany. 2014 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE
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265Vac;
230Vac;
ICE2QR0665G
PG-DSO-16/12
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MP 7721
Abstract: IEC6068-2-58 IPC 7351/7355 IPC-7351 to252 IPC 7355 JESD22-A111 JEDEC-J-STD-20 JESD22B-102 MICA WAFER J-STD-033
Text: Additional Information, DS1, March 2008 Recommendations for Assembly of Infineon TO Packages Edition 2008-03 Published by Infineon Technologies AG 81726 München, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
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IPC/EIA/JEDEC-J-STD-001
J-STD-033/-020
JESD22-B102
MP 7721
IEC6068-2-58
IPC 7351/7355
IPC-7351 to252
IPC 7355
JESD22-A111
JEDEC-J-STD-20
JESD22B-102
MICA WAFER
J-STD-033
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microwave transistor bfy193
Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG
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MWP-25
MWP-35
microwave transistor bfy193
BFY193
Micro-X marking "Fp"
GaAs Amplifier Micro-X Marking k
BAS40
BFY180
BFY405
BXY42
CFY25
micro-x 420
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SIEMENS MICROWAVE RADIO 8 GHz
Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG
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MWP-25
MWP-35
SIEMENS MICROWAVE RADIO 8 GHz
gaas fet micro-X Package marking
BAS70B-HP
x-band power transistor
x-band mmic lna
CGY40
MMIC Amplifier Micro-X marking D
MSC Microwave
gaas fet micro-X Package
INFINEON PART MARKING
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Untitled
Abstract: No abstract text available
Text: Data Sheet, V1.1, Aug. 2006 XC164TM 16-Bit Single-Chip Microcontroller with C166SV2 Core Microcontrollers Edition 2006-08 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006. All Rights Reserved. Legal Disclaimer
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XC164TM
16-Bit
C166SV2
XC164TM
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A01 MMIC
Abstract: No abstract text available
Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA614 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA614
neares20
GPS05605
OT343
A01 MMIC
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Untitled
Abstract: No abstract text available
Text: BGM1143N9 Front-End Module for Global Navigation Satellite Systems GNSS Data Sheet Revision 2.0, 2013-08-13 Preliminary RF & Protection Devices Edition 2013-08-13 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG
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BGM1143N9
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CROSS SEIKO
Abstract: toshiba onenand ARM1176JZ-STM Baw delay line tdk cross reference wildpasstm
Text: February 2008 NWR150 Low Insertion Loss BAW Filter for GPS Data Sheet Revision 2.4 Communication Solutions Edition 2008-02-11 Published by Infineon Technologies AG 81726 Munich, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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NWR150
NWR150
CROSS SEIKO
toshiba onenand
ARM1176JZ-STM
Baw delay line
tdk cross reference
wildpasstm
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Untitled
Abstract: No abstract text available
Text: TLV4946K, TLV4946-2K Value Optimized Hall Effect Latches for Industrial and Consumer Applications Datasheet Rev1.1, 2010-08-02 Sense and Control Edition 2010-08-02 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG
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TLV4946K,
TLV4946-2K
TLV4946K
TLV4946-2K
GPS09473
PG-SC59-3-5
PG-SC59-3-5
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IN5048
Abstract: Germanium Power Devices BGA614 Germanium Amplifier
Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA614 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA614
GPS05605
OT343
IN5048
Germanium Power Devices
BGA614
Germanium Amplifier
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PIMD3
Abstract: No abstract text available
Text: BGS22W2L10 DPDT Dual-Pole / Double-Throw Differential RF Switch Data Sheet Revision 1.4 - October 12, 2012 Power Management & Multimarket Edition October 12, 2012 Published by Infineon Technologies AG 81726 Munich, Germany c 2011 Infineon Technologies AG
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BGS22W2L10
TSLP-10-1-PO
TSLP-10-1
TSLP-10-1-FP
TSLP-10-1
TSLP-10-1-TP
PIMD3
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MIL-STD-1686A
Abstract: flatiron SC75 SCD80 smd tabellen INFINEON package tqfp PART MARKING 53063 label infineon lot number
Text: Application Support, Sep. 2002 Verarbeitungshinweise Notes on Processing Never stop thinking. Ausgabe 09.02 Edition 09.02 Herausgegeben von Infineon Technologies AG, St.-Martin-Strasse 53 81541 München Published by Infineon Technologies AG, St.-Martin-Strasse 53
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PIMD3
Abstract: No abstract text available
Text: BGS22WL10 DPDT Dual-Pole / Double-Throw Differential RF Switch Data Sheet Revision 1.2 - September 14, 2012 Power Management & Multimarket Edition September 14, 2012 Published by Infineon Technologies AG 81726 Munich, Germany c 2011 Infineon Technologies AG
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BGS22WL10
TSLP-10-1-PO
TSLP-10-1
TSLP-10-1-FP
TSLP-10-1
TSLP-10-1-TP
PIMD3
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SMD MARKING CODE f2
Abstract: No abstract text available
Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA231N7
SMD MARKING CODE f2
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Untitled
Abstract: No abstract text available
Text: ISOFACE ISO1H812G Galvanic Isolated 8 Channel High-Side Switch Datasheet Revision 2.4, 2013-01-31 Power Management & Multimarket Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
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ISO1H812G
PG-DSO-36
gps09181
PG-DSO36
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infineon C166 reliability report
Abstract: No abstract text available
Text: ISOFACE ISO1H811G Galvanic Isolated 8 Channel High-Side Switch Datasheet Revision 2.4, 2013-05-16 Power Management & Multimarket Edition 2013-05-16 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
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ISO1H811G
PG-DSO-36
gps09181
PG-DSO36
infineon C166 reliability report
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SMD Transistor Marking Code m12
Abstract: No abstract text available
Text: TLE4961-2M High Precision Automotive Hall Effect Latch Data Sheet Revision 1.0, 2013-01-19 Sense & Control Edition 2013-01-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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TLE4961-2M
TLE4961-2M
SMD Transistor Marking Code m12
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infineon C166 reliability report
Abstract: No abstract text available
Text: ISOFACE ISO1H815G Galvanic Isolated 8 Channel High-Side Switch Datasheet Revision 2.2, 2013-01-31 Power Management & Multimarket Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
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ISO1H815G
PG-DSO-36
gps09181
PG-DSO36
infineon C166 reliability report
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sae 1850 vpw
Abstract: sak-tc1775 P54 0A08 0439N
Text: Data Sheet, V1.2, May 2002 TC1775 Single-Chip Microcontroller INFN S05039 -î-f • 32-Bit icrocontrollers Infineon Never stop 11 INFNS05039 Edition 2002-05 P ublished by Infineon Techno log ies AG, S t.-M artin-S trasse 53, D-81541 M ünchen, Germ any Infineon Techno log ies AG 2002.
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TC1775
32-Bit
S05039
INFNS05039
D-81541
-X-X-7600
DS05022
sae 1850 vpw
sak-tc1775
P54 0A08
0439N
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