INFINEON MARKING Search Results
INFINEON MARKING Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
5962-8950303GC |
![]() |
ICM7555M - Dual Marked (ICM7555MTV/883) |
![]() |
![]() |
|
MG80C186-10/BZA |
![]() |
80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
![]() |
![]() |
|
54ACT244/B2A |
![]() |
54ACT244/B2A - Dual marked (5962-8776001B2A) |
![]() |
![]() |
|
ICM7555MTV/883 |
![]() |
ICM7555MTV/883 - Dual marked (5962-8950303GA) |
![]() |
![]() |
|
MQ80186-8/BYC |
![]() |
80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) |
![]() |
![]() |
INFINEON MARKING Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
EIA-726
Abstract: EIA-747 Infineon moisture sensitive package MIPI design guideline spansion solder profile INFINEON trace code label EIA 783 samsung bluetooth ARM926EJ-S J-STD-033
|
Original |
||
Contextual Info: Infineon LITIX Power Multitopology LITIXTM Power DC/DC Controller IC TLD5095EL Infineon® LITIX™ Power Multitopology LITIXTM Power DC/DC Controller IC Data Sheet Revision 1.4 2015-03-11 Automotive Power Infineon® LITIX™ Power TLD5095EL Table of Contents |
Original |
TLD5095EL | |
Contextual Info: Edition 2014-04-01 Published by Infineon Technologies AG, 81726 Munich, Germany. 2014 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE |
Original |
265Vac; 230Vac; ICE2QR4765G PG-DSO-16/12 | |
2qs03g
Abstract: ICE2QS03
|
Original |
-10mA ICE2QS03G 2qs03g ICE2QS03 | |
Contextual Info: Edition 2014-04-01 Published by Infineon Technologies AG, 81726 Munich, Germany. 2014 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE |
Original |
265Vac; 230Vac; ICE2QR1765G PG-DSO-16/12 | |
Contextual Info: Edition 2014-04-01 Published by Infineon Technologies AG, 81726 Munich, Germany. 2014 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE |
Original |
265Vac; 230Vac; ICE2QR0665G PG-DSO-16/12 | |
sae 1850 vpw
Abstract: sak-tc1775 P54 0A08 0439N
|
OCR Scan |
TC1775 32-Bit S05039 INFNS05039 D-81541 -X-X-7600 DS05022 sae 1850 vpw sak-tc1775 P54 0A08 0439N | |
MP 7721
Abstract: IEC6068-2-58 IPC 7351/7355 IPC-7351 to252 IPC 7355 JESD22-A111 JEDEC-J-STD-20 JESD22B-102 MICA WAFER J-STD-033
|
Original |
IPC/EIA/JEDEC-J-STD-001 J-STD-033/-020 JESD22-B102 MP 7721 IEC6068-2-58 IPC 7351/7355 IPC-7351 to252 IPC 7355 JESD22-A111 JEDEC-J-STD-20 JESD22B-102 MICA WAFER J-STD-033 | |
microwave transistor bfy193
Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
|
Original |
MWP-25 MWP-35 microwave transistor bfy193 BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420 | |
SIEMENS MICROWAVE RADIO 8 GHz
Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
|
Original |
MWP-25 MWP-35 SIEMENS MICROWAVE RADIO 8 GHz gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING | |
Contextual Info: Data Sheet, V1.1, Aug. 2006 XC164TM 16-Bit Single-Chip Microcontroller with C166SV2 Core Microcontrollers Edition 2006-08 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2006. All Rights Reserved. Legal Disclaimer |
Original |
XC164TM 16-Bit C166SV2 XC164TM | |
A01 MMICContextual Info: Data Sheet, Rev. 2.1, Sept. 2011 BGA614 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please! |
Original |
BGA614 neares20 GPS05605 OT343 A01 MMIC | |
Contextual Info: BGM1143N9 Front-End Module for Global Navigation Satellite Systems GNSS Data Sheet Revision 2.0, 2013-08-13 Preliminary RF & Protection Devices Edition 2013-08-13 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG |
Original |
BGM1143N9 | |
CROSS SEIKO
Abstract: toshiba onenand ARM1176JZ-STM Baw delay line tdk cross reference wildpasstm
|
Original |
NWR150 NWR150 CROSS SEIKO toshiba onenand ARM1176JZ-STM Baw delay line tdk cross reference wildpasstm | |
|
|||
Contextual Info: Data Sheet, Rev. 1.0, September 2007 TLE4966K High Precision Hall-Effect Switch with Direction Detection Sensors Edition 2007-09 Published by Infineon Technologies AG 81726 München, Germany 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer |
Original |
TLE4966K GPX09300 HLG09283 | |
IN5048
Abstract: Germanium Power Devices BGA614 Germanium Amplifier
|
Original |
BGA614 GPS05605 OT343 IN5048 Germanium Power Devices BGA614 Germanium Amplifier | |
PIMD3Contextual Info: BGS22W2L10 DPDT Dual-Pole / Double-Throw Differential RF Switch Data Sheet Revision 1.4 - October 12, 2012 Power Management & Multimarket Edition October 12, 2012 Published by Infineon Technologies AG 81726 Munich, Germany c 2011 Infineon Technologies AG |
Original |
BGS22W2L10 TSLP-10-1-PO TSLP-10-1 TSLP-10-1-FP TSLP-10-1 TSLP-10-1-TP PIMD3 | |
MIL-STD-1686A
Abstract: flatiron SC75 SCD80 smd tabellen INFINEON package tqfp PART MARKING 53063 label infineon lot number
|
Original |
||
PIMD3Contextual Info: BGS22WL10 DPDT Dual-Pole / Double-Throw Differential RF Switch Data Sheet Revision 1.2 - September 14, 2012 Power Management & Multimarket Edition September 14, 2012 Published by Infineon Technologies AG 81726 Munich, Germany c 2011 Infineon Technologies AG |
Original |
BGS22WL10 TSLP-10-1-PO TSLP-10-1 TSLP-10-1-FP TSLP-10-1 TSLP-10-1-TP PIMD3 | |
SMD MARKING CODE f2Contextual Info: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer |
Original |
BGA231N7 SMD MARKING CODE f2 | |
Contextual Info: ISOFACE ISO1H812G Galvanic Isolated 8 Channel High-Side Switch Datasheet Revision 2.4, 2013-01-31 Power Management & Multimarket Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. |
Original |
ISO1H812G PG-DSO-36 gps09181 PG-DSO36 | |
infineon C166 reliability reportContextual Info: ISOFACE ISO1H811G Galvanic Isolated 8 Channel High-Side Switch Datasheet Revision 2.4, 2013-05-16 Power Management & Multimarket Edition 2013-05-16 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. |
Original |
ISO1H811G PG-DSO-36 gps09181 PG-DSO36 infineon C166 reliability report | |
SMD Transistor Marking Code m12Contextual Info: TLE4961-2M High Precision Automotive Hall Effect Latch Data Sheet Revision 1.0, 2013-01-19 Sense & Control Edition 2013-01-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer |
Original |
TLE4961-2M TLE4961-2M SMD Transistor Marking Code m12 | |
infineon C166 reliability reportContextual Info: ISOFACE ISO1H815G Galvanic Isolated 8 Channel High-Side Switch Datasheet Revision 2.2, 2013-01-31 Power Management & Multimarket Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. |
Original |
ISO1H815G PG-DSO-36 gps09181 PG-DSO36 infineon C166 reliability report |