INFRARED 450 NM Search Results

Contextual Info: www.Amprobe.com IR-450 Pocket Infrared Thermometer 3-in-1 Infrared Thermometer, Laser Pointer, and Flashlight A must have tool for everyday applications, the Amprobe 3-in-1 Pocket Infrared Thermometer, Laser Pointer, and LED Flashlight offers a uniquely small and convenient

Contextual Info: Si PHOTODIODES S6428, S6429, S6430 HAMAMATSU Single color sensors FEATURES • For RGB red, green, and blue detection S6428: for blue (A,p=450 nm) S6429: for green (A.p=550 nm) S6430: for red (A.p=600 nm) • Non-senstivity in infrared region • Plastic packages: (6x8 mm)

LED740-66-16100

Abstract: 740nm high intensity IR led
Contextual Info: LED740-66-16100 TECHNICAL DATA SUPER HIGH POWER INFRARED LED Structure: 16 power LED chips, 4 x 4 parallel array Peak Wavelength: typ. 740 nm Optical Output Power: typ. 450 mW cw @ 1.4 A Package: TO-66 with silicone + epoxy resin 1 = anode 2 = cathode Absolute Maximum Ratings Tc = 25°C

BPW16N

Abstract: CQY36N
Contextual Info: CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : ∅ 1.8 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 55°

CQY37N

Abstract: 7922 diode BPW17 Infrared Emitting Diode BPW17N
Contextual Info: CQY37N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : ∅ 1.8 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 12°

BPW17N

Abstract: CQY37N
Contextual Info: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 12° • Low forward voltage

Contextual Info: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 12° • Low forward voltage

12109

Contextual Info: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 12° • Low forward voltage

Contextual Info: CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 55°

Contextual Info: CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 55°

Contextual Info: CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 55°

Contextual Info: LED nm Chart Peak Wavelenght Chip Material Typical Forward Voltage @ 20mA Radiation Color 940 G q AIAs 1.2 Infrared 880 GaAIAs/GaAs 1.3 Infrared 850 GaAIAs 2.0 Infrared 830 G q AIAs 1.8 Infrared 697 GaP 2.0 Deep Red 660 G q AIAs 1.8 Ultra Red 650 GaAsP 1.7

TSSF4500

Contextual Info: TSSF4500 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 4.5 x 4 x 4.8 • Peak wavelength: λp = 890 nm

TSSF4500

Contextual Info: TSSF4500 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 4.5 x 4 x 4.8 • Peak wavelength: λp = 890 nm

GPLY6724

Abstract: OHLA0687
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4252 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung

Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4252 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung

Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung

GPLY6880

Abstract: OHLA0687
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung

OSRAM IR emitter

Abstract: infrared temperature measure datasheet LED infrared high power infrared LEd infrared LED 850 nm LED ir led IR LED infrared led 60825-1 IEC 62471 osram
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung

GPLY6724

Abstract: OHLA0687
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4252 Nicht für Neuentwicklungen / Not for new designs Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung

Q65110A2467

Abstract: GPLY6880
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung • Kurze Schaltzeiten • High Power Infrared LED

Contextual Info: TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • 21061 Package type: leaded Dimensions: T-1¾ ∅ 5 mm Peak wavelength: λp = 870 nm High reliability

PP506-1

Abstract: pp-506-1 DN304 "Co Sensor" CN106 PP506 PP701 BN202 CN501 KR311
Contextual Info: •SU PER INTENSITY VISIBLE LED I INFRARED LED I PHOTO DETECTOR ■ Stanley super-intensity visible and infrared LEDs 660 nm to 925 nm are suitable as light sources for optical comm unications, bar-code readers and sensors. The package of the [ID -311, CD-511 and □□-1011 series used for light sourcing and reception can be easily combined with

SFH4255

Abstract: GPLY6880
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung • Kurze Schaltzeiten • High Power Infrared LED