INFRARED 980 Search Results

Contextual Info: TLN1108 T11 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN1108(T11) Unit: mm ○ Infrared LED for Space-Optical-Transmission ○ Light Source for Infrared Cameras ○ Opto-Electronic Switches • Surface-mount devices • Package size • High radiant power : PO = 70mW (typ.) @100mA

Contextual Info: T O SH IB A TLN103A TOSHIBA INFRARED LED GaAs INFRARED EMITTER T L N10 3A Unit in mm INFRARED LED FOR PHOTO SENSOR OPTO-ELECTRONIC SWITCH 0 3 . 0 ± 0 .3 SELECTOR TAPE, CARD READERS INFRARED RAYS APPLIED EQUIPMENT Wide half value angle : B \ = ±80° TYP.

Contextual Info: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm

Contextual Info: Technical Data Sheet Top Infrared LED IR67-21C Features ․Compatible with infrared and vapor phase reflow solder process. ․Low forward voltage. ․View angle 120° ․Pb free Descriptions ․IR67-21C is an infrared emitting diode in miniature SMD package

LN189L

Contextual Info: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical

Contextual Info: TLN108 F TOSHIBA Infrared LED GaAs Infrared Emitter TLN108(F) Lead Free Product Opto−Electronic Switches Tape And Card Readers Equipment Using Infrared Transmission Unit: mm • TO−18 metal package • High radiant intensity: IE = 20 mW/sr (typ.) •

TLN102

Contextual Info: TLN102 F TOSHIBA Infrared LED GaAs Infrared Emitter TLN102(F) Lead Free Product Unit: mm Opto−Electronic Switches Equipment Using Infrared Transmission • Wide half value angle: θ1/2 = ±31° (typ.) • Excellent radiant−intensity linearity and modulation by pulse

TOSHIBA N108

Abstract: TLN108 TPS601A
Contextual Info: TLN108 F TOSHIBA Infrared LED GaAs Infrared Emitter TLN108(F) Lead Free Product Opto−Electronic Switches Unit: mm Tape And Card Readers Equipment Using Infrared Transmission • TO−18 metal package • High radiant intensity: IE = 20 mW/sr (typ.) •

ELC-1300-25

Abstract: 6605 SP EPD-550 EPD-660-5 SMD A1W ultraviolet sensor flame 2x430 elj-660-225 ELJ-810-248 ELC-630-13
Contextual Info: Chips ♦ visible ♦ infrared ♦ special design AutoSelective Photodiodes ♦ ultraviolet ♦ visible ♦ infrared LEDs, SMDs in different designs ♦ visible ♦ infrared ♦ high-power ♦ high-speed Type Designation System LED Chips: L C 1234 Light emitting

LN162S

Abstract: GaAs 1000 nm Infrared Emitting Diode
Contextual Info: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :

LN189S

Contextual Info: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical

Contextual Info: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 3.75±0.3 • Features 12.5 min. • High-power output, high-efficiency: PO = 3.5 mW typ. • Infrared light emission close to monochromatic light:

LN162S

Contextual Info: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :

LN189S

Contextual Info: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical

LN189L

Contextual Info: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical

infrared detectors

Abstract: Infrared Emitting Diode LNA2601L
Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency Light emitting spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : XP = 950 nm

GaAs 850 nm Infrared Emitting Diode

Abstract: Infrared Emitting Diode LN52
Contextual Info: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm Features High-power output, high-efficiency : PO = 6 mW typ. Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm

AP 1100 R1

Abstract: LN58
Contextual Info: Panasonic Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency : P0 = 3.5 mW typ. « Light emitting spectrum suited for silicon photodetectors a Infrared light emission close to monochromatic light :

LN52

Contextual Info: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm Features High-power output, high-efficiency : PO = 6 mW typ. Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm

IR42-21C

Contextual Info: Technical Data Sheet 1.8mm Round Subminiature Infrared LED IR42-21C Features ․Compatible with infrared and vapor phase reflow solder process. ․Low forward voltage ․Good spectral matching to Si photodetector ․Pb free Descriptions ․IR42-21C is an infrared emitting diode in miniature SMD

Contextual Info: Panasonic Infrared Light Emitting Diodes LN162S G aAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 3.5 mW typ. • Infrared light emission close to monochromatic light : A,P = 950 nm (typ.)

RLTMDL_980_1-2000MW

Contextual Info: RLTMDL-980 1-2000 mW Infrared Laser Diode Modul Infrared diode laser module at 980nm featuring compact size, long lifetime, low cost and easy operation. RLTMDL-980 is widely used in measurement, communication, spectrum analysis, etc. Specifications Wavelength

TLN233

Contextual Info: TLN233 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN233 Infrared LED for Space-Optical-Transmission Unit: mm • High radiant intensity: 80 mW/sr typ. at IF = 50 mA • Half-angle value: θ • A light source for remote control • Wireless AV-signal transmission purpose

Contextual Info: Panasonic Infrared Light Emitting Diodes LN54 G aAs Infrared Light Emitting Diode Unit : mm For optical control systems • Features • High-power output, high-efficiency : PQ = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to monochromatic light :