INFRARED EMITTING DIODE TO18 Search Results
INFRARED EMITTING DIODE TO18 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUZ30V |
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Zener Diode, 30 V, USC |
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CUZ24V |
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Zener Diode, 24 V, USC |
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CUZ36V |
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Zener Diode, 36 V, USC |
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CUZ20V |
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Zener Diode, 20 V, USC |
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CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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INFRARED EMITTING DIODE TO18 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: N E C ELECTRONICS INC 30E D • h42752S 005=^44 Ô ■ LIGHT EMITTING T-M/-U DIODE SE301A GaAs INFRARED EMITTING DIODE INDUSTRIAL USE DESCRIPTION The SE301A is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on a TO-18 hermetically sealed header |
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h42752S SE301A SE301A 940nm. M27525 | |
SE301A
Abstract: 30mWI
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h42752S SE301A SE301A 940nm, T-41-11 ta-259c) AM81ENT 30mWI | |
Contextual Info: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high radiant intensity without external optics. |
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TSTA7300 TSTA7300 2002/95/EC 2002/96/EC 18-Jul-08 | |
TSTA7300Contextual Info: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high radiant intensity without external optics. |
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TSTA7300 TSTA7300 2002/95/EC 2002/96/EC 08-Apr-05 | |
OLD222Contextual Info: OKI electronic components OLD222_ GaAs infrared Light Emitting Diode GENERAL DESCRIPTION The OLD222 is a high-output GaAlAs infrared light emitting diode sealed with a glass lens in a To18 case. Its light emission wavelength peaks at 910 ran. Because of its high reliability, the OLD222 |
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OLD222_ OLD222 100mA OLD222 | |
Contextual Info: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high radiant intensity without external optics. |
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TSTA7300 TSTA7300 2002/95/EC 2002/96/EC 08-Apr-05 | |
Contextual Info: K2P0Ült>-27-32 O K I electronic components OLP222 H_ GaAIAs Infrared Light Emitting Diode with Non-Spherical Surface Lens GENERAL DESCRIPTION The OLD222H is a high-output GaAIAs infrared light emitting diode sealed with a glass lens in a |
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OLP222 OLD222H OLD222H | |
Contextual Info: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high radiant intensity without external optics. |
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TSTA7300 TSTA7300 2002/95/EC 2002/96/EC D-74025 08-Mar-05 | |
Contextual Info: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very high radiant intensity without external optics. |
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TSTA7100 TSTA7100 2002/95/EC 2002/96/EC 08-Apr-05 | |
TSTA7100Contextual Info: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very high radiant intensity without external optics. |
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TSTA7100 TSTA7100 2002/95/EC 2002/96/EC D-74025 08-Mar-05 | |
Contextual Info: TSTA7500 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its flat glass window makes it ideal for use with external optics. |
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TSTA7500 TSTA7500 2002/95/EC 2002/96/EC D-74025 08-Mar-05 | |
Contextual Info: TSTA7500 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its flat glass window makes it ideal for use with external optics. |
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TSTA7500 TSTA7500 2002/95/EC 2002/96/EC 08-Apr-05 | |
TSTA7100Contextual Info: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very high radiant intensity without external optics. |
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TSTA7100 TSTA7100 2002/95/EC 2002/96/EC 08-Apr-05 | |
TSTA7500Contextual Info: TSTA7500 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its flat glass window makes it ideal for use with external optics. |
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TSTA7500 TSTA7500 2002/95/EC 2002/96/EC 08-Apr-05 | |
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Contextual Info: OKI electronic components OLP124 _ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD124 is a high-output GaAs infrared light emitting diode sealed with a transparent resin in a TO-18 metal case. Its light emission wavelength peaks at 940 nm. Because of its high reliability, the |
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OLP124 OLD124 OLD124 | |
Contextual Info: AUK CORP. Infrared Emitting Diode KFL-1ML-N Description The KFL-1ML-N is high power, wide beam angle GaAlAs infrared emitting diode with TO-18 metal stem and clear epoxy lens. this device is relatively low-cost compared to TO-18 can type devices. Pin Connection |
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850nm | |
old123Contextual Info: OKI electronic components GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD123 is a high-output GaAs infrared light emitting diode sealed with a flat glass in a TO-18 metal case. Its light emission wavelength peaks at 940 nm. Beause of its high reliability, the OLD! 23 |
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OLD123 OLD123 | |
Contextual Info: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a very high radiant intensity without external optics. |
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TSTS7100 TSTS710. 2002/95/EC 2002/96/EC 08-Apr-05 | |
TSTS710Contextual Info: TSTS7100 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a very high radiant intensity without external optics. |
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TSTS7100 TSTS710. 2002/95/EC 2002/96/EC D-74025 08-Mar-05 TSTS710 | |
TSTS730
Abstract: TSTS7300
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TSTS7300 TSTS730. 2002/95/EC 2002/96/EC 08-Apr-05 TSTS730 TSTS7300 | |
TSTS7100
Abstract: TSTS710
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TSTS7100 TSTS710. 2002/95/EC 2002/96/EC 08-Apr-05 TSTS7100 TSTS710 | |
TSTA7500Contextual Info: TSTA7500 Vishay Semiconductors GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its flat glass window makes it |
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TSTA7500 TSTA7500 D-74025 20-May-99 | |
Contextual Info: TSTS7300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a high radiant intensity without external optics. |
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TSTS7300 TSTS730. 2002/95/EC 2002/96/EC 08-Apr-05 | |
TSTS730
Abstract: TSTS7300
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TSTS7300 TSTS730. 2002/95/EC 2002/96/EC D-74025 08-Mar-05 TSTS730 TSTS7300 |