INFRARED PHOTOTRANSISTOR 302 Search Results
INFRARED PHOTOTRANSISTOR 302 Result Highlights (4)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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LMP91050MMX/NOPB |
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Configurable AFE for Nondispersive Infrared (NDIR) Sensing Applications 10-VSSOP -40 to 105 |
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TIR1000IPWR |
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Standalone IrDA Encoder & Decoder 8-TSSOP -40 to 85 |
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OPT3004DNPR |
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Digital ambient light sensor (ALS) with increased angular IR rejection 6-USON -40 to 85 |
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TIR1000IPSR |
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Standalone IrDA Encoder & Decoder 8-SO -40 to 85 |
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INFRARED PHOTOTRANSISTOR 302 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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be 303Contextual Info: Optoisolator Specifications SL5511 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e SL5511 consists o f a gallium arsenide, infrared em itting diode coupled with a silicon phototransistor in a dual in-line package. T h e SL5511 com plies with UTE requirem ents as per UTE C96-551 ADD2. |
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SL5511 SL5511 C96-551 be 303 | |
Contextual Info: KP3020 Series 8PIN PHOTOTRANSISTOR PHOTOCOUPLER cosmo Schematic Description 8 7 6 5 1 2 3 4 The KP3020 series consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a phototransistor detector. They are packaged in an 8-pin DIP package and available in wide-lead spacing |
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KP3020 5000Vrms UL1577 69P12001 | |
c217
Abstract: MOC215
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MOC215-217 MOC215 MOC216 MOC217 96M7M) 14-Jun-96 14-Jun-% c217 | |
MOC211
Abstract: OC211 OC212M
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MOC211-213 MOC211 eth10. 14-Jun-96 OC211 OC212M | |
Infrared Phototransistor 302
Abstract: LTR-5576D 302 phototransistor datasheet LTE-302-M LTE-309 LTR-5986DH phototransistor 302 302 phototransistor if lte LTE-302
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LTE-302-M/LTE-309 LTR-5576D/ LTR-5986DH LTE-302 LTE-302-M LTE-302-M/LTE-309 LTE-309 Infrared Phototransistor 302 LTR-5576D 302 phototransistor datasheet LTE-302-M LTE-309 phototransistor 302 302 phototransistor if lte | |
HOA1876
Abstract: SD1410 SD1440 SE1450 phototransistor 302
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HOA1876 INFRA-30 HOA1876 HOA1876- SE1450, SD1440, SD1410. SD1410 SD1440 SE1450 phototransistor 302 | |
H0A1876Contextual Info: HOA1876 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Wide lead spacing . Wide operating temperature range -55°C to +100°C . 0.200 in.(5.08 mm) slot width DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The HOA1876 series consists of an infrared emitting |
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HOA1876 HOA1876 HOA1876-001, HOA1876-003) SE1450, SD1440, SD1410. H0A1876 | |
Contextual Info: TCED1100 G up to TCED4100 Vishay Telefunken T Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arse nide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package. |
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TCED1100 TCED4100 TCED1100/ TCED2100/ TCED4100 16-lead 11-Ja TCED2100 | |
PHOTOTRANSISTOR 3 LEGSContextual Info: 3875 08 1 0 1 E 19776 G E SOLID STATE Optoelectronic Specifications - HARRIS SEMICOND SECTOR 37E D S 4302271 0G2723Ô fl • HAS Photon Coupled Isolator SL5511 The GE Solid State SL551I consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. The GE |
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0G2723Ã SL5511 SL551I SL5511 C96-551 92CS-42662 92CS-428S1 PHOTOTRANSISTOR 3 LEGS | |
Contextual Info: Optoisolator Specifications SL5511 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e SL5511 consists o f a gallium arsenide, in fra re d em itting diode co u p led with a silicon p h o to tra n sisto r in a d u al in-line package. T h e |
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SL5511 SL5511 C96-551 | |
FR 309 diode
Abstract: Infrared Phototransistor 302 2D05 LTR-5888
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LTE-302-M/LTE-309 CTR-5576D/LTR5888DH LTE-309 LTE-302-M/LTE-309 LTE-302-M LTE-309 FR 309 diode Infrared Phototransistor 302 2D05 LTR-5888 | |
photon coupled interrupter 3101
Abstract: photon coupled interrupter photon coupled interrupter nte 3100 npn phototransistor npn photo interrupter module darlington IR phototransistor Si pin photodiode module npn 940 T018 T046
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650nW 150nW b4315S^ 0003hl3 photon coupled interrupter 3101 photon coupled interrupter photon coupled interrupter nte 3100 npn phototransistor npn photo interrupter module darlington IR phototransistor Si pin photodiode module npn 940 T018 T046 | |
ic 67a smdContextual Info: Honeywell Infrared Components Ceramic Discrete Surface Mount Emitters and Detectors FEATURES • Small package size • Glass lensed optics for efficient optical coupling • Upright or inverted mounting capability • Low profile, small size for flexible layout of multiple |
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006445-2-EN ic 67a smd | |
honeywell smd2440-001 ceramic phototransistor
Abstract: honeywell smd2440-011 ceramic phototransistor sme2470-021 SMD2440-001 KIA 431B datasheet SMD2420 SMD2440-021 SME2470-001 SMD2440-011 SMD2420-021
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006445-2-EN honeywell smd2440-001 ceramic phototransistor honeywell smd2440-011 ceramic phototransistor sme2470-021 SMD2440-001 KIA 431B datasheet SMD2420 SMD2440-021 SME2470-001 SMD2440-011 SMD2420-021 | |
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Contextual Info: Reflective Transducer STRT 3020 Electrical and Optical Specifications Absolute Maximum Ratings at Ta = 25°C Package Operating Temperature, Topr. Storage Temperature, Ts tg . ‘ Soldering Temperature, Tsotd. Power Dissipation, Pd. |
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CI2271CÃ | |
TRANSISTOR 2SC 950
Abstract: phototransistor npn NPN Transistor 5V DARLINGTON transistor 2sc nte 3122 SI 3105 A
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650nW TRANSISTOR 2SC 950 phototransistor npn NPN Transistor 5V DARLINGTON transistor 2sc nte 3122 SI 3105 A | |
Contextual Info: 0 .OPTEK Product Bulletin OPB 68O July 1996 Slotted Optical Flag Switch Type OPB68O Features • • • • Phototransistor output Mechanical switch replacement Printed circuit board mounting Enhanced signal to noise ratio Description The OPB 68O consists of an NPN |
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OPB68O TfiS60 Q00302S | |
grayhill 654321
Abstract: encoder 654321 654321 grayhill 62AXX-XX-XXXC 62B22 GRAYHILl 87654321 nyogel 774L
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60525-5997n-lbs. 61MXX-XX-XX grayhill 654321 encoder 654321 654321 grayhill 62AXX-XX-XXXC 62B22 GRAYHILl 87654321 nyogel 774L | |
emitter phototransistor til 31
Abstract: n50a TRANSISTOR c 5521 D03SS23 optocoupler 450
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E90700 0110b 804/VDE 86/HD195S4. 7Z94432 D03SS23 emitter phototransistor til 31 n50a TRANSISTOR c 5521 optocoupler 450 | |
robot circuit diagram free downloadContextual Info: Robotics with the Boe-Bot Student Guide VERSION 3.0 WARRANTY Parallax warrants its products against defects in materials and workmanship for a period of 90 days from receipt of product. If you discover a defect, Parallax will, at its option, repair or replace the merchandise, or refund the |
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Contextual Info: MCT2 J \ _ w O P T O C O U P L E R A This product range is one o f the industrial standards applied in the market. The current transfer ratio, isolation voltage and low saturation voltage comply to the specifications of the main part of the optocoupler market. |
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E90700 0110b 804/VDE 86/HD195 bb53T31 bbS3R31 0035S23 | |
IR phototransistor
Abstract: AD672 INHX8M 009f 30D7 college Z 00103 PIC12C671 PIC12C672 0000004F
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PIC12C671 PIC12C671 0000001E 0000008F DS40160A/8 002-page IR phototransistor AD672 INHX8M 009f 30D7 college Z 00103 PIC12C672 0000004F | |
Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
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vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s | |
4n25
Abstract: 4n35 597-289 4n25 an DIODE 0536 W4N35 4n32
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F14481 2500Vdc 4n25 4n35 597-289 4n25 an DIODE 0536 W4N35 4n32 |