INGAAS EPITAXX APD Search Results

INGAAS EPITAXX APD Result Highlights (4)

Part	ECAD Model	Manufacturer	Description	Download	Buy
NR8360JP-BC-AZ		Renesas Electronics Corporation	φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC
NR8800FS-CB-AZ		Renesas Electronics Corporation	φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications
NR8300FP-CC-AZ		Renesas Electronics Corporation	1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module
NR8800FS-CB-AZ/SH		Renesas Electronics Corporation	φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications

INGAAS EPITAXX APD Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
InGaAs Epitaxx APD Abstract: receiver avalanche 1550 fiber 2.5 EPITAXX erm epitaxx apd 10gb 10 gb APD receiver avalanche photodiode ghz avalanche photodiode DWDM InGaAs apd photodiode 10 gb PIN receiver avalanche photodiode receiver Text: Product Bulletin ERM 578XCX 10 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vee = -5.2V All specifications without connector. Parameter APD Breakdown	Original	PDF	578XCX 578XCX. InGaAs Epitaxx APD receiver avalanche 1550 fiber 2.5 EPITAXX erm epitaxx apd 10gb 10 gb APD receiver avalanche photodiode ghz avalanche photodiode DWDM InGaAs apd photodiode 10 gb PIN receiver avalanche photodiode receiver
InGaAs Epitaxx APD Abstract: Photodiode apd high sensitivity epitaxx apd 10gb avalanche photodiode receiver 578BKX 1550 nm APD optical receivers avalanche photodiode DWDM InGaAs apd photodiode 10 gb APD receiver EPITAXX Text: Product Bulletin ERM 578BKX 10 Gb/s Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +8V All specifications without connector. Parameter APD Breakdown Voltage, Vb	Original	PDF	578BKX InGaAs Epitaxx APD Photodiode apd high sensitivity epitaxx apd 10gb avalanche photodiode receiver 578BKX 1550 nm APD optical receivers avalanche photodiode DWDM InGaAs apd photodiode 10 gb APD receiver EPITAXX
InGaAs Epitaxx APD Abstract: EPITAXX erm EPITAXX erm 577 apd epitaxx EPITAXX InGaAs apd photodiode InGaAs photodiode 100ps 995Mv ERM APD avalanche photodiode receiver Text: Product Bulletin ERM 577 2.5 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vss = -5.2V All specifications without connector. Parameter Measurement Conditions	Original	PDF	1E-10 InGaAs Epitaxx APD EPITAXX erm EPITAXX erm 577 apd epitaxx EPITAXX InGaAs apd photodiode InGaAs photodiode 100ps 995Mv ERM APD avalanche photodiode receiver
InGaAs Epitaxx APD Abstract: InGaAs apd photodiode Photodiode apd high sensitivity InGaas PIN photodiode, 1550 sensitivity APD bias gain avalanche photodiode receiver InGaAs Epitaxx linear APD, applications, bias supply receiver avalanche 1550 fiber 2.5 10 gb APD receiver Text: Product Bulletin ERM 537/547 2.5 Gb/s SONET/SDH Mini-DIL Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω All specifications without connector. Parameter Responsivity APD PIN Dark Current	Original	PDF
InGaAs Epitaxx APD Abstract: avalanche photodiodes InGaas APD detector, 1550 sensitivity epitaxx APD photovoltaic receiver 1550 InGaAs apd photodiode Si apd photodiode 10 gb APD receiver apd 1550 rise time, dark, capacitance EPITAXX erm 577 Text: Erik Jonsson School of Engineering & Computer Science The University of Texas at Dallas OPTICAL DETECTORS AND RECEIVERS Notes prepared for EE 6310 by Professor Cyrus D. Cantrell August–December 2003 c C. D. Cantrell 06/2003 The University of Texas at Dallas	Original	PDF
InGaAs Epitaxx APD Abstract: Photodiode apd high sensitivity InGaas APD photodiode, 1550 sensitivity epitaxx apd 10gb datasheet apd epitaxx LC InGaAs avalanche photodiode ghz InGaAs apd photodiode photodiode Avalanche photodiode 40 gb InGaAs 1550 photodiode transimpedance amplifier Text: Product Bulletin ERM 578DKX 10 Gb/s High Sensitivity Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +5.7V All specifications without connector. Parameter	Original	PDF	578DKX InGaAs Epitaxx APD Photodiode apd high sensitivity InGaas APD photodiode, 1550 sensitivity epitaxx apd 10gb datasheet apd epitaxx LC InGaAs avalanche photodiode ghz InGaAs apd photodiode photodiode Avalanche photodiode 40 gb InGaAs 1550 photodiode transimpedance amplifier
ETX 40 Abstract: InGaAs Epitaxx APD epitaxx ETX1000T epitaxx APD INGAAS avalanche EPITAXX InGaAs Epitaxx APD ETX ingaas apd photodetector Text: IDE D \| 33b04Dfc. ODQQDSfl 5 EPITAXX INC HIGH SPEED InGaAs PIN PHOTODETECTORS Part Number ETX60B ETX 75 CER-H ETX 75T . ETX100TL ETX 300T •' ETX 75 FJ/FC T - Dark Size Capacitance i/umj Current nA . fpF) 0.1 . . 60 . 0.3 ~ •• ; 75 . • ' Vi , 0.1 •'	OCR Scan	PDF	33b04Dfc. ETX60B ETX100TL O-46lens 10OTL 300TL ETX500T 1000T 2000T5 3000T5 ETX 40 InGaAs Epitaxx APD epitaxx ETX1000T epitaxx APD INGAAS avalanche EPITAXX InGaAs Epitaxx APD ETX ingaas apd photodetector
EPITAXX Abstract: Ir photodiodes ETX75FJ-SLR 0491 ETX75FC InGaAs Epitaxx Text: 54E D EPITAXX INC „ 90-24A tF Release Date: îMMEDïATE Contact: Karen Kinsman • 33bG4Q a QODGiab ? ■ EPX Press Release EPITAXX ANNOUNCES AVAILABILITY OF LOW BACK REFLECTION PHOTODIODES FOR ANALOG VIDEO AND INSTRUMENTATION -x ~ ‘~ EPITAXX offers a modified version of its standard	OCR Scan	PDF	ETX75FJ-SLR. 0-24A 75FC-SLR 75FJ-SLR EPITAXX Ir photodiodes ETX75FJ-SLR 0491 ETX75FC InGaAs Epitaxx