INGAAS PHOTODIODE OPERATING TEMPERATURE RANG Search Results

PIN photodiode 500 nm

Abstract: GFD1300-550 Photodiode Honeywell DBM 01 ACTIVE LOAD PHOTODIODE photodiode esd sensitivity pin Photodiode 1300 nm
Contextual Info: GFD1300-550 1300 nm InGaAs PIN Photodiode FEATURES • InGaAs planar PIN photodiode giving a minimum responsivity of 6 mV/µW at a 1300 nm wavelength • Typical bandwidth of 100 MHZ • Operating temperature-10¡C to +65¡C Opho_225.tif DESCRIPTION The GFD1300-550 is an InGaAs photodiode with

Contextual Info: 2.5Gbps InGaAs PIN Photodiode Module 2.5Gbps InGaAs PIN Photodiode Module Features • • • • • • High Responsivity High speed, typical 2.5GHz Low dark current, typical 0.1nA Low capacitance, typical 0.7pF Operating temperature range -40°C to 85°C

Contextual Info: InGaAs PIN Photodiode Module InGaAs PIN Photodiode Module Features • High Responsivity • High speed, typical 2 GHz • Low dark current, < 1nA • Low capacitance, typical 0.7pF • Operating temperature range -40°C to 85°C • Hermetically sealed TO-18 package in pigtailed or

Contextual Info: 1.5 GHz InGaAs PIN Photodiode Module InGaAs PIN Photodiode Module Features • • • • • • High Responsivity High speed, typical 1.5 GHz Low dark current, < 1nA Low capacitance, typical 0.7pF Operating temperature range -40°C to 85°C Hermetically sealed TO-18 package in pigtailed or

PIN Photodiode 1550nm

Abstract: PIN photodiode 1310 1310nm photodiode 1550nm photodiode 3,8 Ghz PIN photodiode responsivity 1550nm 2,5 GHz InGaAs Photodiode 1550nm
Contextual Info: InGaAs PIN Photodiode Modules R-11-300-X-XXX-XX Features • InGaAs/InP PIN Photodiode • High responsivity at 1310nm and 1550nm • Low dark current • Fast pulse response • -40~85ºC operating temperature • Hermetically sealed 3-pin metal case Packaging

pin Photodiode 1300 nm

Abstract: PIN photodiode 500 nm photodiode esd sensitivity GFD1300-550 pin photodiode InGaAs sensitivity InGaas PIN photodiode Photodiode photodiode amplifier PIN photodiode 300 nm photodiode PIN 1300
Contextual Info: 02 February 1998 GFD1300-550 1300 nm InGaAs PIN Photodiode FEATURES • InGaAs planar PIN photodiode giving a minimum responsivity of 6 mV/µW at a 1300 nm wavelength • Typical bandwidth of 100 MHZ • Operating temperature-10¡C to +65¡C Opho_225.tif DESCRIPTION

InGaAs Photodiode 1550nm

Abstract: photodiode eyes response Luminent photodiode
Contextual Info: InGaAs PIN Photodiode Modules R-11-055-P/R-xxx Features • InGaAs/InP PIN Photodiode • Sensitive receiver at 1310 nm and 1550nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case

laser diode 3pin

Abstract: pin photodiode 10 ghz PIN Photodiode 1550nm photodiode eyes response InGaAs Photodiode 1550nm
Contextual Info: InGaAs PIN Photodiode Modules PDR-C3-AXSTAN-XX Features • InGaAs/InP PIN Photodiode • High responsivity at 1310nm and 1550nm • Low dark current • Fast pulse response • -40 to +85ºC operating temperature • Hermetically sealed 3-pin metal case • ST receptacle package

InGaas PIN photodiode, 1550

Abstract: InGaAs photodiode 1310 1550 PIN Photodiode 4 Ghz 1550 nm PHOTODIODE PD 20
Contextual Info: InGaAs PIN Photodiode Modules R-11-300-R/R-xxx Features • InGaAs/InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case

Contextual Info: Large Area InGaAs PIN Photodiode Module Large Area InGaAs PIN Photodiode Module Features • High Responsivity • Low dark current, typ. <1nA • Operating temperature range -40°C to 85°C • Hermetically sealed TO-18 package in pigtailed or receptacle housing with FC, ST, SC, LC, MU or SMA

Contextual Info: G FD1300-550 1300 nm InGaAs PIN Photodiode FEATURES • InGaAs planar PIN photodiode giving a minimum responsivity of 6 mV/pW at a 1300 nm wavelength • Typical bandwidth of 100 MHZ • Operating temperature-10°C to +65°C OUTLINE DIMENSIONS in inches mm

InGaAs Photodiode 1550nm

Abstract: R-11-075X-X-XXX-X-XX
Contextual Info: InGaAs PIN Photodiode Modules R-11-075X-X-XXX-X-XX Features • InGaAs/InP PIN Photodiode • High responsivity at 1310nm and 1550nm • Low dark current • Fast pulse response • -40 to +85ºC operating temperature • Hermetically sealed 3-pin metal case

InGaAs Photodiode 1550nm

Contextual Info: InGaAs PIN Photodiode Modules R-11-055-X-XXX-X-XX Features • InGaAs/InP PIN Photodiode • Sensitive receiver at 1310nm and 1550nm • Low dark current • Fast pulse response • -40~85ºC operating temperature • Hermetically sealed 3-pin metal case Packaging

InGaas PIN photodiode

Abstract: InGaAs Photodiode 1550nm R-11-075B-R-SFC
Contextual Info: P/N: R-11-075X-X-XXX-X-XX InGaAs PIN Photodiode Modules Features z z z z z z InGaAs/InP PIN Photodiode High responsivity at 1310m and 1550nm Low dark current Fast pulse response -40~85°C operating temperature Hermetically sealed 3-pin metal case Packaging

R-11-075-P-M

Abstract: R-11-075-P-MFC R-11-075-P-MSC R-11-075-P-MST R-11-075-P-S R-11-075-P-SFC R-11-075-P-SST R-11-075-R-SFC R-11-075-R-SSC R-11-075-R-SST
Contextual Info: InGaAs PIN Photodiode Modules R-11-075-R/P-xxx Features • InGaAs/InP PIN Photodiode • High responsivity at 1310 nm and 1550nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • FC/ST/SC receptacle package

1500-nm

Contextual Info: SFH 2224 TERNARY PIN PHOTODIODE MM FIBER PIGTAIL Preliminary Data Sheet FEATURES Maximum Ratings * InGaAs/lnP PIN Photodiode Operating and Storage Temperature Range TOP, Tst(j .-4 0 ° to +B5°C Soldering Temperature (2 mm from case bottom), (Ts) I m^ I O s .260°C

Contextual Info: InGaAs PIN Photodiode R-11-XXX-G-A B Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 40, 55, 75,100 or 300 µm

Contextual Info: InGaAs PIN Photodiode R-11-XXX-G-B B Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 40, 55, 75,100 or 300 µm

Photodiode 1310

Abstract: InGaAs photodiode TO-46 R-11-055-G-B R-11-075-G-BB R-11-100-G-B R-11-300-G-B 10 gb laser photodiode TO46 package R1105
Contextual Info: InGaAs PIN Photodiode R-11-xxx-G-B B Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 55, 75,100 or 300 µm

R-11-075-R-SSC

Abstract: R-11-075-P-SSC R-11-075-P-SFC R-11-075-P-MFC R-11-075-P-MST R-11-075-P-S R-11-075-P-SST R-11-075-R-SFC R-11-075-R-SST InGaAs photodiode 1310 1550
Contextual Info: InGaAs PIN Photodiode Modules R-11-075-R-SFC/ SC/ ST • R-11-075-P-SFC/ SC/ ST Features • InGaAs/ InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to +85ºC operating temperature • Hermetically sealed 3-pin metal case

LIGHT LASER DIODE SAMSUNG

Abstract: Pmon18
Contextual Info: 1 Technical Data Sheet June 2002 FIBEROPTICS DIVISION TR114LA 155Mbps 1310nm LC Duplex Single Mode Transceiver Features 1.3µm InGaAsP MQW Fabry-Perot laser Highly sensitive InGaAs PIN photodiode Operating temperature range Extended Temperature : -45~85 oC

Contextual Info: 1 Technical Data Sheet June 2002 FIBEROPTICS DIVISION TR133LA 622Mbps 1310nm LC Duplex Single Mode Transceiver Features 1.3µm InGaAsP MQW Fabry-Perot laser Highly sensitive InGaAs PIN photodiode Operating temperature range Extended Temperature : -45~85 oC.

samsung emi* filter

Abstract: transmitter receiver circuit diagram
Contextual Info: 1 Technical Data Sheet June 2002 FIBEROPTICS DIVISION TR134LA 622Mbps 1310nm LC Duplex Single Mode Transceiver Features 1.3µm InGaAsP MQW Fabry-Perot laser Highly sensitive InGaAs PIN photodiode Operating temperature range Extended Temperature : -45~85 oC.

Contextual Info: InGaAs PIN Photodiode R-11-XXX-G-B B -C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 40, 55, 75,100 or 300 µm