INGAAS PIN PHOTODIODE WAVELENGTH .6 TO 1.7 Search Results
INGAAS PIN PHOTODIODE WAVELENGTH .6 TO 1.7 Result Highlights (4)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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OPT101P-JG4 |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 |
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OPT301M |
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Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 |
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OPT101P-J |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 |
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OPT101P |
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Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 |
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INGAAS PIN PHOTODIODE WAVELENGTH .6 TO 1.7 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: InGaAs PIN photodiodes G10899 series Wide spectral response range 0.5 to 1.7 m The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 m to 1.7 m. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 m to 1.7 m, the G10899 series has sensitivity extending |
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G10899 G10899-003K G10899-005K G1089: SE-171 KIRD1109E02 | |
G10899-003K
Abstract: G10899 InGaAs PIN photodiode Wavelength .6 to 1.7
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G10899 G10899-003K G10899-005K G10899: SE-171 KIRD1109E02 G10899-003K InGaAs PIN photodiode Wavelength .6 to 1.7 | |
InGaAs PIN photodiode Wavelength .6 to 1.7Contextual Info: InGaAs PIN photodiodes G10899 series Wide spectral response range 0.5 to 1.7 m The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending |
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G10899 SE-171 KIRD1109E01 InGaAs PIN photodiode Wavelength .6 to 1.7 | |
Contextual Info: InGaAs PIN photodiodes G10899 series Wide spectral response range 0.5 to 1.7 m The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending |
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G10899 SE-171 KIRD1109E01 | |
K1190
Abstract: KIRD1116E01 InGaAs InGaAs PIN photodiode Long Wavelength 2.6
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K11908-010K KIRD1116E01 K1190 InGaAs InGaAs PIN photodiode Long Wavelength 2.6 | |
InGaAs pinContextual Info: Two-color detector K11908-010K Two InGaAs PIN PD with different spectral response are arranged one above the other to cover a broad wavelength range The K11908-010K incorporates an InGaAs PIN photodiode cutoff wavelength: λc=1.7 m mounted over a long wavelength |
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K11908-010K K11908-010K KIRD1116E01 InGaAs pin | |
InGaAs pinContextual Info: Two-color detector K11908-010K Two InGaAs PIN PD with different spectral response are arranged one above the other to cover a broad wavelength range The K11908-010K incorporates an InGaAs PIN photodiode cutoff wavelength: λc=1.7 m mounted over a long wavelength |
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K11908-010K K11908-010K KIRD1116E01 InGaAs pin | |
InGaAs photodiode array chip
Abstract: charge amplifier array G11135 Image Sensors G11135-512DE
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G11135 SE-171 KMIR1018E06 InGaAs photodiode array chip charge amplifier array Image Sensors G11135-512DE | |
Infrared detectors
Abstract: dark detector application ,uses and working
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Selection guideContextual Info: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high |
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KIRD0005E02 Selection guide | |
Contextual Info: InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors |
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G11135-256DD, G11135-512DE G11135 KMIR1018E09 | |
photodiode linear array 256Contextual Info: InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors |
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G11135-256DD, G11135-512DE G11135 KMIR1018E10 photodiode linear array 256 | |
Contextual Info: InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors |
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G11135-256DD, G11135-512DE G11135 operatio53 B1201, KMIR1018E11 | |
Contextual Info: InGaAs linear image sensors G9203-256D G9204-512D Near infrared 0.9 to 1.7 m image sensors The G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with |
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G9203-256D G9204-512D G9203-256D G9204-512D G9203-256D: G9204-512D: KMIR1013E03 | |
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InGaAs photodiode
Abstract: Photodiode Array linear focal plane array J18M PHOTODIODE current voltage amplifier array 16 Photodiode-Array linear array photodiode element photo diode array photo diode array amplifier photodiode linear array
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50sec 500ii J18M-28P 3030b05 GDDD334 InGaAs photodiode Photodiode Array linear focal plane array J18M PHOTODIODE current voltage amplifier array 16 Photodiode-Array linear array photodiode element photo diode array photo diode array amplifier photodiode linear array | |
G7233-256
Abstract: G7230-256 S7233 Hamamatsu photodiode 256 elements InGaAs photodiode array chip InGaAs PIN photodiode Long Wavelength 2.6 phct C7221 G7230-128 G7231-128
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G7230/G7231 /G7233 G7233 G7231/G7233 i49i06162-3750. 44i0181-367-3560 S-164 46I08-750-5895 KMIR1006E03 G7233-256 G7230-256 S7233 Hamamatsu photodiode 256 elements InGaAs photodiode array chip InGaAs PIN photodiode Long Wavelength 2.6 phct C7221 G7230-128 G7231-128 | |
Contextual Info: Two-color detectors K1713-05/-08/-09 Wide spectral response range from UV to IR The K1713 series incorporates an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. Features Applications Wide spectral response range |
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K1713-05/-08/-09 K1713 K1713-05 K1713-08 K1713-09 B1201, KIRD1040E04 | |
transistor C4159Contextual Info: InGaAs Linear Image Sensors NIR applications 0.9 to 1.7 ¡im/1.2 to 2.6 pm The InGaAs linear image sensors are self-scanning photodiode arrays designed specifically for detectors in near infrared multichannel spectroscopy. They incorporate an InGaAs photodiode array chip, a |
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G6891, G6893 P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, transistor C4159 | |
Light Detector laser
Abstract: short distance measurement ir infrared diode
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KOTH0001E15 Light Detector laser short distance measurement ir infrared diode | |
Contextual Info: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis. |
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G12430 G12430-016D G12430-032D G12430-046D 40-pin 48-pin 18-pin KIRD1124E01 | |
Contextual Info: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis. |
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G12430 G12430-016D G12430-032D G12430-046D 40-pin 48-pin 18-pin KIRD1124E02 | |
Photodiode Array 32 elementContextual Info: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low |
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G9203-256D, G9204-512D G9203-256D G9204-512D G9203-256D: G9204-512D: SE-171 KMIR1013E01 Photodiode Array 32 element | |
Photodiode Array 32 elementContextual Info: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low |
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G9203-256D, G9204-512D G9203-256D G9204-512D G9203-256D: G9204-512D: SE-171 KMIR1013E02 Photodiode Array 32 element | |
G9204
Abstract: G9203-256D G9204-512D
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G9203-256D, G9204-512D G9203-256D G9204-512D G9203-256D: SE-171 KMIR1013E02 G9204 |