INGAAS QUADRANT Search Results

InGaas PIN photodiode, 1550 NEP

Abstract: quad photodiode psd quadrant photodiode InGaas PIN photodiode, 1550 sensitivity photodiode 850nm nep UDT Sensors Photodiode, 1550nm NEP InGaas PIN photodiode chip quad photodiode PIN photodiode 850nm
Contextual Info: InGaAs Quad Detectors 4 Quadrant Detectors for NIR Wavelengths The UDT InGaAs Quad series of Photodetectors allow position measurements of wavelengths from 850nm to 1700nm. The 4 Quadrant devices made of InGaAs come in 1mmφ InGaAs-1000-4 and 3mmφ (InGaAs-3000-4) sizes. They exhibit an excellent combination of High

Selection guide

Contextual Info: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high

InGaAs quadrant

Abstract: C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A
Contextual Info: Photodiodes for High-Performance Applications PIN Photo- PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced diodes For Industrial Applications InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced Applications • Telecom

EPITAXX

Abstract: ETX505Q epitaxx quadrant InGaAs Epitaxx ETX 40 EPITAXX 40
Contextual Info: EPITAXX INC 54E D m 33b0M0b 0D00GÔ3 4 Ï EPITAXX ETX1Q5D, ETX505Q T '-m-m Dual and Quadrant Position Sensing InGaAs Photodiodes Description: EPITAXX ETX 105D and ETX 505Q are InGaAs bi-cell and quadrant photodiodes. They are sensitive in the near infrared spectrum and are characterized by low noise and long

epitaxx

Contextual Info: E P 1 T A X X INC 24E D • 33b040b □□□□□63 4 ■ lEPnMo^^^^^^ETjnosaETgow T-m-m Dual and Quadrant Position Sensing InGaAs Photodiodes Description: EPITAXX ETX 105D and ETX 505Q are InGaAs bi-cell and quadrant photodiodes. They are sensitive in the near infrared spectrum and are characterized by low noise and long

InGaAs quadrant

Contextual Info: InGaAs PIN photodiodes G6849 series Quadrant type Features Applications Photosensitive area G6849 : φ2 mm quadrant element G6849-01: φ1 mm quadrant element Light spot position detection Measurement equipment Low noise High reliability Structure Parameter

Contextual Info: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings

G6849-01

Abstract: quadrant photodiode G6849 AK 1012
Contextual Info: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings

quadrant photodiode

Abstract: G6849 G6849-01
Contextual Info: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings

G6849

Abstract: G6849-01 quadrant photodiode
Contextual Info: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings

AW100

Contextual Info: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings

Contextual Info: H A M A M A T S U PRELIMINARY DATA Oct. 1997 InGaAs PIN PHOTODIODE G6849 Quadrant type FEATURES • Active area: <j>2 m m /4 elements • Low noise • High reliability APPLICATIONS • Position detection of spot light • Measurement equipment •GENERAL RATINGS

ingaas LED

Abstract: EPITAXX ETX1000T InGaAs quadrant large area quadrant photodiode satellite l300 T05 Package ETX25B InGaAs Epitaxx ETX505Q
Contextual Info: EPITAXX INC 5QE D • 33b04Qb OGQOlBb T H E P X 7^//^// Telecommunications: The Local Loop EPITAXX has been a pioneer in developing packaging which supports high volume production while reducing component costs. EPITAXX receptacled photodiodes, laser diodes, and LEDs offer high reliability,

EPITAXX

Abstract: ETX505Q large area quadrant photodiode ETX100TL-ST ingaas LED epitaxx quadrant ETX1000T InGaAs Epitaxx linear T05 Package ETX300
Contextual Info: EPITAXX INC EHE D 33bG40b QGGGQbB =1 r -^ - o i Telecommunications: The Local Loop EPITAXX has been a pioneer in developing packaging which supports high volume production while reducing component costs. EPITAXX receptacled photodiodes, laser diodes, and LEDs offer high reliability,

epitaxx

Abstract: InGaAs Epitaxx linear ETX1300RST ETX1300FC
Contextual Info: EP I T A X X INC 50E D • 33b040b DGGGIBb T H E P X 7=VAy/ Telecommunications: The Local Loop E P IT A X X has been a p io n eer in developing packaging w hich supports high volum e production while reducing com ponent costs. E P IT A X X receptacled photodiodes, laser diodes, a n d L E D s offer high reliability,

Selection guide

Abstract: Infrared detectors P13243-011MA
Contextual Info: Selection guide - March 2015 Infrared Detectors Covering a broad spectral range in the infrared region INFRARED DETECTORS HAMAMATSU PHOTONICS K.K. Infrared detectors Infrared detectors are widely used in diverse field including measurement, analysis, indust r y, c o m m u n i c a t i o n , a g r i c u l tu r e , m e d i c i n e ,

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.

Selection guide

Abstract: United Detector Technology PSD
Contextual Info: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable

Contextual Info: R R series Thermal Emission Microscope IAHEAI New High-sensitivity detector thermal detector InSb Motorized turret with objective lenses • Two objective lenses for analyzing thermal emissions • Three objective lenses for probing and laser scanning Thermal Emission Microscope

PIN-10D

Abstract: PIN-5DI PIN-13DI PIN-10DF PIN-10DI PIN10DI OSD100-0A InGaAs APD quadrant OSD5-5T PIN-44DI
Contextual Info: Photoconductive Series Planar Diffused Silicon Photodiodes The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications,

PIN-125DPL

Abstract: PIN-10DP InGaAs APD quadrant OSD1-5T pin-6dp PIN-10AP PIN-10DPI PIN-13DPI PIN-220DP PIN-25D
Contextual Info: Photovoltaic Series Planar Diffused Silicon Photodiodes The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral

laser range finder schematics

Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
Contextual Info: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

MPPC 001 ci

Abstract: china nobel tv diagram
Contextual Info: NEWS 02 2013 100 90 70 Relative light ou tput % 80 60 50 40 30 20 10 300 400 600 500 h (nm) gt en el av W Cover Story PAGE 2 Hamamatsu Photonics K.K. celebrates 60 years of excellence in Photonics OPTO-SEMICONDUCTOR PRODUCTS PAGE 15 New type of Multi-Pixel Photon