INJECTION LASER DIODE Search Results

Contextual Info: LASER DIODE INC 15E D I 5345=145 OODOHE1! 1 I LCW-10 LASER DIODE. LCW-1 OF r - Ÿ i - 0 5 - 830nm Multi-Mode CW Injection Laser FEATURES ► CW Operation ► Low Threshold Current

laser diode 905nm

Contextual Info: LASER DIODE LC-50S-905D LC-50S-905D is 905nm AIGaAs/GaAS single quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-50S-905D is a CW single mode injection semiconductor laser

1064nm photodiode

Abstract: TO56 package laser diode to56 lcf106410s5n
Contextual Info: LASER DIODE LCF106410S5N LCF106410S5N is 1064nm AIGaAs/GaAS single quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LCF106410S5N is a CW single transverse mode injection

1060 nm GaAs Laser Diode

Abstract: LC100-S
Contextual Info: LASER DIODE LC-100S-1060D LC-100S-1060D is AIGaAs/GaAS MQW structure fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-100S-1060D is a CW single mode injection semiconductor laser with built-in monitor photodiode to

Contextual Info: LASER DIODE LC-30S-750C LC-30S-750C is 750nm AIGaAs/GaAS MQW structure fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-30S-750C is a CW single mode injection semiconductor laser with built-in monitor photodiode to

Contextual Info: LASER DIODE LC-50S-850C LC-50S-850C is 850nm AIGaAs/GaAS single quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-50S-850C is a CW single transverse mode injection semiconductor laser with built-in monitor

injection laser diode

Abstract: laser diode 905nm
Contextual Info: LASER DIODE LC-10S-905D LC-10S-905D is 905nm AIGaAs/GaAS single quantum well structure fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-10S-905D light source is a CW single mode injection semiconductor laser with built-in monitor

SM 850nm laser

Contextual Info: LASER DIODE LC850D6S-N/P LC850D6S-N/P is 850nm AIGaAs/GaAS MQW fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC850D6S-N/P is a CW single mode injection semiconductor

DVD laser head

Abstract: "dvd pickup"
Contextual Info: LASER DIODE LC-50S-660C/D-60X LC-50S-660C/D-60X is 660nm AlGaInP quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-50S-660C/D-60X is a CW single mode injection

Contextual Info: E G & G/CANADA/OPTOELEK itc /i 10 ]> tiectrouptics and Devices 3030bl0 0D00GSD MT1 H C A N A Laser Developmental Type Low Threshold CW-Operated Gallium Aluminum Arsenide Injection Laser • Typical Threshold Current — 75 mA ■ Continuous or Pulsed Operation at Room Temperature

2N3818

Abstract: laser rca 2l688 C86000E rca laser eg and g laser diode RCA Solid State S20 rca OP-12 laser diode module 820 nm
Contextual Info: G & G/CANADA/OPTOELEK IG ì> 3030blQ GDGDDSG 4T1 • CAN A Laser t ie c t r o u p t ic s i t c j i and Devices Developmental Type Low Threshold CW-Operated Gallium Aluminum Arsenide Injection Laser ■ Typical Threshold Current — 75 mA ■ Continuous or Pulsed Operation at Room Temperature

dc powersupply

Abstract: transistor mesfet
Contextual Info: A T & T MELEC I C 5SE D • QDSDD2b DQDSS3D 1 ■ ^^9 Preliminary Data Sheet T -5 2 -/ 3 -0 7 LG1095A Laser Driver DESCRIPTION The LG1095A is a gallium-arsenide (GaAs) integrated circuit that provides an output current suitable tor modulating a laser diode in lightwave applications. The output pulse magnitude is controlled by direct current injection in the output stage current

transistor D889

Abstract: D889 LG1095A ds89
Contextual Info: A T & T MELEC I C 5SE D • QDSDD2b DQDSS3D 1 ■ A T fiT Preliminary Data Sheet T -52-13-01 LG1095A Laser Driver DESCRIPTION The LG1095A is a gallium-arsenide (GaAs) integrated circuit that provides an output current suitable tor modulating a laser diode in lightwave applications. The output pulse magnitude is controlled by direct current injection in the output stage current

optical input to rca 5.1 output circuit

Abstract: rca ca3130 CA3130 peak detector GB41P2 fenwal ca3130 equivalent CLASS II LASER laser rca melcor PULSED LASER DIODE DRIVER
Contextual Info: E G & G/CANADA/OPTOELEK I f n • IDE D ■ 3030L.10 □□□0031 R Hi CANA i l fp11^state 7"" Solid State Emitters Electro Optics ■ * ■- r Developmental Type r C86046E 820 nm CW-Operated GaAIAs Injection Laser With Integral Optical Feedback Photodiode

EYP-TPA-0780-01000-3006-CMT03-0000

Abstract: dbr laser
Contextual Info: Versiom 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0780-01000-3006-CMT03-0000 General Product Information Product Application 780 nm Tapered Amplifier

injection laser diode

Abstract: TAPERED
Contextual Info: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0735-00500-3006-CMT03-0000 General Product Information Product Application 735 nm Tapered Amplifier

"Laser Measurement"

Contextual Info: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0765-01500-3006-CMT03-0000 General Product Information Product Application 765 nm Tapered Amplifier

Contextual Info: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0915-01500-3006-CMT03-0000 General Product Information Product Application 915 nm Tapered Amplifier

1060 nm GaAs Laser Diode

Abstract: 1060 nm semiconductor laser injection laser diode
Contextual Info: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-1060-00500-3006-CMT03-0000 General Product Information Product Application 1060 nm Tapered Amplifier

EYP-TPA-0795

Abstract: EYP-TPA-0795-00500-3006-CMT03-0000 0795 795nm laser diode lifetime
Contextual Info: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0795-00500-3006-CMT03-0000 General Product Information Product Application 795 nm Tapered Amplifier

semiconductor laser

Contextual Info: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0980-00500-3006-CMT03-0000 General Product Information Product Application 980 nm Tapered Amplifier

injection laser diode

Abstract: EYP-TPA-0830-01000-4006-CMT04-0000 830nm
Contextual Info: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0830-01000-4006-CMT04-0000 General Product Information Product Application 830 nm Tapered Amplifier

EYP-TPA-0850-00500-3006-CMT03-0000

Abstract: 840 nm GaAs
Contextual Info: DATA SHEET EYP-TPA-0850-00500-3006-CMT03-0000 Version 0.90 2009-06-24 page 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL BAL General Product Information Product Application 850 nm Tapered Amplifier Spectroscopy C-Mount Package

LG1095AXA

Contextual Info: A T & T MELEC ESE D I C • 0 0 5 0 02b 000SS2M h ■ I j l AT& T Preliminary Data Sheet T - 5 Z - 1 3 -0 1 L G 1 0 9 5 A X A L a s e r D r iv e r DESCRIPTION The LG1095AXA is a gallium-arsenide (GaAs) integrated circuit used to modulate a laser diode in Gb/s lightwave applications.