INP HEMT POWER AMPLIFIER Search Results

70GHz HEMT Amplifier

Abstract: inp hemt power amplifier vamp InP transistor HEMT
Contextual Info: NS 2P N221 1 Oct. 2004 CI0401 Preliminary 43 Gb/s Data Limiting Amplifier Features Data bit rate : DC - 43 Gb/s Saturated output voltage amplitude : 0.9Vpp Small signal gain : 20dB General Description The CI0401 is an ultra-fast InP HEMT Limiting Amplifier operating at rates up to 43

inp hemt power amplifier

Abstract: NS 2P N218 94GHz 100ghz MMIC POWER AMPLIFIER hemt 94GHz amplifier CI0402 N218
Contextual Info: NS 2P N218 CI0402 17 Aug. 2004 Preliminary 78 GHz – 100 GHz High - Power Amplifier Features Wideband operation: 78 GHz – 100 GHz Pout = 17 dBm typ, Pin = 5 dBm P(-1dB) = 11 dBm (typ) Linear Gain: 14 – 23 dB Linear Gain Control Range: 10 dB WR-10 Waveguide Interface

inp hemt power amplifier

Abstract: 100ghz MMIC POWER AMPLIFIER hemt 94GHz
Contextual Info: EL07-292-601-008 CI0621 May 2007 Preliminary 88 GHz – 105 GHz High - Power Amplifier Features Wideband operation: 88 GHz – 105 GHz Pout = 18 dBm typ, Pin = 5 dBm P(-1dB) = 12 dBm (typ) Linear Gain: 17 – 20 dB Linear Gain Control Range: 8 dB WR-10 Waveguide Interface

SBB-3089Z

Abstract: SBB3089
Contextual Info: SBB3089Z SBB3089Z 50MHz to 6000MHz InGaP HBT Active Bias Gain Block 50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK Package: SOT-89 Product Description Features RFMD’s SBB3089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active

Contextual Info: Design & Manufacturing Excellence Military & Space Solutions Custom Integrated Circuits • Semiconductor device to system level knowledge • Validated device models • Extensive library of proven Analog, Digital & Mixed-Signal ICs and MMICs • Specialty products include: Synthesizers,

InP transistor HEMT

Abstract: Class E amplifier GaN amplifier inp hemt power amplifier pHEMT transistor visitor Gan hemt transistor varian NONLINEAR MODEL LDMOS
Contextual Info: 2130 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 42, NO. 10, OCTOBER 2007 A GaN HEMT Class F Amplifier at 2 GHz With 80% PAE David Schmelzer, Student Member, IEEE, and Stephen I. Long, Senior Member, IEEE Abstract—A Class F amplifier has been designed, fabricated, and

GaAs HEMTs X band

Abstract: X-band Gan Hemt 0.18um AlGaN/GaN HEMTs x-band mmic lna alcon X-band diode gp 421 LNA x-band
Contextual Info: High Linearity, Robust, AlGaN-GaN HEMTs for LNA & Receiver ICs P. Parikh, Y. Wu, M. Moore, P. Chavarkar, U. Mishra, Cree Lighting Company, 340 Storke Road, Goleta, CA 93117. R. Neidhard, L. Kehias, T. Jenkins, Air Force Research Laboratory, Sensors Directorate, WPAFB, OH 45433.

SFT-9100

Abstract: InP transistor HEMT sft 43 Sft9100 SFT-9200B 9200B InP HEMT transistor at 50ghz inp hemt low noise amplifier InP HBT transistor mesfet low noise
Contextual Info: SFT-9200B SFT-9200B 50GHz Transimpedance Amplifier 50GHZ TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9200B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE

N220

Contextual Info: NS 2P N220 CI0403 31 Aug. 2004 Preliminary 30 GHz Clock Distributor Features Wideband operation: 5 GHz – 30 GHz Single-ended clock input 2 differential outputs Output Amplitude: 0.9 Vpp Typ. General Description The CI0403 is an ultra-fast 1:2 Clock Distributor operating at rates up to 30 GHz. The

60GHz transistor

Abstract: SFT-9400B InP transistor HEMT 60Ghz SFT9400B OC-768 98T2 InP HBT transistor low noise
Contextual Info: SFT-9400B SFT-9400B 60GHz Differential Input Transimpedance Amplifier 60GHz DIFFERENTIAL INPUT TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9400B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE

Contextual Info: SBF5089Z SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal

RFVC1800

Abstract: RFVC-1800
Contextual Info: RFVC1800 RFVC1800 WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz Package: 4 mm x 4 mm x 1.1 mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5 V supply for circuit bias and 0 to +13 V Vtune for frequency control. The

Contextual Info: R0605300 R0605300 Low Current 5MHz to 65 MHz Si REVERSE HYBRID Package: SOT-115J Product Description Features The R0605300 is a hybrid reverse amplifier. The part employs silicon die. It has extremely low distortion and superior return loss performance. The

Contextual Info: R0605250 R0605250 5MHz to 65MHz Si Reverse Hybrid 5MHz to 65MHz Si REVERSE HYBRID Package: SOT-115J Product Description Features The R0605250 is a hybrid reverse amplifier. The part employs silicon die. It has extremely low distortion and superior return loss performance. The

InP transistor HEMT

Abstract: Gan on silicon transistor AlGaN/GaN HEMTs GaN TRANSISTOR MMIC POWER AMPLIFIER hemt Fermi level inp hemt power amplifier
Contextual Info: TECHNOLOGY T RANSISTORS High-power GaN HEMTs battle for vacuum-tube territory US NAVY The vacuum tubes used in today’s millimeter-wave transmitters face an increasing threat from GaN HEMTs. Cree’s Yifeng Wu and Primit Parikh are leading the GaN charge with designs that

RFVC1800

Abstract: RFVC-1800
Contextual Info: RFVC1800 RFVC1800 Preliminary WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz Package: 4 mm x 4 mm x 1.1 mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5 V supply for circuit bias and 0 to +13 V Vtune for frequency control. The

reverse hybrid

Contextual Info: R0605250 R0605250 5MHz to 65MHz Si Reverse Hybrid 5MHz to 65MHz Si REVERSE HYBRID Package: SOT-115J Product Description Features The R0605250 is a hybrid reverse amplifier. The part employs silicon die. It has extremely low distortion and superior return loss performance. The

RFVC1800

Abstract: RFVC-1800 DS100112
Contextual Info: RFVC1800 RFVC1800 WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz Package: 4 mm x 4 mm x 1.1 mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5 V supply for circuit bias and 0 to +13 V Vtune for frequency control. The

Contextual Info: R0605300 R0605300 Low Current 5MHz to 65 MHz Si REVERSE HYBRID Package: SOT-115J Product Description Features The R0605300 is a hybrid reverse amplifier. The part employs silicon die. It has extremely low distortion and superior return loss performance. The

DIN45004B

Abstract: R2005300L
Contextual Info: R2005300L R2005300L Low Current 5MHz to 200MHz Si REVERSE HYBRID (LOW CURRENT) Package: SOT-115J Product Description Features The R2005300L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance.

BF5Z

Abstract: SBF-5089 hemt Ee marking ee hemt SBF 5089 SBF5089 SBF-5089Z SBF50 sbf5089z marking code 827 sot89
Contextual Info: SBF-5089 Z SBF-5089(Z) DC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF-5089(Z) is a high performance InGaP/GaAs Heterojunction Bipolar

Contextual Info: SBF-5089 Z SBF-5089(Z) DC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SBF-5089(Z) is a high performance InGaP/GaAs Heterojunction Bipolar

SUF-8533SR

Abstract: pHEMT operating junction temperature DS110718
Contextual Info: SUF-8533 SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier

SUF-5033

Abstract: suf 5033
Contextual Info: SUF-5033 SUF-5033Low Noise, High Gain SiGe HBT 0.1 GHZ TO 4.0 GHZ, CASCADABLE PHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features The SUF-5033 is a monolithically matched broadband high IP3 gain block covering 0.1 GHz to 4.0 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5 V supply. It