INTERNATIONAL RECTIFIER 721 Search Results

Contextual Info: PD 9.1409 International S Rectifier IRFP048N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V ^DS on = Id = 0.016Q 62A Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: INTERNATIONAL RECTIFIER LSE D • 4 3 5 5 4 5 2 □ D l t Z a 1} 137 ■ INR Bulletin E2798 International l ü Rectifier IRFK3D250,IRFK3F250 Isolated Base Power H EX-pak Assembly - Half Bridge Configuration • • • • High Current Capability. U L recognised E78996.

Contextual Info: Data Sheet No. PD-9.486C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM140 2N-721S JANTXSN7S18 JANTXV2N7218 N-CHANNEL [REF: MIL-S-19SOO/596] 100 Volt, 0.077 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

IRGKI120F06

Contextual Info: International I ®]Rectifier PD-9.966C IRGKI120F06 "CHOPPER" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all "tail” losses

A5 DIODE

Contextual Info: ECOsine high power passive harmonic filter modules for system integration FN 3410 / FN 3412 Cost-effective open panel design for system integration Approvals Optimized for motor drives with 6-pulse diode rectifier front-end Help to comply with international power quality

CD 1517

Abstract: IRFIBC20G BY I.R 600V IRFIBC20G
Contextual Info: PD-9.850 International S Rectifier IRFIBC20G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist - 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V dss - 600V ^DS on - 4 -4 ^ lD = 1.7A

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

Contextual Info: International IOR Rectifier Data Sheet No. PD-6.030C IR2113 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 600V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20 V

Contextual Info: HEXFET Power M O S FE T • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance MÔ554S2 GG1SS3Ô 303 • INR PD-9.850 IRFIBC20G INTERNATIONAL RECTIFIER bSE D

ARS25

Abstract: 6r600 6R050 6R100 6R1000 6R200 6R400 6R800
Contextual Info: -T -o f-n =1000370 MTE D INTERNATIONAL SEMICOND 0Q000Ö2 721 « I S E N 6R 050 In te rn a tio n a l S em icon d uctor, In c . th ru 6R1000 HIGH CURRENT PLASTIC SILICON RECTIFIER VOLTAGE: 50 to 1000 Volts CURRENT: 6 Amperes FEATURES: Plastic m aterial used carries Underwriters

IRFIBC44LC

Abstract: MOSFET IRF 3710 transistor IRFZ46N irf2807 equivalent IRFIBC44 TO-220 IRF 3615 irfz46n irf 3215 mosfet irf 9740 transistor equivalent irf510
Contextual Info: SWITCH RELIABILITY REPORT QUARTERLY REPORT NUMBER 57 OCTOBER 15, 1999 International Rectifier WORLD HEADQUARTERS: 233 KANSAS ST., EL SEGUNDO, CA 90245 USA • Tel: 310 322-3332 • TELEX 66-4464 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, UK • Tel: (44) 0883 714234 • TELEX 95219

Contextual Info: Bulletin 12092/B International S Rectifier s d 553C.ssol s e r ie s FAST RECOVERY DIODES Hockey Puk Version Features • High pow er FAST recovery diode series ■ 6.0 ps recovery tim e ■ High voltage ratings up to 4500V 560A ■ High current ca p a bility

smd M21

Abstract: M21 SMD SMD H21 91543 7224u JANTX2N
Contextual Info: International IOR Rectifier Government and Spa.ce Products •d Part Number Bvo$s V R0S{on) IQ Tr=25°C Pd T (A) I00°C @ T r = 25°C (W) (A) Fax on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs S M D -] N-Channel IR F N 0 4 4 60

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

d lt 7210

Contextual Info: Bulletin 12092 rev. B 10/94 International IÖ R Rectifier SD553C.S50L SERIES FAST RECOVERY DIODES Hockey Puk Version Features • High p o w e r F A S T re c o v e ry d io d e s e rie s ■ 6.0 |is re c o v e ry tim e ■ H igh v o lta g e ra tin g s up to 4 5 0 0 V

Contextual Info: Provisional D atasheet No. P D -9.1711 International IOR Rectifier R E P E T IT IV E A V A L A N C H E A N D dv/dt R A T E D IRHG7214 IRHG8214 HEXFET TRANSISTOR N -C H A N N E L MEGA RAD HARD 250Volt, 2.25Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD HARD te c h n o lo g y

90216

Contextual Info: Document Number: 90216 www.vishay.com 719 Document Number: 90216 www.vishay.com 720 Document Number: 90216 www.vishay.com 721 Document Number: 90216 www.vishay.com 722 Document Number: 90216 www.vishay.com 723 Document Number: 90216 www.vishay.com 724 Legal Disclaimer Notice

Contextual Info: IOR 4ass4sa Goicmi a • T-oi-as IN T E R N A T IO N A L R E C T IF IE R 199 R77R SERIES 500Q-4400 VOLTS RANGE 2 9 5 0 A MP A V G H O C K E Y P U K DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS I PART I NUH6SR i 1 X * Î X ! R77B5M 1 j ! i • I 1 S

ICE3B0365J

Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)

irf7803

Abstract: 470uf 16V tantalum marcon 470uf MAX1637 2.2uH POWER INDUCTOR c25 rectifier international rectifier 639 tokin 988 10BQ040 EC20QS03L
Contextual Info: MAX1637 Evaluation Kit The MAX1637 EV kit has excellent dynamic response to correct for fast output transients. This EV kit is a fully assembled and tested circuit board. Ordering Information PART TEMP. RANGE MAX1637EVKIT 0°C to +70°C _Features

ixys MDD 26 - 14

Abstract: MDD 500-22N1 MDO 220-14N1 ixys MDD 172 12 DIODE 22-35 L M5 DIODE 22-35 L ixys MDD 26 14 MDD 500-12N1 ixys MDD 172 16 IXYS MCC 310
Contextual Info: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 1 MDA 72 D8 - 11 36 l l l l l MDD 26 D8 - 2 64 l l l l l MDD 44 D8 - 5 l l l l l MDD 56 D8 - 8 l l l l l MDD 72 D8 - 11 120 l l l l l l l

MDD 500-22N1

Abstract: ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1
Contextual Info: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 4 1999 IXYS All rights reserved MDD 26 D6-2 ● ● ● ● ● MDD 44 D6-5 95 ● ● ● ● ● MDD 56 D6-8 ● ● ● ● ●

IXYS DSA 1-16D

Abstract: DIODE DSA 1-16D DO-205ACDO-30 pwm INVERTER welder diode avalanche DSA VRRM 2300 1718a 110-12F IXYS DSA DSI 35-08A 117 L DS35Q
Contextual Info: Discrete Rectifier and Avalanche Diodes Contents 1 2 3 Type Page 1800 1600 1400 A VRRM/VDRM V 800 IF(AV)M 1200 Package style 1 2.3 ● ● DS 1 ● ● DSA 1 D5 - 2 2 3.6 ● ● ● DS 2 ● ● DSA 2 D5 - 3 3 2x11 4 ● ● ● ● 5 ● ● ● DS 9 ● ● DSA 9

2.2uH POWER INDUCTOR

Abstract: 10BQ040 MAX1636 MAX1636CPUEVKIT MBRS130LT3 STPS2L25U MAX4332
Contextual Info: 19-1268; Rev 2; 12/00 MAX1636 CPU Supply Evaluation Kit _Features ♦ +7V to +22V Input Voltage Range ♦ Digitally Adjustable 1.25V to 2V Output Voltage ♦ 7A Output Current Capability ♦ ±1% DC Output Accuracy ♦ Efficiency = 87%, VIN = 7V, VOUT = 1.7V