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    INTRINSIC SAFE CIRCUIT Search Results

    INTRINSIC SAFE CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SCL3400-D01-004
    		Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    SCC433T-K03-PCB
    		Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C
    		Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    SCC433T-K03-10
    		Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004
    		Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd

    INTRINSIC SAFE CIRCUIT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Intrinsic Safety Circuit Design Making instruments intrinsically safe need not seem like a nightmare. Here, the basics of intrinsic safety circuit design are discussed. Paul S. Babiarz Intrinsically Safe Apparatus Intrinsically Safe Applications % Switching


    Original     		Z-142 PDF

    inductive proximity sensor transistor schematic

    Abstract: schematic AC inductive proximity sensor INTRINSIC SAFE CIRCUIT SMB30S HP 9714 SMB30MM VOC sensor schematic DC inductive proximity sensor 27030 smicc-330
    Contextual Info: SMI30 Series Intrinsically Safe Sensors Rugged, NEMA 6P-plus sensors in 30 mm threaded PBT barrel housings • • • • • • • Designed for use with approved amplifiers and intrinsically safe barriers in explosive environments SMI30 Series sensors, shown with Intrinsic Safety Kit


    Original     		SMI30 inductive proximity sensor transistor schematic schematic AC inductive proximity sensor INTRINSIC SAFE CIRCUIT SMB30S HP 9714 SMB30MM VOC sensor schematic DC inductive proximity sensor 27030 smicc-330 PDF

    Contextual Info: INTRINSIC SAFETY HAZARDOUS AREA 3 INTRODUCTION Intrinsically safe equipment is defined as “equipment and wiring which is incapable of releasing sufficient electrical or thermal energy under normal or abnormal conditions to cause ignition of a specific hazardous


    Original     		ISA-RP12 K-104 PDF

    Contextual Info: QFET P-CHANNEL FQAF22P10 FEATURES • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ. • Extended Safe Operating Area


    OCR Scan     		FQAF22P10 PDF

    Contextual Info: QFET P-CHANNEL FQA22P10 FEATURES BVDSS = • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ. • Extended Safe Operating Area


    OCR Scan     		FQA22P10 PDF

    EN60079-11

    Abstract: ATEX 2033 EN6007911 EN60079-1
    Contextual Info: CNY65Exi www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, ATEX Certified FEATURES Top view A ± • ATEX certificate: PTB 03 ATEX 2033 U www.vishay.com/doc?85361 C • Suitable for intrinsic safe circuits for gas • Gas safety provision: II (1) G (EX ia) IIC


    Original     		CNY65Exi EN60079-11 0303/DIN 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 ATEX 2033 EN6007911 EN60079-1 PDF

    Contextual Info: QFET N-CHANNEL FQA6N70 FEATURES BVDSS = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 30nC Typ. • Extended Safe Operating Area


    Original     		FQA6N70 PDF

    Contextual Info: QFET N-CHANNEL FQAF34N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area


    Original     		FQAF34N20 PDF

    Contextual Info: QFET N-CHANNEL FQPF6N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 17nC Typ. • Extended Safe Operating Area


    Original     		FQPF6N50 O-220F PDF

    Contextual Info: QFET N-CHANNEL FQPF6N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ. • Extended Safe Operating Area


    Original     		FQPF6N25 O-220F PDF

    Contextual Info: QFET N-CHANNEL FQPF5N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC Typ. • Extended Safe Operating Area


    Original     		FQPF5N20 O-220F PDF

    Contextual Info: QFET N-CHANNEL FQP8N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 14nC Typ. • Extended Safe Operating Area


    Original     		FQP8N25 O-220 PDF

    Contextual Info: QFET N-CHANNEL FQP6N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ. • Extended Safe Operating Area


    Original     		FQP6N25 O-220 PDF

    Contextual Info: QFET N-CHANNEL FQP4N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 10nC Typ. • Extended Safe Operating Area


    Original     		FQP4N50 O-220 PDF

    FQP6N50

    Contextual Info: QFET N-CHANNEL FQP6N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 17nC Typ. • Extended Safe Operating Area


    Original     		FQP6N50 O-220 FQP6N50 PDF

    Contextual Info: QFET N-CHANNEL FQP4N20L FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 7.0nC Typ. • Extended Safe Operating Area


    Original     		FQP4N20L O-220 PDF

    Contextual Info: QFET N-CHANNEL FQA16N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 30nC Typ. • Extended Safe Operating Area


    Original     		FQA16N25 PDF

    Contextual Info: QFET N-CHANNEL FQA85N06 FEATURES BVDSS = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 86nC Typ. • Extended Safe Operating Area


    Original     		FQA85N06 PDF

    FQA34N20

    Contextual Info: QFET N-CHANNEL FQA34N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area


    Original     		FQA34N20 FQA34N20 PDF

    Contextual Info: QFET N-CHANNEL FQAF19N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ. • Extended Safe Operating Area


    Original     		FQAF19N20 PDF

    Contextual Info: QFET N-CHANNEL FQP19N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ. • Extended Safe Operating Area


    Original     		FQP19N20 O-220 PDF

    FQPF7N60

    Contextual Info: QFET N-CHANNEL FQPF7N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ. • Extended Safe Operating Area


    Original     		FQPF7N60 O-220F FQPF7N60 PDF

    Contextual Info: QFET N-CHANNEL FQP16N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 30nC Typ. • Extended Safe Operating Area


    Original     		FQP16N25 O-220 PDF

    FQP11N40

    Contextual Info: QFET N-CHANNEL FQP11N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ. • Extended Safe Operating Area


    Original     		FQP11N40 O-220 FQP11N40 PDF