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    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier PD - 9.1586 IRG4PC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


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    PDF IRG4PC30S O-247AC O-247AC

    Untitled

    Abstract: No abstract text available
    Text: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve


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    PDF IRG4BC30W 0D2flb53

    Untitled

    Abstract: No abstract text available
    Text: P D - 9.1593 International IOR Rectifier IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


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    PDF IRG4BC30S O-22QAB S54S2

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1462A International IOR Rectifier IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


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    PDF IRG4PC30UD O-247AC

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1449A International IOR Rectifier IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


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    PDF IRG4BC20UD T0-220AB S5452

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1448C International IOR Rectifier IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF 1448C IRG4BC20U TQ-220AB 002flb45

    pv0402p

    Abstract: 1002 ringer
    Text: International IOR Rectifier Data Sheet No. 1.036C PV0402P Microelectronic HEXFET POW ER M O SFET PHOTOVOLTAIC RELAY P o w er ic Relay Single Pole, Normally Open + Ring Detector 0-400V, 120mA AC/DC General Description


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    PDF PV0402P 120mA PV0402P RH89BB, 1002 ringer

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1451A International IOR Rectifier IRG4BC30FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .


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    PDF IRG4BC30FD T0-220AB 5SM52

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1677A International IOR Rectifier IRG4BC10UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode


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    PDF IRG4BC10UD O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1471A International IOR Rectifier IRG4PC50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


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    PDF IRG4PC50UD O-247AC 554S5 DDSfl51fl

    DIODE V97

    Abstract: No abstract text available
    Text: International IOR Rectifier PD 9.1571 IRG4RC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode .


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    PDF IRG4RC10UD 140ns DIODE V97

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier PD-9.1585A IRG4PC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ps @ 125°C, VGE = 15V


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    PDF IRG4PC40K O-247AC

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1438A International IOR Rectifier dv/dt RATED HEXFET TRANSISTOR IRHM9064 REPETITIVE AVALANCHE AND P-CHANNEL RAD HARD Product Summary -60 Volt, 0.060£1, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology


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    PDF IRHM9064 4A554S2

    DIODE RECTIFIER BRIDGE SINGLE 55a 600v

    Abstract: IRG4PC50UD ir igbt BH rn transistor
    Text: International Rectifier IOR PD -9.1471A IRG4PC50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


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    PDF IRG4PC50UD O-247AC DIODE RECTIFIER BRIDGE SINGLE 55a 600v IRG4PC50UD ir igbt BH rn transistor

    FA08TA60C

    Abstract: C555
    Text: International Rectifier IOR HEXFRED PD -2.601 HFA08TA60C Ultrafast, Soft Recovery Diode Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.8V


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    PDF HFA08TA60C FA08TA60C C555

    IRF3205 equivalent

    Abstract: No abstract text available
    Text: PD - 9.1374A International IOR Rectifier IRFI3205 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated


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    PDF IRFI3205 0D2454T IRF3205 equivalent

    irfp3710

    Abstract: RFPE30
    Text: PD - 9.1490A International IOR Rectifier IRFP3710 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = "100V ^ D S o n = 0.025Î2


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    PDF IRFP3710 O-247 irfp3710 RFPE30

    I628

    Abstract: No abstract text available
    Text: International IOR Rectifier IN S U LA TE D GATE pd-9.i628 IRG4PC30W PRELIMINARY BIPOLAR TR AN SISTO R Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve


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    PDF IRG4PC30W I628

    IRLZ44N equivalent

    Abstract: MARKING CODE 2B5
    Text: PD -9.1498 International IOR Rectifier IRLIZ44N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated


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    PDF IRLIZ44N O-220 IRLZ44N equivalent MARKING CODE 2B5

    IRL3705N

    Abstract: No abstract text available
    Text: P D - 9.1502 International IOR Rectifier IRL3705NS PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Surface Mount • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


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    PDF IRL3705NS package039) IRL3705N

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier PD - 9 .1 5 9 3 IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


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    PDF IRG4BC30S O-220AB

    Untitled

    Abstract: No abstract text available
    Text: I , .• I International PD 9.1402 PRELIMINARY IOR Rectifier IRFR/U5305 HEXFET Power MOSFET • • • • • • Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated


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    PDF IRFR/U5305 IRFR5305) IRFU5305) 4B55452 QQ243b2

    Untitled

    Abstract: No abstract text available
    Text: P D - 9.1586 International IOR Rectifier 4 30 S IRG PC PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


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    PDF O-247AC

    rectifier d 355 n 2000

    Abstract: transistor iqr
    Text: International IOR Rectifier PD - 9.1592 IRG4BC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >50 kHz , and Short Circuit Rated to 10ps @ 125°C, VGe = 15V


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    PDF IRG4BC40K O-247AC rectifier d 355 n 2000 transistor iqr