IP 80 C 154 Search Results

NG WH 115

Contextual Info: ^6 ' Preliminary Specifications REV.C2 M itsubishi m icrocom puters M1 6 C /80 1 00-pin Version group Specifications in this manual are tentative and subject to change. 6 SIN G LE -C H IP 16-BIT CM OS M ICRO C O M PUTER Description Description The M16C/80 (100-pin version) group of single-chip microcomputers are built using the high-performance

Contextual Info: a High Output Current Amplifiers w/ Power Down Preliminary Technical Data_ AD8016 FEATURES □ □ Vinnl J ne C ne E ne C L Vinn2 nc A D 80 1 6A R P nc nc PWDN0 PWDN1 C -V1 Vout2 CM CL Vinpl GND C Low Power O peratio n 1.5W T otal pow er d is s ip a tio n ru n nin g full rate

TRANSISTOR 3GW

Abstract: p120 2d motor ECE switch EDG 132 kv gis 600F1 710 svp 180 16 am dm hte nv DM 0365 R FARL BP interfacing of external RAM and ROM simultaneously
Contextual Info: ^,0 ' ^ ^ 0<? Prelim inary Specifications R E V .A 3 Specifications in this manual are tentative and subject to change. Description M itsubishi m icrocom puters M16C/80 1 4 4 - p i n V G fS io n g r o u p S IN G LE -C H IP 16-BIT C M O S m i c r o c o m p u t e r

BS.A.201572 001

Abstract: U0901 BS.A.201572 201572.001 GS-22-008 UL-94V0
Contextual Info: r BS , C GEN. S T . , 2 0 2 7 8 8 , 154- IN T . ST. 02 01 10 03 04 05 06 07 08 OD 50 60 70 80 REV. 90 11 12 13 14 18 20 31 32 33 34 38 39 40 42 43 44 45 46 48 56 70 72 73 75 76 81 82 83 84 8£ DATE D E S C R IP T IO N BY A 14-09-01 CONVERSION REVISION 00 KN

Telefunken

Abstract: RE154
Contextual Info: Negative Giltervorfpannung von — 5 bis — 14 Voll je nach Anodenipannung erforderlich. C hatakteriflik d er P<3hre RE 504 F o d e n ip a n n u n g . 3.5 V H e iz ilro m v e rb ra u d i. 0,50 A A n o d e n lp a n n u n g . 80-220 V

Contextual Info: TOSHIBA THM Y7216F0EG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 1 6 ,7 7 7 ,2 1 6 -W O R D B Y 72-BIT SY N C H R O N O U S D R A M M O D U L E D ESC R IP T IO N The THMY7216F0EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By 2 P U B L IC A T IO N R IG H TS R E V IS IO N S RESERVED. - LTR F2 D E S C R IP T IO N RE VISED HOUSING BUSHING - “ 7 .80 MECHANICAL: RECOMMENDED TORQUE: 20 IN-LB.

H-9 MHz

Contextual Info: M a n A M P ,c o m p a n y Hybrid Junction 2 MHz - 2 GHz H -9 V2.00 Features C-21 • • 0 ° - 1 80° H ybrid w 3h 10 0 ctave Bandw iith 30 dB M in in um ]so ]a tb n • Low VSW R • In p e d a n c e : 50 O hm s N om . • I ip u t P o w e r : 2-20 MH z: 5 W . Ma x .

wire ul 3135

Abstract: UL 3135 2-1437658
Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . REUEASED FO R AUU C O P Y R IG H T By 2 P U B U IC A T IO N R IG H TS REVISIO N S RESERVED. - LTR K4 D E S C R IP T IO N RE VISED .80 PER D ATE ECO-11-004587 MAR11 T .77 r 1 MECHANICAL: RECOMMENDED TORQUE: 20 IN-LB

Contextual Info: ComAnt Communications Antennas FREQUENCY INDEPENDENT DATA Impedance: Gain: Polarization: Connector: VSWR: Radome: directional yagi 135-145 MHz, 144-156 MHz, 154-166 MHz, 163-177 MHz, 380-410 MHz, 405-440 MHz, 440-475 MHz, 830-890 MHz, 865-925 MHz, 890-960 MHz

Contextual Info: ComAnt Communications Antennas Description: Frequency: Impedance: Gain: Polarization: Connector: VSWR: Radome: Radiator: Attachment: Lightning protection: Temperature: IP: offset pattern dipole 135-145 MHz, 144-156 MHz, 154-166 MHz, 163-177 MHz, 380-410 MHz, 405-440 MHz,

41Bf

Contextual Info: HL1541A/AC/B F/DL/DM InGaAsP LD Description T he H L 1541 A /A C /B F /D L /D M are 1.55 pm band laser diodes. Features Package Type • HL1541 A: A1 • T he H L 1541 A /A C are packaged in chip carrier type m iniature packages, and are appropriate for incorporating in m odules.

Contextual Info: ComAnt Communications Antennas Description: Frequency: L Impedance: Gain: Polarization: Connector: VSWR: Radome: Radiator: Attachment: Lightning protection: Temperature: IP: omnidirectional ground plane 135-145 MHz, 144-156 MHz, 154-166 MHz, 163-177 MHz,

Contextual Info: N AMER P H IL IP S /D IS C R E T E b 'lE ]> fe.bSB'm DOBOblO 154 * A P X Product Specification Philips Semiconductors BUK453-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

OD-880FHT

Contextual Info: HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880FHT ANODE CASE .015 • Extended operating temperature range .209 .212 • No internal coatings • No derating or heat sink required to 80°C .183 .186 .152 .154 .100 .041 .017 .030

OD-880FHT

Contextual Info: HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME .183 .186 ANODE CASE .015 .152 .154 • Extended operating temperature range • No internal coatings .209 .220 • No derating or heat sink required to 80°C .100 .041 .017 .030 .040 .197

Contextual Info: HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880FHT ANODE CASE • Extended operating temperature range .209 .212 .015 • No internal coatings • No derating or heat sink required to 80°C .183 .186 .152 .154 .100 .041 .017 .030

Contextual Info: HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES 1.00 MIN. .183 .186 .015 .152 .154 • Extended operating temperature range • No internal coatings .209 .220 • No derating or heat sink required to 80°C .100 .041 All surfaces are gold plated. Dimensions are nominal

Contextual Info: HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880FHT • Extended operating temperature range ANODE CASE .209 .220 .015 • No internal coatings • No derating or heat sink required to 80°C .152 .154 All surfaces are gold plated. Dimensions are nominal

Contextual Info: HI-REL RAD HARD IR EMITTERS OD-800F FEATURES 1.00 MIN. ANODE CASE GLASS DOME • Designed for high radiation tolerance .209 .212 .015 • Excellent power degradation characteristics • High power output .183 .186 • Fast response .152 .154 .100 • Hermetically sealed metal package

OD-880FJ

Contextual Info: HI-REL GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880FJ ANODE CASE .015 • High reliability LPE GaAlAs IRLEDs .209 .220 • High power output • 880nm peak emission .183 .186 .152 .154 • Hermetically sealed TO-46 package .100 • MIL-S-19500 screening available

OD-800F

Contextual Info: HI-REL RAD HARD IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-800F ANODE CASE • Designed for high radiation tolerance .209 .212 .015 • Excellent power degradation characteristics • High power output .183 .186 • Fast response .152 .154 .100 • Hermetically sealed metal package

OD-880FJ

Contextual Info: HI-REL GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880FJ ANODE CASE • High reliability LPE GaAlAs IRLEDs .209 .212 .015 • High power output • 880nm peak emission .183 .186 • Hermetically sealed TO-46 package .152 .154 .100 • MIL-S-19500 screening available

OD-880F

Abstract: ODD-45W
Contextual Info: HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME .183 .186 ANODE CASE .015 .152 .154 OD-880F FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output